Materials

Silicon carbide (SiC) has become a cornerstone of next-generation power electronics, driving advancements in electric vehicles, renewable energy, and industrial applications. After several years of rapid capacity expansion, the SiC industry is now entering a new phase focused on optimization, quality, and long-term scalability.This transition reflects a broader realignment across the global semiconductor ecosystem. As new fabs come online and supply chains mature, the industry is prioritizing stability, cost efficiency, and technical excellence over sheer capacity growth. SiC has moved from being a niche technology to a critical enabler of the energy transition, and this maturity demands not only investment in tools and materials, but also in process knowledge, cross-industry standards, and long-term partnerships that can sustain innovation at scale.To understand how this shift is unfolding, SEMI Europe spoke with Dr. Mark Puttock, Senior Director, Technology and Innovation at Entegris. Puttock shared his perspective on the industry’s evolution and how strategic collaboration and process innovation are shaping the next chapter of SiC manufacturing.From Ramp-Up to RefinementThe early growth of SiC manufacturing was driven by surging demand for high-efficiency power devices, particularly in electric vehicles. According to Puttock, that expansion period has given way to a new focus on yield, uniformity, and process control.The industry is entering a stage of maturity where success depends on optimization rather than scale alone. Improving consistency across crystal growth, wafer, and device fabrication is becoming just as important as adding capacity. This refinement phase calls for closer integration between materials science and manufacturing technology to ensure reliability and cost efficiency.A Focus on Process and Materials InnovationAs SiC moves toward high-volume production, challenges related to contamination control, defectivity, and wafer uniformity are taking center stage. Puttock noted that addressing these issues requires collaboration between materials suppliers, equipment manufacturers, and device makers.Efforts across the industry are converging on similar goals: enhancing purity, improving process repeatability, and developing new methods to enable larger wafer formats. Moving from 6-inch to 8-inch SiC wafers, for example, is widely recognized as a key step toward higher throughput and cost efficiency. Puttock emphasized that innovation in materials science and manufacturing technology must go hand in hand to support this scaling trend.Insights from Cross-Industry CollaborationA recent Entegris blog post featuring insights from Volkswagen Group Components and Porsche Consulting explores how SiC adoption is reshaping manufacturing strategies beyond the semiconductor industry. The post also highlights the strategy paper developed by Porsche Consulting in collaboration with Entegris. This joint effort demonstrates the value of aligning semiconductor-grade precision with automotive manufacturing demands. By sharing perspectives across industries, partners can accelerate best-practice adoption and strengthen the overall ecosystem for wide-bandgap technologies.Building a Sustainable FutureSustainability remains an integral part of this optimization phase. SiC devices themselves enable energy efficiency in end applications, but the way they are manufactured is equally important. Optimizing material use, recycling process consumables, and improving chemical delivery efficiency all contribute to a smaller environmental footprint. As production scales, attention to both performance and sustainability will be key to long-term success.Looking ForwardThe transition from expansion to optimization marks a pivotal moment for SiC manufacturing. Industry focus is shifting from building capacity to mastering control, quality, and resource efficiency. Puttock sees the future of SiC as one shaped by deeper digital integration, data-driven process development, and continued collaboration across disciplines. These advancements will help enable more consistent, sustainable, and cost-effective production—laying the foundation for the next generation of high-performance power devices.At the same time, Entegris continues to invest in materials science, contamination control, and advanced process technologies that help its customers overcome the complex challenges of SiC manufacturing. By combining technical expertise with a collaborative approach, the company plays an active role in supporting the industry’s transition toward more efficient and sustainable production.James Lam is Business Development Manager at SEMI Europe.

