The rapid electrification of automotive and industrial systems is placing increasingly stringent demands on power semiconductor devices in terms of voltage capability, thermal performance, reliability, and system integration. This presentation reviews recent trends in power devices and power module packaging technologies aimed at improving performance while addressing cost and manufacturability constraints.
First, the fundamental differences between digital and power devices are outlined, followed by an overview of power device applications based on silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies, together with Amkor’s product portfolio.
Next, power module packaging technologies are discussed with a focus on key electrical and thermal challenges. Representative solutions, including advanced interconnects, cooling architectures, and embedded power modules, are introduced, along with a brief overview of Amkor’s technology roadmap.
Finally, the role of the Amkor Technology Japan R&D Center in supporting open innovation and global collaboration is briefly discussed.

Co-packaged optics (CPO) is emerging as a key enabler for scaling bandwidth while containing power and cost in next-generation AI and cloud infrastructure. By moving optical engines closer to the switch ASIC and shortening high-speed electrical reaches, CPO can reduce SerDes power, ease signal-integrity constraints, and increase overall front-panel bandwidth density. However, delivering these benefits at volume requires new approaches across package architecture, manufacturing, and system integration.
This presentation reviews the main packaging challenges that must be solved to industrialize CPO, including thermal management and heat spreading near high-power silicon, fiber attach and optical alignment tolerances, photonics/laser integration choices, high-density optical and electrical I/O, substrate and interposer selection, and reliability risks such as warpage, CTE mismatch, and contamination control. Test and rework strategy, yield learning, and supply-chain readiness (materials, assembly, and metrology) are highlighted as practical barriers to adoption.
The talk also outlines opportunities created by CPO packaging innovations—such as modular optical tiles, standardized fiber interfaces, advanced lid/heat-sink concepts, and co-design of electrical, mechanical, and optical domains—to unlock higher radix switches and lower system power. Attendees will leave with a structured view of technology tradeoffs, a roadmap of near-term versus long-term packaging options, and actionable considerations for bringing CPO from prototypes to deployable products.

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AI is fueling unprecedented growth and accelerating demand for advanced devices. Its requirements for performance, power, and area scaling are driving memory and logic devices toward 3D architectures.
At the heart of this 3D transformation, processing steps must enable taller, perpendicular structures as well as smaller features. Meeting these requirements calls for new deposition and etch capabilities that did not exist before, leading to breakthroughs needed in areas such as atomic-level deposition and etch (ALD and ALE), high-aspect-ratio processing, dry resist EUV patterning, and the adoption of new materials like molybdenum (Mo). As a result, the transition to 3D devices will drive increased intensity of deposition and etch processing.
This presentation will explore how deposition and etch are critical to unlocking the future of 3D devices, with increasing velocity required to meet the demands of AI-driven innovation.

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As the semiconductor industry navigates the challenges of dimensional and functional scaling in the artificial intelligence (AI) era, advanced materials science has emerged as a critical enabler for performance enhancement. Modern AI-centric architectures demand the integration of increasingly complex system-on-chip (SoC) designs with non-traditional material systems.
This work details a high-throughput methodology for the rapid down-selection and optimization of multi-element thin films, ensuring alignment with both physical and electrical key performance indicators (KPIs). Utilizing combinatorial physical vapor deposition (PVD) in conjunction with unit-cell electrical test vehicles, we systematically screen an expansive elemental compositional space to identify optimal candidates. Advanced machine learning (ML) algorithms are integrated into each phase of the development lifecycle—spanning precursor synthesis, process optimization, and heterogeneous integration—to satisfy the rigorous specifications of emerging device applications. The synergy between integrated materials engineering and AI-driven informatics significantly reduces the temporal gap between material discovery and device-level implementation.

