Soitec

The increasing complexity of IC manufacturing poses a number of challenges including the mask data preparation required to enable technology improvements such as multi-beam (MB) mask writers and extreme ultraviolet (EUV) lithography. Thiago Figueiro, VP of Sales & Marketing of Aselta weighs in.

With the CAGR for switches in cell-phone RF front-end modules running at 9% for the next five years, new players want to get in on the action, and established players want to up the ante. The specialists at Incize help wafer suppliers, foundries and fabless companies maximize switch performance starting at the substrate level. CEO Mostafa Emam explains how.SOI News (SN): Can you tell us about the role Incize plays in the RF-SOI ecosystem? [caption id="attachment_32519" align="alignright" width="140"] Incize CEO Mostafa Emam. (Photo courtesy: Incize)[/caption] Mostafa Emam (ME): Our clients are wafer suppliers, foundries and fabless companies. The services we offer are testing and modeling of substrates, with the vision of what will happen in the value chain. Based on what the customer will do with the substrates, we do testing and modeling to improve the technology and tune their processes. Although the big players have teams devoted to this, we can add a layer of characterization that they have no expertise in. Some of our customers are foundries that have been using bulk silicon, but now see opportunities in RF-SOI. But they’re starting from scratch and we help them to adopt the technology. We help them understand the physics behind the technology so they can migrate from bulk to SOI. We help them develop test structures and evaluate their technology. Then we create models for both fully-depleted and partially-depleted SOI with PD-SOI 130 nm or 60 nm technology dominating the RF front-end module market. We believe RF is an art and you need to see the whole picture. SN: Can you tell us a bit about the history of Incize? ME: The RF-SOI story started in the 1990s. Then came trap-rich RF-SOI wafers from Jean-Pierre Raskin’s team at UC Louvain, industrialized by Soitec. Our lab at UC Louvain became known for our expertise in RF-SOI, and in 2011 we created Incize as a spin-off. [Editor's note: for more background, see this SOI Consortium article about the birth of trap-rich substrates and the company’s founding.] At first our characterization services were very diverse, but by 2014 we focused mostly on RF-SOI because of the big demand. In 2015 we started doing radiation hardness tests for space applications and a new business unit was created. In 2016 we started our modeling and PDK activity, followed the next year by work on GaN on Si. In 2018, we started offering full support to RF-SOI newcomers, who were starting from scratch, usually smaller players in the RF market. It takes about two years to fully train the engineers, support the technology enhancements, design test vehicles, measure them and finally do the modeling and PDK. So some of these players are now fully established in the RF-SOI market and have contracts in place with big customers. SN: In your presentations, you often say there is room for all. What do you mean by that? ME: There is a big market for RF-SOI in the coming years. It can offer the low-power, the low-cost and the high performance. RF-SOI is the only mature technology that combines all of this today. It successfully competes with traditional III-V technology. More foundries want to employ RF-SOI. We show to them that it’s not black magic – you just need to know how it works. [bctt tweet="There is a big market for RF-SOI in the coming years. More foundries want to employ #RFSOI. We show them that it’s not black magic – you just need to know how it works. - Incize CEO Mostafa Emam #5G #semiconductors" username="@soiconsortium"] On our side, we have the knowledge and the infrastructure. Our added value is that we can do advanced tests the customers can’t do. So the foundry says there’s opportunities in switches, we’ll do this and develop it all with optimization for specific Ron and Coff [the figure of merit for RF switches]. The foundry develops an RF switch and aiming at certain performance (RonCoff). We help our customers during this development phase. Once the performance target is reached we start developing a model and a PDK. There is enough demand for RF-SOI, as even entry-level cell phones have SOI chips. Some opt for a fast and low-cost solution. Many target “good enough”, although some target to compete against the big players – it’s a question of their business strategy. And this is where our added value comes in. SN: Can you provide some more insight into how you see the RF market? ME: The Front End Module (FEM) is a fast growing market, with increasing demand in terms of volume and performance. This includes antenna switches, LNAs, tuners, filters, etc. Historically, III-V materials have been used for their high performance and high power handling. However, RF-SOI has become the material of choice, and the biggest driver is integration of the RF switch and LNAs in one