Course Description
The instructor discusses the applied aspects of plasma-assisted etching from a general point of view. The emphasis is on mechanistic understanding. The etching of Si and its compounds is covered in detail. The chemistries used in the etching of other technology-related materials such as Al, organics, and III-V compounds are summarized. Other topics presented include selectivity, loading, ARDE and feature scale problems, damage, and issues associated with high-density plasma RIE. A section on plasma diagnostics and ion-beam based etching methods is briefly discussed.
Learning Objectives
- Understand the fundamentals of dry etching and the basic concepts of plasma etching
- Understand the physics of rf glow discharges (both high and low density)
- Understand the surface science aspects of RIE including the role of energetic ions
- Recognize the factors which influence etching anisotropy
- Define the steps of plasma-surface chemistry leading to etching
Topics Covered
- Fluorocarbon plasma etching of Si and its compounds
- Selectivity, loading effects, and aspect ratio dependent etching
- Uniformity of etching, damage, feature charging issues, and particles
- Etching of other materials (Al, organics, III-V compounds, etc)
- Plasma diagnostics such as optical emission spectroscopy with actinometry, mass spectrometry and laser-induced fluorescence
- Issues in high density plasma etching, wall effects, and ion beam-based methods
- Deep Reactive Ion Etching (DRIE)
- Applications and processing etching using ALE
- End point detection
Who Should Attend
This course is intended for scientists, technicians and others working with or interested in the dry etching of materials in reactive gas glow discharges, particularly those who do not have extensive experience in the field.
Instructor
Richard Beaudry
PT International, LLC
Testimonials
See what previous course participants had to say about this training!
- "Instructors' Process and Hardware knowledge were impressive."
- "I finally gained a clear understanding of the RIE process."
- "The instructor had a very good knowledge of the content."
- "I had a great time to learn fundamental concepts of plasma etching course from SEMI."
Important Information
Note that only the person who registered will receive a certificate of completion. This virtual training will not be recorded. Attendees must be present to access course knowledge.
Can't find the training link day of? After you register, you will receive the link to the live training via the email address you provided. In addition, you will receive email reminders about 24 hours in an advance and an hour before with the same link. Please keep these emails on hand to access the trainings on time. If you do not see any confirmation emails, please check your junk/spam folders before contacting SEMI U for support.
United States
- SEMI UThis course discusses the fundamentals of plasma assisted phenomena and reactive ion etching (RIE) processes. The emphasis is on the physical and chemical processes that determine the consequences of a reactive gas plasma/surface interaction. The role of energetic ions as encountered in RIE systems is discussed in detail and the factors which influence anisotropy of etching are highlighted. Plasma-assisted etching equipment is described including capacitively coupled, inductively coupled and wave-generated plasmas sources.
Pricing
- Members: $845
- Non-Members: $945
* For group orders with 10+ attendees, and for Students/Veterans discounted pricing, please contact [email protected].