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Chemical and materials research faces increasing demands for data-driven automation and autonomous research systems due to vast exploration spaces and complex decision-making processes. In this talk, we introduce EXAONE Discovery as a Chemical Agentic AI system and present an integrated research framework designed to accelerate scientific discovery.
EXAONE Discovery is an agent-based system that tightly integrates property prediction, molecular generation, synthesis prediction, and literature/data extraction. Based on given research objectives, the system accumulates relevant data, generates candidate molecules using model-driven approaches, evaluates their properties, and derives feasible synthetic routes—automating the end-to-end discovery pipeline. Furthermore, it is designed to enable a closed-loop research paradigm by interfacing with autonomous laboratories, connecting design–prediction–synthesis–validation cycles. This allows hypotheses proposed by AI to be experimentally validated, with results continuously fed back into the system for iterative model improvement and optimization.
In this talk, we will demonstrate how this integrated approach enhances research productivity across various industrial use cases in materials discovery and optimization, and discuss future directions of Chemical Agentic AI.

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The rising technical demands for advanced semiconductor device manufacturing, and the industry’s ambitious net-zero commitments necessitate the development of novel etch chemistries that deliver both technical excellence and environmental sustainability. This talk will present an overview of the emerging etching chemistries developed by Air Liquide for variety-targeted applications. These innovative chemistries focus on delivering improved performance with unique technical merits to address current industry challenges. Exemplified by a novel low Global Warming Potential (GWP) designed for general dielectric etch, its synergistic integration with advanced abatement solutions, and a simplified Life Cycle Analysis (LCA) - from raw material extraction through processing, manufacturing, distribution, and use, this presentation aims to provide insights into a pathway towards more sustainable semiconductor manufacturing processes.

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As device architectures scale toward the angstrom era, metallization has emerged as one of the most critical bottlenecks to continued improvements in power and performance. Shrinking feature dimensions increase resistance, heighten reliability risks, and add complexity in interconnects and contacts. At these scales, traditional approaches which uniformly affect all wafer surfaces are increasingly ineffective. They rely heavily on lithography to define placement, and struggle to address tighter geometries and growing sensitivity to interfaces. Selective deposition is a solution which enables atomicscale control of where metals grow, placing material only where it is needed, without relying on patterning. It also enables monocrystalline metal growth, eliminating grain boundaries to minimize contact resistance.

This presentation will highlight how Applied Materials’ integrated materials solutions are enabling multiple inflections through area selective metallization. Selective Cobalt Capping technology encapsulates copper interconnects, improving adhesion, suppressing electromigration, and extending copper reliability to advanced nodes. Applied’s Selective Barrier eliminates a highly resistive interface at the interface of interconnect wiring. For contact fill, Applied developed Selective Tungsten (W) as a liner-less gap-fill solution that eliminates traditional liner/barrier layers and enables bottomup, seamfree metal fill. Finally, we introduce Selective Molybdenum (Mo) deposition that carries lowresistivity contact scaling forward as dimensions approach the fundamental scaling limits of W. Applied’s state-of-the-art atomic layer deposition tool for molybdenum delivers bottom-up, single-crystal Mo growth, enabling the next generation of contact scaling.

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Cleaning processes originally relied on wet etch based patterning. However, dry etching now performs the majority of the patterning work, so wet etching is no longer needed for most pattern creation steps. Consequently, the focus of cleaning has shifted from patterning to the removal of contaminants. To obtain a clean surface, we must eliminate unwanted contaminants without any side effects such as pattern damage, collapse, material loss, or corrosion.
However, in the current era of 3 D structured devices such as V NAND, GAA, and 3 D DRAM, lateral wet etching is essential for patterning 3 D devices, and the proportion of wet etching in cleaning processes is increasing. Additionally, different kinds of selectivity such as concentration selectivity and area selectivity, have become important, in addition to conventional material selectivity. Sometimes we have to remove a film uniformly even though there are seams and voids. In addition, pattern loading has become a critical factor in lateral removal processes. We must solve these loading issues to achieve better performance and yield.
From time to time we must use more flexible, multi step processes; therefore, premixed chemistry is not enough to meet our purpose. Due to the flexibility of dry (gas phase) cleaning, the portion of dry cleaning has been increasing sharply. Area selectivity has also become another challenge. We must etch without corner rounding or climbing, and we want to perform anisotropic etching.
Conversely, based on the generic clean roadmap, high aspect ratio cleaning and low consumption cleaning will remain continuous challenges. Super critical CO2 drying is a solution for pattern collapse in HAR patterns, yet a dryer that is milder than CO2 but better than conventional IPA dryer technology is still required. In terms of chemical reduction, the puddle process may be a solution, but some side effects related to temperature consistency and cleanliness differences due to fluid dynamics must be resolved before implementation.