chip. It’s not easy to integrate the power amplifiers (PAs) on the same chip (still being on III-V substrates). But as it decreases footprint and cost, there are those who’ll do it. There is no viable competition for SOI – nothing will replace it in the short term. There are other technologies, but they are long term. It’s a stable market with high demand. SN: For those of us who are not RF experts, can you help us understand the technology? ME: The switch is sort of the traffic light of the FEM, receiving and transmitting. The simplest RF switch can be composed of only four transistors. Transistors leak power so you need to determine your Ron Coff performance. [Editor's note: Resistance on vs. Capacitance off, the RF switch figure of merit, is measured in femtoseconds and should be as low as possible. Psemi has a good video explaining it.] When the Coff capacitance is small, the switch is really off. When the On resistance Ron is small, it means low losses, and the switch is turned On. Ron and Coff is a compromise. And as there are many frequency bands and antennas, the FEM becomes very complex. Another issue is power handling, since the switch is the first stage behind the antenna. And finally, there is the question of switch linearity. Trap rich SOI wafers suppress harmonics so you have less distortion originating in the substrate. You have to model this – the designer needs to know. In addition to single tone harmonics you also get intermodulation, where, two or more high power signals at two different frequencies create distortion at other frequencies. The danger is that these parasitic signals can be so close that the filter can’t reject them and the useful signals get distorted. This was a killer for the switch created on the bulk substrate. Trap-rich RF-SOI fixed this. So now 100% of switches are on trap-rich SOI substrates. While it’s still a niche market, there is demand from customers for increasing the number of bands – that’s driving this market. SN: And what happens as we move to 5G? ME: There’s more and more pressure on the specs. It’s an art when anything changes. Moving from 3G to 4G required complete upgrade of the [foundry’s] models. With 4G, the specs are severe and the FEM must be built on trap-rich substrates. But 5G is not well defined, so the RF industry is taking their best shot. What is clear: the performance requirements get more challenging. Once the technology is understood, it can be implemented. But the foundries and the fabless need our help to do it fast and do it well. We create more value working together. SN: How do you see things evolving? ME: The number of foundries today doing switches on RF-SOI is increasing, and this will continue for the next few years. We saw this opportunity and invested in it. Our company is just ten people, and we are self-funded. We are swimming in business, but we have fun. And we’re getting recognition. Any company with CMOS in place could adopt RF-SOI. But it’s a different mindset. We help with the transition. ~ ~ ~Click here to read more feature articles in SOI News.

Let’s celebrate! As of April/May 2020, Advanced Substrate News – or ASN for short, and now aka the SOI Consortium newsletter – has been bringing you news for 15 years. I hope you’ll forgive me if this post has a personal angle, as I have been the Editor-in-Chief since Day 1 back in 2005. One of the things I’ve learned over my career covering technology in general and SOI in particular is that “new” technologies are never really new. They don’t pop out fully formed like Venus Boticelli-style. They take years – decades, even. SOI is no exception. What is exceptional about SOI imho is that the ecosystem – from the substrate providers to the end-product designers – keeps finding new things to do with it. There have always been naysayers – and for a while it took on an quasi-fanatic ferocity. There were those who quipped that SOI was the technology of the future...and always would be. But as it turns out, SOI’s is, has been and will be the right technology at many right moments, and I don’t see any sign of that changing in the years to come. We Need a Newsletter! [caption id="attachment_32012" align="alignright" width="189"] My Design News piece on SOI from June 2000 - it changed my life![/caption] As so much in the SOI story, ASN began with Soitec. I first encountered Soitec when I was working as Contributing Editor in Europe for Semiconductor International in the mid 1990’s. It was a start-up of just a few people that made silicon-on-insulator aka SOI wafers. Most of us at the time had barely a notion of what that was all about, but they had an intriguing story to tell about higher performance and lower power. It so happened a few years later (circa 2000) I was also writing for another publication called Design News – not about chip design, but product design, for folks designing cars and consumer electronics and washing machines and such. I kept hearing a new requirement added to the product-design mantra of faster-smaller-cheaper: lower power. It seemed to me that these SOI wafers