Atomic layer deposition (ALD) and atomic layer etching (ALE) are transforming the way semiconductors are built—layer by layer, atom by atom. These atomic-scale processes are essential to scaling future transistors, improving memory, and enabling next-generation device architectures.SEMI spoke with Sergei Ivanov, Business Technology Director of Metallics R D and Balaji Kannan, Business Technology Director of Dielectrics R D and from Merck to learn about their latest material innovations. At the company’s Electronics business, materials scientists and process engineers are advancing atomic-scale engineering to address some of the semiconductor industry’s toughest challenges. From novel deposition chemistries to next-generation etch techniques, their work is helping to enable future logic, memory, and specialty devices.Pushing the Boundaries of ALD Precursor ChemistryAtomic Layer Deposition (ALD) remains a cornerstone technology for scaling transistors and enabling new architectures. Materials scientists at Merck are exploring novel precursors that enhance film quality, streamline processes, and expand the operational window for complex structures:One area of focus is next-generation hafnium and zirconium precursors. “These advanced high-k dielectrics offer better thermal stability, improved step coverage, and reduced impurities while achieving higher k-values,” Sergei Ivanov explained. “Such attributes are essential for logic and memory devices that demand reliable dielectric performance with minimal defect density.”Another important development is area selective deposition (ASD). Merck’s small-molecule inhibitor solutions reduce the need for advanced patterning in narrow dimensions and 3D geometries, enabling cost-effective and simpler integration for leading-edge nodes. Their selective co-reactants platform leverages digitalization techniques including multivariate analysis, digital twin technology, and machine learning to accelerate process development for critical ASD applications. This approach facilitated industry-first adoption of ASD in high volume manufacturing and enables an ever-expanding toolbox of OEM processes for ASD of high-k, Ti, Mo, Si and other thin films.Merck is also broadening the scope of ALD chemistries across the periodic table. “As our customers encounter new technical challenges, we continue to expand our R D scope across new elements and ligands. Examples include europium, lanthanum, scandium, and cerium dopants with improved electrical properties, niobium and vanadium precursors for deposition of nitride and oxide films with reduced impurities and improved ALD performance, and high-performance nickel MILC solutions are finding their way out of our labs and into customer roadmaps at an ever-accelerating pace,” said Sergei Ivanov.The company’s role in molybdenum chemistry is another example. Merck is a key producer of molybdenum precursors including MoO2Cl2 with industry-leading quality, density, and container utilization. The company offers MoCl5 with advanced trace impurity control paired with innovative container technology. The company’s next-generation organic metallic molybdenum precursors incorporate novel ligands that contribute to critical gains in device performance.Merck’s work with organosilane precursors is also opening new possibilities. “For gate-all-around (GAA) transistor technology, precursors incorporating novel bonding structures enable highly conformal dielectric films with excellent electrical and physical properties, even in complex 3D geometries. At the same time, organosilane chemistries designed to increase silicon incorporation during deposition are supporting high-growth-rate oxides for gapfill applications, delivering the thick films required with greater throughput,” said Balaji Kannan. “Together, these innovations highlight how tailored precursor design can address both scaling challenges and manufacturability in next-generation devices.” Driving Selective and Sustainable Atomic Layer Etching (ALE)“Precision in etching is as critical as deposition. Our innovations in ALE are designed to provide ultra-selective, low-damage material removal, which is increasingly vital as device geometries become finer and more complex,” Sergei Ivanov shared. One example is metal-free ligand exchange ALE for high-k materials, where Merck’s research into etching HfO₂, ZrO₂, and HfZrO₄ showcases a novel metal-free approach. This technique enables accurate and damage-minimized etching of high-k dielectrics, which is essential for integrating advanced transistors and memory stacks.These advancements address industry-wide concerns regarding pattern fidelity, material selectivity, and plasma-induced damage, ensuring greater process control and extending the lifetimes of devices.Looking AheadMerck’s strategic commitment to semiconductor innovation includes ongoing R D efforts that reflect the vision of its Electronics business: providing material-centric solutions to the industry’s most complex integration and performance challenges. Whether advancing front-end device scaling or developing breakthrough materials for emerging applications, the Electronics business of Merck is committed to shaping the materials roadmap for a more connected, intelligent, and efficient world.James Lam is Business Development Manager at SEMI Europe.