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Rapidly evolving progress of AI and HPC has significantly increased computational and memory needs such as higher performance, lower power consumption, and wider memory bandwidth with reduced latency. An end application of AI/HPC comes down to Datacenter construction. Meeting the challenge of delivering this processing power in the datacenter requires systematic innovation from the device to the datacenter level. It starts with integrating highly optimized, domain-specific accelerators which should be integrated into advanced 2.5D and 3.5D packaging that minimize losses and power for high-speed communication while taking advantage of workload power management. AI computing introduces significant challenges for energy consumption and thermal management. Power delivery network is crucial for CPU, GPU and NPU power and performance of which solution can be DTC, IVR, mtal-insulator-metal (MIM) capacitor and thin film inductor, backside power rail, etc..  While Moore’s law has continued to yield transistor scaling necessary for these applications, the ever growing demand from models for AI training and inference pushes Si scaling in conjunction with the advent of advanced interconnects via disaggregation and reaggregation of chips in advanced packaging.  
We will discuss with examples and the challenges of utilizing packaging elements to their full potential and discuss how co-optimization is crucial to achieving the best results for any given set of system requirements and constraints.

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Advanced semiconductor packaging is now central to enabling continued performance scaling as conventional transistor scaling slows. This seminar introduces cutting-edge trends in advanced packaging, including 2.5D and 3D integration, fan-out wafer-level packaging, chiplet-based architectures, and glass interposers for optical I/O in AI and HPC systems. These technologies offer enhanced performance, form factor reduction, and system-level integration capabilities critical for future computing platforms.
Leveraging prior industry experience, this talk highlights real-world applications and challenges in designing and qualifying advanced SoC packages. Examples include CoWoS-based AI chip packaging, hybrid bonding techniques, and thermal design optimization for high-power systems.
As packaging structures become increasingly complex, reliability emerges as a critical bottleneck. The seminar explores major failure mechanisms such as thermal-mechanical fatigue, electromigration, interfacial delamination, and Through Glass Via (TGV) degradation. Reliability analysis methods including FEA-based stress modeling, time-to-failure prediction, and advanced failure diagnostics will be introduced.
By combining packaging innovation with reliability engineering, the talk aims to provide a comprehensive perspective on the technological and practical issues that must be addressed to enable robust, high-performance semiconductor systems in the AI and data-driven era.

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As the AI era progresses, semiconductor devices are increasingly adopting 3D architectures to boost performance and power efficiency. At the same time, system technology co-optimization (STCO) is advancing through the use of chiplets and advanced wafer-level packaging. As the industry integrates more chips into chiplets, the size of interposers continues to grow. However, wafer-level packaging faces limitations in accommodating large interposers due to the constraints of 300mm wafer shapes and temporary carriers.
This trend is driving a shift toward panel-level packaging (PLP) to support higher packaging unit counts. Despite its potential, PLP still faces significant challenges—particularly in terms of process development and process control.
This paper explores the technical trends in panel-level packaging, focusing on the current challenges and potential solutions related to process control.

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Abstract - Heterogenous integration and advanced packaging is behind the technology that is enabling today’s AI and high-performance computing. This is done through complex architecture that utilizes platforms including microbumps, through silicon vias (TSV), high density fanout and hybrid bonding (HB). The integration of chiplets using any combination of these technologies is allowing the industry to extend the Moore’s law and overcome limitations of the Von Neumann architecture. Hybrid bonding is an especially appealing technology that helps improve power and performance (higher I/O density), as well as thermal management. Sub-10 ㎛pitch die-to-wafer (D2W) HB is already in production1) for 3DIC and the industry working on HB technology for High Bandwidth Memory as well2). However, there are continuous challenges for D2W that require new innovation in both processing and metrology & inspection (M&I), and also unique challenges for both logic and memory applications specific to its integration. The presentation will discuss how logic and memory HB technologies are different and what process and M&I technologies are needed to facilitate HVM of the HB technology across different applications. Process challenges including low temperature bonding, die warpage management and dicing will be discussed, while M&I challenges include the transition to e-beam technology for HB enablement.