could go a long way in solving some of product designers’ challenges. I pitched a story to my editor and it wound up on the cover (those were the days some might remember when trade magazines were on paper…). The big players were IBM for digital (in a current-events aside, DKY that those big iron machines at the US national labs cranking on the solutions for the current pandemic use IBM FinFET-on-SOI chips? Just saying…), Philips (now NXP) for power/analog, and Soitec for wafers – and of course Honeywell for aerospace and the big electronics players in Japan for all sorts of things automotive and ultra-low power. Top management at Soitec read the piece and saw that I “got it”. They brought me on board as a consultant, writing early websites, PR, brochures and such. But also most importantly, they invited me “in” – I sat in on sales reviews and attended the big shin-digs they sponsored on the Riviera and in the Alps. The people I met there – and stayed in touch with – were many of the ones that drive the industry today. (Of course, that was then, this is now: I don’t have that insider status any more, but I’ve kept in touch with and often still rely on the expert advice of people I met during that heady time.) Anyway, one day at the end of 2004, the Soitec folks said to me, “We need a newsletter.” They asked me to come up with a concept they could pitch to the Board. Since Soitec was also doing GaN SiC at the time, I thought it should be called Advanced Substrate News – ASN for short. And we agreed it should involve the entire ecosystem: end users, equipment manufacturers, academics, suppliers of all sorts, and especially: chip designers. But it was not an easy pitch. Who’d want to read about SOI wafers, they asked? Wouldn't we run out of things to say after two or at most three editions? But the idea was a solid one: ASN could be a bully pulpit for the nascent SOI ecosystem. Happily it won the day. I was named Editor-in-Chief, and have held that title ever since. Our very first edition (we were a print quarterly then) had about a dozen articles on SOI, including automotive with Philips, ultra-low power FD-SOI with Oki for Casio’s G-Shock watches (oh yes – it goes back a long ways!), low-power (by a company that Arm then bought), high-performance, high-resistivity SOI wafers for RF…it was all there. And if you look at what we cover now, it’s still all there – albeit better than ever and growing fast. (I just listened to the most recent Soitec Q4'20 quarterly financial report audiocast – announcing that they’d just had their best quarter ever – largely driven by RF-SOI.) We Need a Consortium! In 2007, the SOI Consortium was created with 19 members (a dozen of whom are still members today). As ASN Editor-in-Chief, I was honored to be part of that effort, participating in the meetings where we hashed out what it was all about and what a consortium would do. It was a great opportunity to meet the movers and shakers across the industry, many of whom I’m still in touch with. We published steadily, as the years, technologies and applications came and some went, but ASN readership continued to grow worldwide. Then in 2015, I got an email from the head of the Shanghai Academy of Sciences, which had recently spun off an SOI wafer maker called Simgui. He was (and is!) an ASN reader (though now he’s China’s Vice-Minister of Science Technology). Would I come to Shanghai and present some of the SOI-based applications ASN had been covering to his team there? They’d been working on SOI in parallel for many years, and were interested in where it was going in Europe and America. That was exciting! My first trip (of many, now) to China, it coincided with Semicon China 2015 and the announcement of the “Big Fund”. It was hall upon massive hall of stands immense and tiny, and the level of excitement was nothing short of amazing. (I was one of the only Western journalists there, and essentially broke the story in a piece I wrote for Consortium member Applied Materials’ customer magazine). That trip opened a lot of doors for me and ASN. As the SOI Consortium teamed up to with partners in China to host symposia there, we devoted more and more extensive coverage in ASN to those exciting events. [caption id="attachment_32041" align="alignright" width="328"] Here's some of our core players at the SOI Consortium: Executive Co-Directors Carlos Mazure (also of Soitec) and Jon Cheek (also of NXP) on the far left and right, respectively, Event Manager Iris Rith in the middle, me (Adele Hars) next on the right. We're joined here by Lucy Dai (2nd from left) of Simgui.