In a world where technological advancements move at lightning speed, the semiconductor industry is facing unprecedented challenges. The demand for smaller, faster, and more energy-efficient devices is growing, and traditional manufacturing processes are being pushed to their limits. Enter Spin-on Dielectrics (SOD), a breakthrough material technology that offers a cost-effective, scalable solution for micro-gap filling and high-performance dielectric films. As the industry evolves, SOD is expected to play a pivotal role in enabling the next generation of chips that power everything from AI to everyday electronics.To learn more, SEMI Europe and Merck KGaA, Darmstadt, Germany, held a joint webinar that focused on semiconductor device process evolution by SOD. The session featured insights from three technology experts in the company, including Dr. Surésh Rajaraman, Executive Vice President and Head of Thin Film Business Unit, along with Atsuko Yamamoto, R D Manager for Spin-On Dielectric, and Go Nakano, Global Marketing Manager for Dielectric Materials.SEMI: What is SOD, and how does it fit within the broader semiconductor manufacturing process?Rajaraman: SOD, Spin on Dielectrics, is a unique class of materials used to deposit thin layers of dielectric films, which act as insulators or other functional films, on semiconductor devices. The fabrication of a semiconductor chip involves thousands of intricate steps that incorporate conductors, semiconductors, and insulators. SOD is a versatile technology that supports device performance and miniaturization by enabling better gap fill and film uniformity, all while offering attractive cost of ownership.SEMI: Why is there so much focus on SOD materials, and how are they evolving to meet future industry demands?Rajaraman: As semiconductor devices become more complex—such as 3D NAND scaling to more than 300 layers and DRAM incorporating pillar capacitors—there’s a growing need for materials that can address challenges like interconnect delays, power consumption, and heat generation while maintaining optimal performance. Traditional dielectric materials are reaching their limits, making Spin-on Dielectrics (SOD) a critical solution. SOD offers advantages like bottom-up and seam-free gap filling, enabling ultra-thin insulating and other functional layers that enhance electrical and thermal efficiency and support next-generation device scaling.The industry is pushing the boundaries of scaling, with increasing aspect ratios and complex structures in Logic, 3D NAND and DRAM. Modern devices now require deposition in features which are not only incredibly narrow but also increasingly deep due to going into the third dimension. This creates new challenges, such as stress buildup and cracking in conventional SOD materials. To overcome this, we are developing enhanced formulations with improved mechanical stability and polymer backbone engineering. These innovations enhance gap-filling properties and resistance to process-induced stress, ensuring SOD remains a key enabler for advanced semiconductor manufacturing.SEMI: What are the current industry trends driving the adoption of SOD?Nakano: SOD is becoming a key technology because of its excellent gap-filling performance. Unlike gas-phase deposition methods like Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD), SOD is a liquid-phase process. This makes it more efficient for high-aspect-ratio structures. It also helps reduce costs while maintaining high-performance dielectric properties.With increasing demand for high-density memory and logic devices, SOD is crucial for applications like DRAM and NAND flash, which require precise dielectric layer formation. In DRAM, we’re witnessing a shift from planar to vertical transistors, and even to monolithic 3D DRAM. These changes require new materials for gate insulators and electrodes, alongside improvements in aspect ratio gap filling.For NAND memory, manufacturers are increasing the number of memory layers, leading to taller memory stacks and deeper trenches. As lateral scaling progresses, narrower and more complex structures demand high-aspect-ratio trench fills to maintain performance and reliability.Logic devices are also evolving, with transistor structures moving from FinFETs to nanosheets and forksheets. This transition enhances performance, but it also introduces challenges in wiring density and electrical properties. The narrower pitch of wiring requires advanced dielectric solutions, like SOD, to enable reliable, high-performance semiconductor architectures.SEMI: With all these recent innovations, what role does Merck KGaA, Darmstadt, Germany play in supporting these advancements, and what does the company offer its customers? Rajaraman: As the semiconductor industry pushes the boundaries of scaling, doing so requires materials that can support increasingly complex structures. We are the only materials company in the industry to possess the full spectrum of process technologies for gap-filling capabilities, including SOD, ALD, CVD, and Flowable CVD. Our strategic acquisition of Versum Materials has expanded our capabilities with organosilicon precursors. Combined with our SOD expertise, it allows us to reengineer material backbones with more material choices and tailored properties to optimize performance in high-aspect-ratio applications.To support this, we’ve expanded our global R D footprint. We now operate in various application labs, enabling close collaboration with customers for material customization and fine-tuning properties to address specific manufacturing challenges. Last year, we inaugurated a new R D center in Korea as part of our commitment to being near our