1) R. Agarwal et al., “3D Packaging for Heterogeneous Integration”, IEEE ECTC, July 2022
2) Lee et al., “A Study on D2W Cu Bonding Technology for HBM Multi-die Stacking”, IEEE ECTC, May 2024

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The ongoing miniaturization and increased integration density in electronic circuit systems, particularly in advanced technologies such as DRAMs for Through-Silicon Via (TSV) and High Bandwidth Memory (HBM), have elevated thermal management to a critical challenge in microelectronic packaging. The functional performance, operational lifespan, and reliability of electronic devices fundamentally depend on efficient thermal dissipation. As power densities escalate, enhancing the thermal conductivity of EMCs has become imperative for effective heat removal from increasingly complex electronic components. Consequently, research efforts focused on developing epoxy resins with superior thermal conductivity and identifying appropriate high-conductivity fillers represent the most viable approaches to addressing thermal management challenges in contemporary microelectronic systems.
Recently, we have successfully developed a high-performance epoxy molding compound (EMC) that solves critical thermal management challenges in advanced microelectronic packaging applications. Not only do these compounds provide extremely safe protection of integrated circuits from moisture, mobile ion contaminants and adverse environmental conditions, including temperature fluctuations, humidity and mechanical stress, but the enhanced thermal and mechanical properties of EMC formulations address the heat dissipation requirements of advanced technologies such as small electronic circuit systems, especially TSV and HBM applications.

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As the era of lateral shrink is coming to a cliff, the need for looking at the remaining axis is uprising - the Z-axis. For DRAM, the introduction of vertical channel is very near, and even the introduction of a full 3D-DRAM is not far away. Fortunately, we have experience of VNAND, which could tell us many things about the difficulties following the 3D stacking structures. Starting from the change in the material we've gone through regarding the conversion of planar to vertical NAND, prospection of the material innovation for 3D-DRAM will be shared. The introduction of materials for the construction of deep holes and lengthy lines will be addressed. Also, needs for innovative sacrificial and auxiliary materials will be presented.

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As DRAM scaling approaches fundamental limits, advanced architectures such as 3D DRAM and 4F² DRAM have emerged as promising solutions. The industry initially anticipated the adoption of these technologies around the 1d to 0a nm nodes; however, they remain in development, with mass production likely postponed until the 0b node. For instance, current 3D DRAM samples feature 8–12 layers, while the target is approximately 90 layers. Recent advancements include 3D DRAM with vertical bit-line architecture, demonstrating improved on-current performance and gate control through 5-layered cell stacks utilizing Si/SiGe sacrificial layers and hybrid bonding. Meanwhile, novel 4F² DRAM transistor structures exhibit enhanced operational margins and mitigate floating body effects through dual-gate designs. Additionally, a 3D stackable DRAM architecture with horizontally stacked transistors has been proposed to address challenges such as gate-induced drain leakage (GIDL) and row hammer effects, supported by both experimental and simulation results. Collectively, these innovations underscore the potential of 3D and 4F² DRAM as next-generation solutions to overcome scaling bottlenecks and meet the growing demand for high-density, low-power memory.

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The development of semiconductor technology can be continuously achieved through the collaboration of materials, processes, devices, and systems, and 3D devices and 3D integration process technologies will be essential in the future. From this perspective, the structural change of semiconductor transistors is expected to evolve from the current Gate-All-Around FET (GAAFET) to a new Complementary FET (CFET) device. This structural change of semiconductor devices requires new materials and process technologies. Various technologies are required, such as Monolithic or Sequential 3D integration, Si/Si or Si/Non-Si substrates, new low-resistivity metals, CMP, Bonding, TSV, and Back-Side Power Network Delivery (BSPDN). In this presentation, we will examine the technological trends from the materials and process perspectives for the development of CFET device technology.