[/caption] Eventually in 2016, ASN moved under the aegis of the SOI Consortium. We’re quite a jolly band that I have the privilege of working with. Granted at the time of this writing, the world is a difficult place, with so much uncertainty. But there are exciting times ahead with new products and technologies enabled by SOI, and you can be sure we’ll be covering them. RF-SOI will continue its juggernaut path in 5G mmWave. FD-SOI is steadily defining the new mainstream at the edge. The huge amounts of data the world is generating is driving photonics (which is all about SOI) to new heights. SOI for power (meaning high-voltage – think smart power) and imagers continues to grow. [caption id="attachment_32045" align="alignleft" width="99"] That's me - Adele Hars, ASN Editor-in-Chief - at the SOI Consortium's 2019 FD-SOI Symposium. (Photo courtesy VeriSilicon)[/caption] I’m honored to have brought you ASN for the last 15 years. Our archives are truly a treasure trove, and our mailing list of over 2500 really is an industry who's who. We’ve published well over a thousand (!) pieces in that time, most of which I’ve written with guidance from many an expert. However, we of course encourage our readers to pitch stories and/or submit SOI articles for publication consideration - so please, don't hesitate! I want to thank you all for your interest and your continued support. And thank you especially to all the SOI experts out there who so generously – and so patiently – share their time and enthusiasm with me and our readers. Stay safe! With warm regards, - Adele P.S. If you're not already on our emailing list and would like to join, just fill in the form at the bottom of this page. Thanks!

It should really be called SOI photonics – not just silicon photonics, quipped Soitec CTO Christophe Maleville at the SOI Consortium Japan event last fall. You’ve got to have SOI for the waveguides. There are megatrends driving significant growth in photonics – and they were all covered at the event. This is the final post in our coverage of the SOI Consortium’s Japan event (thank you for your patience!). It covers the photonics-related presentations by Soitec, Leti, Cisco/Luxtera, GlobalFoundries, Cadence and TowerJazz. Most of these presentations are now posted on the SOI Consortium website – you can access them if your organization is a member of the consortium. By way of reminder, the Japan SOI Symposium was a great success, with both days well attended. In case you missed our previous posts about the event, you’ll want to go back and read them, too. The first post covered the 5G/RF-SOI presentations by ST, Toshiba, Incize, GF, Silvaco and Sitri – you can read it here. The second post on the event covered eight very informative presentations on SOI in IoT and automotive by NXP, Dolphin Design, Leti, Silvaco, Arm, I-fuse and Secure-IC – you can read that here. Note that you can click on any of the illustrations to see enlarged versions. And now without further ado, here are the summaries of the photonics presentations. SOI Enabling Photonics – Ecosystem and Market Outlook – by Aziz Alami-Idrissi, GM Specialty SOI, Soitec. [caption id="attachment_28773" align="alignleft" width="233"] (Courtesy: Soitec SOI Consortium)[/caption] The megatrends in SOI photonics are: 5G (for more bandwidth, HPC, edge quantum computing), data centers (for high data rate transceivers and high-switch bandwidth), sensors (lidar, gas/chemical and gyroscopes) and biosensors (especially for medical). These are driving big changes: the 44% CAGR means the market is growing from a current TAM of about 500M$ to over 4B$ in 2025. One thing that’s really interesting is the expansion of the photonics market into these new fields in the next few years. While in 2019 90% of the photonics market served data center applications (the other 10% is for long haul), in 2025 optical I/O’s will account for over a third of the photonics market TAM. The other applications making an impact include AI, quantum, lidar (which will move into high-volume manufacturing in 2024) and medical sensors (hitting high-volume in 2023). For its part, Soitec is strengthening its portfolio with 8” and 12” large product coverage, new product sampling engaged, and extended features including newer engineered layers and RF immunity. Advanced Silicon Photonic Solutions Leverage SOI Technology – Eleonore Hardy, Business Development Manager, Silicon Photonics, CEA-Leti [caption id="attachment_28769" align="alignright" width="358"] (Courtesy: Leti SOI Consortium)[/caption] Leti helps companies make photonics products they can bring to volume foundries, explained Hardy. (btw, they’re presenting 21 (!) papers – including 5 invited – at PhotonicsWest 2020. Read about that here). You want to do integrated photonics to bring down costs, reduce power consumption, and scale (for higher volumes and reduced footprint). There are essentially three substrate choices: InP, SiN or SOI. SOI uses CMOS processes, so it’s low-cost and can be used in high-density photonic integrated circuits. What about the laser? Leti has developed III-V on silicon bonding, so you can have the laser on 4” III-V with a 300mm CMOS process (this is what Intel’s doing). They’re moving to 300mm wafers, 3D and advanced packaging. While communications is the big application realm, Leti is also applying photonics in automotive, medical, environment and computing. In the computing realm she gave the example of the European QuantERA SQUARE (Silicon Photonics for Quantum Fibre Networks) project for which Leti is doing