customers and accelerating time-to-market for next-generation semiconductor solutions. As semiconductor roadmaps become more complex, customization and collaboration also become more critical. The key to innovation lies in working closely with our customers, understanding their challenges, refining materials, and optimizing processes together. By fostering this ongoing partnership, we can accelerate technological advancements and ensure that new solutions align seamlessly with evolving industry demands.SEMI: Can you share some technical insights on SOD?Yamamoto: SOD is a key material used in semiconductor manufacturing to create insulating layers with high precision. One of the essential components in SOD is PHPS (Perhydropolysilazane), a polymer composed of silicon, nitrogen, and hydrogen. This material is applied as a liquid solution and transforms into a high-quality silicon oxide film through a series of thermal processes.PHPS is essential because it enables precise gap filling in extremely small structures, helping to improve device reliability. The process involves spin-coating the polymer onto a wafer, followed by pre-baking to remove solvents. Then, it undergoes high temperature curing in an oxygen and steam atmosphere, forming a dense silicon oxide film. This method ensures uniform coverage and cost efficiency compared to traditional dry film deposition techniques.Our Spinfil® product line has evolved over the past two decades, starting with the Spinfil® 400 series and advancing through the Spinfil® 600 to the widely used Spinfil® 800 series. These improvements have enhanced gap-filling capabilities and film uniformity, making them ideal for high-aspect-ratio trench structures. The critical baking process involves spin coating and pre-baking before wafers undergo batch processing in a high-temperature furnace. Controlled temperature and moisture conditions transform Spinfil® into silicon oxide films, optimizing properties such as refractive index, shrinkage, and etching resistance and ensuring reliability in semiconductor applications.SEMI: What are the latest trends in new polymer development for SOD?Yamamoto: Our research focuses on three key areas: enhancing film quality, developing SOD for high-aspect-ratio trench filling, and advancing low-k SOD for semiconductor processes.To improve film quality, we introduced the Neofil®series, an evolution of the Spinfil® 800 series. This innovation reduces film shrinkage, lowers stress, and enhances wet etching rates, making it ideal for next-generation semiconductor nodes.Our latest Neofil® series for high-aspect-ratio trench filling is targeted for traditional dry processes like CVD and ALD, which can often lead to void formation and require multiple deposition-etch steps. Our latest SOD materials address this by improving polymer elasticity, ensuring uniform filling of deep trenches up to 16 microns without cracks, making them suitable for emerging 3D nanostaircase designs.In low-k SOD development, we’re focusing on siloxane-based polymers, which provide excellent trench-filling capabilities while maintaining strong mechanical and electrical properties. Compared to flowable CVD and ALD, SOD offers a more cost-effective and efficient alternative. With continued advancements, we anticipate SOD will become a key material for future semi-damascene processes, enhancing embedding performance and overall device reliability.SEMI ContactSitong He, Communications Manager Email: [email protected]

Integrated photonics offers the semiconductor industry a new way to increase the speed and capability of classical compute functions, as well as enabling quantum computing. The III-V Summit, hosted by SEMI Europe in partnership with Photon Delta at SEMICON Europa, opened with a compelling question: why is a photonics summit taking place in the middle of a semiconductor event? Ajit Manocha, President and CEO of SEMI, highlighted the growing convergence of the semiconductor and photonics industries, stating, “It is my firm belief that a boost to Moore’s Law will come from the III-V world.” Declaring that the rate of growth in integrated photonics is set to pick up substantially, Manocha assured, “I will be your ambassador to make sure that the III-V technologies gain far greater visibility than they have today.”Ajit Manocha, President and CEO, SEMIThe promise of new III-V technologies is generating significant excitement within the semiconductor industry. Abdul Rahim, Ecosystem Manager at PhotonWorld, acknowledged the reality that today’s III-V device industry operates in a limited sphere, stating, “The III-V world is still at the interface of industry and academia. There is one main application for III-V devices – transceivers for data centers.” Abdul Rahim, Ecosystem Manager, PhotonWorld Carlos Lee, Director General of the European Photonics Industry Consortium (EPIC), echoed this message, “Photonics is not so much an industry today; it’s an ecosystem. It lacks the standards, roadmaps, and market data that a full-fledged industry needs – but we are getting there.” Carlos Lee, Director General, European Photonics Industry Consortium (EPIC)However, Rahim pointed to a number of trends that are driving the growth of III-V technology for integrated photonics. One key development is large-scale integration, “over the years, the number of devices in one photonics integrated chip (PIC) has been growing fast, reaching tens of thousands of components on-chip,” Rahim explained. Additionally, the widening frequency range supported by III-V devices is unlocking new applications beyond the telecom sector. Broad Scope of Research into III-V Technology for Integrated PhotonicsResearch into III-V