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For the past six decades, hazardous gas hydrides like GeH4, Si2H6, and B2H6 have been essential to the semiconductor industry. Their high reactivity, strong reducing power, and ability to grow high-quality, carbon-free layers have made them vital for applications ranging from Si and SiGe epitaxy to tungsten metallization. In recent years, new applications and integration schemes have emerged, demanding higher-performance hydride sources for low-temperature Chemical Vapor Deposition (CVD) and epitaxy. This increased global demand drives production investments, despite the challenges of handling, facilitating, and logistics constraints such as limited shelf-life, pyrophoricity, and toxicity. In this talk, we will provide an overview of the current gaseous hydrides landscape and its challenges. We will discuss how the gas industry can ensure the semiconductor industry's continued safe access to these critical materials through enhanced stewardship, optimized supply chains, packaging, and manufacturing techniques. Furthermore, we will provide insights into technology trends towards new-generation, extra-low-temperature epitaxy and high dopant sources, and their potential use in future transistor architectures.

Emergence of artificial intelligence (AI) is predicted to drive global chip sales to ~$1 trillion revenue by 2030. This surge of AI-targeted chip demand is driving ever-increasing requirement in compute speed to >109 petaFLOPS. High-bandwidth memory (HBM) architecture is well-suited to fulfill this requirement, currently offering >1TB/s bandwidth. To continue improving HBM performance, materials engineering innovations are required in critical packaging building blocks, such as TSV and Hybrid Bonding. Solutions from equipment manufacturer standpoint were presented, in relation to TSV gapfill, low-temperature (<300˚C) hybrid bonding enablement, and bond strength consideration for higher I/O count in the future. Timely solutions to the dynamic HBM integration challenges should be seen holistically and to this end, active partnerships and collaboration across the ecosystem are encouraged.

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The semiconductor industry continues to advance, propelled by growing demand for AI-driven computing and storage technologies and diverse digital applications. However, this growth is tempered by rising economic uncertainty and escalating trade tensions, particularly due to recent U.S. tariff policies, which threaten to disrupt global supply chains. The semiconductor materials sector faces multifaceted challenges, including increasing rapid technological innovation, geopolitical volatility, large-scale capacity expansions and climate change actions. While the market remains relatively stagnant in 2024 compared to 2023, a rebound is anticipated in 2025–2026, driven by long-term demand for advanced computing and storage solutions. A shifting supplier landscape is emerging, marked by the rise of regional players—notably in China—and consolidation among multinational corporations pursuing economies of scale through mergers and acquisitions. Geopolitical pressures are driving localization and dual sourcing, which raise costs, reduce efficiency, and complicate supply chains. This talk highlights the need for a delicate balance between innovation-driven growth and the escalating operational challenges in the semiconductor materials industry.

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As the commercialization of artificial intelligence (AI) and the advancement of technologies such as high-performance computing (HPC) and deep learning (DL) progress, the need to process large amounts of data quickly has emerged. Traditional DDR and GDDR memory have limited bandwidth, so HBM, which offers higher performance, has been commercialized, driving the development of new technologies.
Compared to traditional memory chips, HBM has increased chip size and higher defectivity vulnerability due to chip stacking processes. This has led to new technical approaches for wafer defectivity control across the entire material ecosystem.
This presentation reviews the latest trends in filtration/purification technologies aimed at minimizing the impact of particles and impurities in this material ecosystem. By examining current HVM devices and next-generation HBM-related technologies, we aim to contribute to wafer defect control.

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As semiconductor manufacturers continue the vertical scaling of 3D memory devices, advanced metrology and process control strategies are becoming increasingly essential for maintaining yield and reliability. The rising aspect ratios (AR > 100) of device features present significant challenges for conformal thin-film deposition via atomic layer deposition (ALD). Ultra-thin dielectric films and multilayer stacks—widely used in 3D memory channel holes—are particularly sensitive to process variations. Even minor deviations in ALD process conditions can result in non-uniform film coverage, defect formation, or electrical performance issues, all of which are difficult to detect and monitor within high-aspect-ratio structures.
To address these challenges, Chipmetrics has developed a novel method based on lateral ultra-high-aspect-ratio test structures (PillarHall®) for ALD process development, monitoring, and tool qualification. In the PillarHall® test wafers, the aspect ratio exceeds 1000, enabling practical and non-destructive measurement of film conformality. The method offers a sensitive and scalable solution for improving ALD process qualification, benchmarking tool performance, and enhancing production stability.
This presentation will highlight recent advancements in PillarHall® technology, with a focus on its application in ALD tool qualification and ALD process window control.