the quantum emitter for absolute security and computing, wherein the transceiver/receiver for quantum cryptography integrates a hybrid III-V on silicon pump laser. Other examples of their work include miniature, low-cost and agile lidar for automotive and industrial applications (they’re working on a beam-steering emitter for an optical phased array). GlobalFoundries Silicon Photonics Solutions for Wired Infrastructure – Anthony Yu, VP, GF [caption id="attachment_28770" align="alignleft" width="684"] (Courtesy: GlobalFoundries SOI Consortium)[/caption] GF is giving their photonics business a big push. Optical interconnects are the future, said Yu, so they’re putting a lot of money into it. With data streaming multiplying by 3x/year and a current foundry TAM of $63 billion, the opportunity is huge. Fab 10 in Fishkill runs their 90WG process on 300mm wafers. A new process, 45CLO (also on 300mm) for O and C bands is going into the Malta fab. A big focus here are optical transceivers that convert RF signals to light. They see RF on SOI in a monolithic solution is needed to serve 100Gbs applications. They’re also moving to co-packaging optics: the packing technology will surround it with photonic chiplets. Customers have indicated that pulling the signals off the chips is limited by power, so they’ve worked hard on the fiber attach with MEMS and packaging technology for co-packaging. GF relies on substrate providers for high-quality SOI, and they have a world-class development team, he concluded. Integrated Electro-Photonics Design Platform – A multi-physics, multi-fabrics system design solution – Scott Li, Sr. AE Manager of Custom IC Platform, Cadence [caption id="attachment_28771" align="alignright" width="374"] (Courtesy: Cadence SOI Consortium)[/caption] This talk focused on photonics design challenges and solutions – including the CurvyCore™-based PDK for waveguide creation modal properties calculation that Cadence will soon be announcing. It’s a math-based engine that generates complex curvy shapes to support photonics. The first design challenges, said Li, are at the circuit level: how to do the schematics. The detailing tools, timesteps management and circuit simulation need to give the user the best performance. Cadence is working in close collaboration with a company called Lumericable on this. The next set of design challenges come at layout – especially generating curvilinear layout for any shape so that there are no gaps in connections. This is where CurvyCore comes in, fully automating layout and making it easy to modify. This includes place route, DRC and LVS for curvy shapes. The final challenge is at the system level. There is work to do here, but Cadence is collaborating closely on solutions with key partners. The ultimate goal is for photonics layout and editing to be available with all the features designers get in electronics editing. Silicon Photonics for High Volume and High Performance Optical Interconnects Applications – Thierry Pinguet, Technical Leader Engineering, Cisco /Luxtera [caption id="attachment_28772" align="alignleft" width="396"] (Courtesy: Cisco/Luxtera SOI Consortium)[/caption] Over the last decade there’s been steady growth in optical high speed interconnect solutions, mainly driven by HPC, enterprise, and especially the hyperscale datacenter. The largest volumes are for intra datacenter interconnect (between servers). Now mobile applications for backhaul are also driving volume for high speed optical interconnect for 5G network implementation. ASICs and photonics are getting closer as the industry moves to put them in the same package. But everybody does silicon photonics differently (even within Cisco). Luxtera tries to use the same infrastructure as electronics, but patterning is still a challenge: it’s not 90o “Manhattan” style. The wafers are no problem – they work with leading wafer suppliers like Soitec and SEH. They have explored a “double SOI” substrate (like a mirror), which showed large insertion loss improvements in grating couplers . For the electronics and the laser (MEMS), they do a micropackage, although at one point they also did monolithic integration. For better performance, they’re moving to TSVs. A hot topic is ASIC and photonics co-packaging. You can use optical tiles, but then the light is remote, like a power supply. No matter how you do it, though, the bottom line is that silicon photonics is the only way forward for the data center. PH18: World’s First Open Commercial Silicon Photonics Process and PDK from TowerJazz – Masanobu Kumazaki, Engineer, TowerJazz. This presentation was given in Japanese without translation into English, and is not available on the consortium website. But the slides showed at the event indicated that their PH18 is the world’s first open commercial silicon photonics offering. For optical transceiver components, silicon photonics provides another opportunity for a specialty foundry. It is a high-growth market. The TowerJazz offering is 220nm SOI, and uses standard EDA tools from Synopsys, Cadence and Mentor for design flow.