technology spans an impressive range of materials, processes and applications. Nick Singh, CTO at Compound Semiconductor Applications (CSA) Catapult, a government-backed technology incubator, described in detail the most important fields of research that are driving innovation in integrated photonics. “III-V materials are special because they can be engineered,” Singh explained. Highlighting their potential role in advancing quantum computing, Singh added, “The ability to use new materials is crucial to reducing the reliance on algorithmic compensation for errors and non-linearity in hardware.” Nick Singh, CTO, Compound Semiconductor Applications Catapult However, Singh emphasized the need for the photonics industry to address structural challenges that could hinder progress. “Collaboration is crucial to standardize process development kits (PDKs) for photonics device fabrication processes—it’s like the Wild West in PDKs right now,” Singh remarked. “Additionally, the availability of raw materials presents a significant challenge.”The truth of this warning was confirmed by Diane Scott, Vice President of TECHCET, stating, "The US has deemed gallium to be the number one supply chain risk among a list of 50 raw materials, and the European Union (EU) has identified gallium as a critical raw material."Diane Scott, Vice President, TECHCETSuch geopolitical concerns have done little to dampen the intensity of research in III-V technology. One of the powerhouses of integrated photonics research is IBM, and Heike Riel, a Fellow at IBM Research with a special interest in quantum computing, revealed promising avenues that IBM is exploring. “IBM has developed local III-V-on-silicon heteroepitaxy, “Riel explained. “Using a direct growth method, we can grow vertical, lateral, and even 3D structures in III-V, such as stacked GaAs structures.” Riel highlighted the potential applications of this technology in emerging processor designs, including the Artificial Intelligence Unit (AIU) and analog computing devices with in-memory logic. “Here, we can deploy GaAs as a photorefractive material, used as a grating, to perform the same function as conventional electronic non-volatile memory in an analog computer chip,” Riel noted. Heike Riel, IBM Fellow, IBM ResearchAlso at the forefront of photonics integration is Black Semiconductor, a start-up company based in Aachen, Germany, which is developing devices using graphene. Cedric Huyghebaert, CTO of Black Semiconductor, shared the company’s vision, “We want to use electronics to compute, and photonics to transfer data, and bring both functions together on the same chip.” Black Semiconductor’s mission is to become the first foundry to offer integrated graphene technology. “Our ambition is to integrate graphene in line with semiconductor standards using semiconductor tools – avoiding the need for exotic processing technologies,” Huyghebaert explained. “We also aim to demonstrate co-integrated photonics on a 300mm wafer system, regardless of the process node. In doing so, we want to prove that deep technological innovation of this kind is possible in Europe.”Cedric Huyghebaert, CTO, Black Semiconductor GmbH Bringing Integrated Photonics to the MassesAs III-V technology develops to enable a broader range of integrated photonics applications beyond the telecom market, experts are recognizing the need for it to become more accessible if it is to be adopted by a wider range of manufacturers. Joni Mellin, manager of the photonics business line at the X-Fab Group, emphasized, “As an industry, we need to bring electronics design automation (EDA) tools up to a level of capability that matches that of the silicon world, so that you do not need a PhD to do product design – we need to make it accessible to ordinary electronics engineers.” Joni Mellin, BL Manager Photonics, X-FAB GroupAdoption of the technology also requires access to production capacity. Peter Maat, Senior Product Manager at SMART Photonics, an open foundry for indium phosphide (InP) programmable interface controllers (PICs), highlighted the challenges in this area. Maat explained that the availability of the foundry as “not a trivial capability,” because many InP fabs are run by integrated device manufacturers, and are closed to other users. The SMART Photonics business model aims to provide a comprehensive enablement service for fabless manufacturing of PICs. “Our responsibility is to produce stable, manufacturable building blocks that we make available to designers and to provide a platform which enables our circuit building blocks to be combined into an integrated photonics circuit,” Maat said.Peter Maat, Senior Product Manager, SMART Photonics Jayakrishnan Chandrappan, Head of Advanced Packaging Technology at CSA Catapult, also emphasized the importance of access to production capability. “The CSA Catapult has one of the world’s only sub-10micron hybridization facilities for advanced packaging that is open to third-party users,” Chandrappan noted.Jayakrishnan Chandrappan, Head of Technology, Head of Technology - Advanced Packaging, Compound Semiconductor Applications CatapultPromising Future for Integrated PhotonicsAs the summit concluded, the atmosphere was charged with optimism about the future of integrated photonics. The discussions highlighted how III-V materials, combined with advanced packaging, are set to play a pivotal role in shaping next generation technologies. A recurring theme throughout the event was the profound impact III-V materials will have, as they poised to become a corner stone of virtually every emerging technological advancement. SEMI ContactLaith Altimime, President of SEMI EuropeEmail: [email protected]