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There have been lots of technical advances in the fileld of semiconductor industry for the last dacades ever since DRAM and NAND were invented and commercialized. Meanwhile, form factor was changed from 8F2 to 6F2 in DRAM, and the concept of 3D stacking was adopted in NAND flash memory. Furthermore, EUV tool has been adopted and are being successfully used to make the fine pattern in logic and DRAM as well. And also, it has been very long since ALD was taken as a new advanced depostion technology to meet the need for excellent conformality. But all these new process technologies couldn’t have been possible without the advances in process materials such as advanced photo resist, precursors, functional chemicals and CMP slurries. Recently, those process materials are beginning to open the new possibilities for the innovation of process integations, resulting in cost reduction and giving an extra performance to the process tools. In this talk, the role, the current issues and future challenges will be discussed focusing on the process materials in semiconductor industry.
Starting from photo resist, thin and etch resistant resist has been cosistantly required to suppress the pattern collapse and wiggling during the patterning process. Since the EUV was adopted in DRAM and Logic, high sensitivity EUV resist is now being intensively explored to obtain low DtS as well as good CD uniformity to make the best use of the enomoursly high-priced EUV tool in a cost effective way. For the sake of that, even metal-containing resist is also being tried for high quality patterning. Additionally, thick KrF resist is also required at 3D NAND flash memory with the increase of ON stack and especially for the new platform to be. And for the future, the new concept of PR based on small sized polymer will be worth trying and dry type developer would be also necessary to keep the pattern stable without collapse or wiggling.
With regard to the wet chemicals and CMP slurries, advanced functional chemicals are getting more and more important rather than convetnional cleaning chemicals that are used after etch and CMP process. W or Mo recess chemical in 3D NAND would be that very case. Those chemicals should assure the good uniformity in terms of recess amount in the vertical direction. Most of all etch and CMP prcesses need post cleaning steps to clean the residue, but during that, some unwanted part of the surroundings is apt unavoidably to be removed deteriorating the device proformance in the end. Therefore, special clean chemical will be also needed to minimize the unwanted film loss as well as residue removal. When it comes to the slurry, the shape of the abbrasive particles consistently has been changing from sharp and pointed to the rounded one by adopting colloidal synthesis to suppress the scratch during CMP. The size of the abrasive particle tends to get smaller but slurry is required to make up the decreased removal rate by properly regulating components within slurry. With the change of material to be polished such as Mo or Carbon, new slurry for those new materials will be a new drive for CMP related materials.
Precursor and some functional gases have been contributing to the quality improvement or deposition modication of functional materials such as high-k materials in DRAM. As always, there should be more technical areas, in which precursor and gas will be able to play an important role in ASD(Areal Selective Deposition) or ALE(Atomic Layer Etching) process.
Since process materials needs to be considered from the operation of FAB line unlike the process tools, it must be managed well from the aspect of consistent quality control and risk management of supply chain and safety. In the past, process material used to play a simple and supporting role in the process and tools as well. But now, it is becoming a time for the process materials to play a more active role in cost reduction and risk management as well as providing technology for semiconductor industry. Especially, new process materials are also required to meet the needs for low carbon emission during the process and safety issues from the using PFAS containg materials that are hazardous to human body. Way of doing work needs to be also changed in a way that R&D activities have to be shifted to the earlier engagement. And plus, the collaboration between device maker and process material supplier shoud be much closer and earlier than before so that the developed materials can be successfully adopted at a targeted process and a tool for it. As the material supply chain has been becoming very unstable since corona pandemic and US-China trade conflict, it needs to be managed with a good predictability and balance as well in order for consistent and stable supply in case of unexpected issues at a supply chain.

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