Digitimes Research is predicting a doubling of the global SOI market between 2019 and 2024, "...thanks to significant expansion in applications to mobile devices, communication infrastructure, IoT devices and automotive electronics in the 5G era...". (Read the full article in Digitimes here.) Beyond the continued enormous success of SOI in front-end modules (FEMs) for RF (aka RF-SOI, which as we know is found in every smartphone on the planet), the report cites high growth specialty areas such as imaging chips for smartphones and photonics in data centers. They also predict that FD-SOI will be "massively applied" in 5G, with applications in base stations and data centers. And of course, low voltage and low power consumption will be the big drivers in IoT and wearables. All this is driving Soitec, the major SOI wafer manufacturer, to expand capacity at its facilities in France and Singapore in 2020, says the report. This is happening in strategic cooperation with Shanghai-based Simgui. As noted in ASN about a year ago, Soitec and China’s SOI wafer leader Simgui announced an enhanced partnership and increased production capacity of 200mm SOI wafers in China, securing future growth. At that time the two companies redefined their manufacturing and licensing relationship to better serve the growing global market for RF-SOI in mobile and Power-SOI in automotive and consumer electronics. Separately, Okmetic of Finland, which specializes in SOI wafers for MEMS, sensors and RF, is also doubling its capacity (we covered their 2019 Shanghai presentation here.) (Image courtesy: Soitec)

Here is our second post about the SOI Consortium’s Japan Symposium this past fall. This will provide summaries of eight very informative presentations on SOI in IoT and automotive by NXP, Dolphin Design, Leti, Silvaco, Arm, I-fuse and Secure-IC. There’s a lot of content to summarize, so this post is about twice as long as those we usually do. But you’ll want to read right to the end, for sure! In case you missed our previous post on the 5G/RF-SOI presentations given at the Japan event, you can read it here. Our next and final post on the Japan event will cover photonics presentations by Cisco/Luxtera, TowerJazz, GlobalFoundries, Leti, Cadence and Soitec. By way of reminder, the Japan SOI Symposium was a great success, with both days well attended. If your company is a member of the SOI Consortium, you can now access most of these presentations on our website. You can also click on the illustrations in this post to see them in enlarged versions. [caption id="attachment_28106" align="alignleft" width="366"] (Courtesy: NXP SOI Consortium)[/caption] The IoT World Enabled Through SOI - Jon Cheek, NXP Sr. Director, Front-End Innovation For NXP, FD-SOI introduced the ability to easily add different functionalities to the technology node like ULP, eNVM, support for high-voltage and embedding RF. For them, said Cheek, it’s about the range, and with adaptive back bias, you can “get crazy”, so you can really achieve amazing things. In fact, they think they now have the lowest leakage SRAM in the industry, thanks to body biasing. The i.MX 7ULP is finding significant success in wearables. Their “crossover” chips are the latest beneficiaries of FD-SOI with body biasing. The “new normal”, they offer huge improvements for real-time operating systems – which is of course key for edge computing. (As you can imagine, the audience was intently taking notes throughout -- this was a really excellent talk!) It also is great for machine learning, as it is designed to unlock the potential of voice-assisted end nodes. The IP they needed is now available from multiple vendors, noted Cheek, such as Tensilica and VeriSilicon. Another key play will be in visuals for industrial computing. He concluded by observing that the automobile is the ultimate IoT machine, with 10x the amount of code now found in leading edge airplanes. That’s where the i.MX8 and 8X come in. [caption id="attachment_28104" align="alignright" width="323"] (Courtesy: NXP SOI Consortium)[/caption] High-Voltage SOI – Enabling Automotive- NXP Jon Cheek gave this presentation on the second day of the Japan event. Long-time followers of SOI will know that NXP has been excelling in high-voltage (HV) SOI for well over two decades now (including the pioneering work done by Philips, now part of NXP: their EZ-HV SOI patent dates back to 1993). It’s probably safe to say that NXP's SOI-based automotive chips are used by virtually every carmaker on the planet. HV follows well behind the leading edge – it’s currently mostly around 130nm (the limits are related to metalization). Reason #1 it’s on SOI? SOI-based technologies are incredibly reliable, especially in the automotive culture targeting the three zeros (0 emissions, 0 accidents and 0 time wasted). Today’s car manufacturer’s are going to a distributed environment, and SOI still provides a huge advantage, making parts that are smaller, lower power and more reliable – so it drives a lower BOM for automakers.In conclusion, said Cheek, NXP’s leadership through SOI innovation enables scalable solutions, high voltage analog integration, sensor integration, and reliable safe passenger experience. [caption id="attachment_28101" align="alignleft" width="432"] (Courtesy: Dolphin Design SOI Consortium)[/caption] Improving SoC Energy-Efficiency with Dolphin Design Platforms – Nicolaus Gaude, BizDev Product Marketing, Dolphin Design Dolphin has a series of platforms, techniques and IP for increasing speed and drastically improving energy efficiency in SoC design. Gaude introduced their Speed Platforms, which include a Power Management Platform and a Processing platform, both of which make dramatic improvements in energy efficiency. The Power Management Platform keeps control of power management from architecture to design, resulting in a 10x improvement in energy efficiency. The Processing Platform comprises configurable RTL clusters for best-in-class (100x) energy-efficiency. Gaude then turned to the Dolphin’s Adaptive-Body Bias (ABB) IP for breakthrough energy-efficiency with FD-SOI. This is real-time, “on-the-fly” body biasing: the IP does it all. It is silicon-proven on GlobalFoundries’ 22FDX with Arm cores and Invecus standards cells SRAM, with breakthrough energy efficiency. [caption id="attachment_28108" align="alignright" width="363"] (Courtesy: Silvaco SOI Consortium)[/caption] Platform Infrastructure for SOI-IP Ecosystem – Thomas Blaesi, VP of Global Marketing, Silvaco The massive use of IP is both an advantage and a challenge, began Blaesi. There are solutions out there, but they are disconnected. Typically SoC/IP designers, IP librarians and support folks use various systems, while procurement, finance and legal use others. This is a problem for both the providers and the consumers of IP. Silvaco has a new system called Xena that centrally organizes all IP data: it’s an IP repository for tracking accounts, products, contracts, devices, support, compliance and reporting. One of the first beneficiaries of Xena will be the SOI ecosystem, as providers of SOI IP are already signing on. Beyond the organizational advantages, Xena has patented “finger printing” and “DNA analysis”, so there is a digital representation of each IP on an SoC that can’t be reverse engineered. Each fingerprint contains list of unique signatures of each file in an IP or SoC. A file’s unique signature is created from the entire file content, and that signature is guaranteed to be unique to that content. It enhances support for all versions of common design files: hard IP, soft IP, and embedded software. Because it’s cloud or enterprise based, it will be particularly useful for large organizations. Fingerprinting and DNA analysis are vendor agnostic, universal, and easy-to-use tools and methodologies for IP lifecycle management, he concluded. [caption id="attachment_28103" align="alignleft" width="463"] (Courtesy: Leti SOI Consortium)[/caption] Ultra-low power, FD-SOI based IP, in the space of IoT, Health Care, Smart Connectivity 5G – Michael Tchagaspanian, EVP Industrial Partnerships, CEA-Leti This presentation began with a review of the explosion in devices with IoT and related investments, then connected all the ways in which innovations powerhouse Leti is contributing – from the SOI wafer level to the chip level – which is to say practically everywhere! Especially hot topics in FD-SOI included: the roadmap to sub-10nm; CoolCube monolithic 3D; new embedded memories; power amplifiers; Ultra-Wide Range DSP; smart sensing local processing (including haptics, imaging, infrared advanced processing); local processing with edge AI; and spike coding for deep neural networks. He showed information on two always-on/on-demand transmission 28nm FD-SOI IoT test chips that taped out in mid-2019: the Warrior and the Samurai. And finally, he covered silicon-proven IP that Leti has for FD-SOI including power management blocks, lots of RF IP (including low-power RF wake-up), sensor interfaces, clockless network-on-chip and new SRAM technologies. These and more will be covered at the next Leti Innovation Days in Grenoble (June 2020) – during which in parallel, btw, there will also be a European SOI Summit hosted by the SOI Consortium. [caption id="attachment_28099" align="alignright" width="475"] (Courtesy: Arm SOI Consortium)[/caption] FDSOI Enablement for a Total Compute Future – Manuj Rahor, Director Emerging Technologies Product Marketing, Arm Subtitled A perspective on system optimization with Arm FDSOI IP, this presentation reviewed how Arm is enabling system gains through optimization across IP boundaries. This is work happening in the Arm Artisan Physical Design Group (PDG), which provides logic, memory and POP (processor optimization package) IP as well as various products to help ease implementation challenges for advanced nodes. In this case the focus is on Total Compute enablers on Samsung 28nm FD-SOI (called 28FDS) – specifically three building blocks recently launched on FD-SOI. The first is the 128Mb Wide Capacity embedded MRAM (an eNVM to replace eFlash) compiler for storage delivered to Samsung in July `19. It was demonstrated in silicon in the Musca-S1 Smart IoT Device Demonstrator on 28FDS, an energy efficient IoT device with eMRAM secure boot on-chip storage. [Read our coverage from March 2019 here.] The second is a novel design developed with Spin Memory. It recently taped out on 28FDS and is slated for delivery in 2020. Adding an “Endurance Engine to the eMRAM that was delivered in 2019, the ARM-Spin innovation delivers RAM-like performance with increased speed and endurance. What’s at issue here is a change in use cases. Use cases served by eFlash were not written to that often; now with sensors (as in IoT) that continually gather and write data, eFlash endurance is not sufficient. The third is billed as an SRAM replacement compiler. Its MRAM as RAM in A-class systems, with significant energy and performance gains. Again, this is a use-case issue: retention is lower (this is for weeks months, whereas the other solutions are for 10 years). But you can get more RAM than SRAM into the same footprint, so you get a 60% reduction in DRAM traffic and increased performance. Delivery for this is marked as 2020+. [caption id="attachment_28100" align="alignleft" width="294"] (Courtesy: Attopsemi SOI Consortium)[/caption] I-fuse™: A Disruptive OTP Technology – Dr. Shine Chung, Chairman, Attopsemi I-fuse is a disruptive OTP (One-Time Programmable) technology without disrupting a fuse. The goal was a 100x increase in reliability at 1/100th of the cell size and 1/10th the power. It has now been demonstrated in GlobalFoundries’ 22FDX FD-SOI technology for energy harvesting applications. In the OTP IP technologies, explained Dr. Chung, they defied the conventional wisdom of breaking a fuse to maintain a permanent programmed state forever: Attopsemi’s I-fuse™ is actually a “non-breaking” fuse. “I don’t mind to break a fuse, but I do care about breaking a fuse by explosion”, said Dr. Chung. “The I-V curve of programming a fuse beyond the break point actually shows more like an explosion. The anti-fuse OTP also ruptures gate oxide by explosion. On the contrary, I-fuse™ is a disruptive OTP technology without disrupting a fuse.” He concluded, “By using MOS as switches to enable discharging two capacitors, through cell and reference cell respectively, and compare the discharge rates, the resistance in the cell can be determined higher or lower than the reference resistance so as to convert into logic data. The read energy consumed is only 1/100 of the conventional sensing, which is good for energy harvest IoT applications. Eventually most IoT devices will be battery-less.” [caption id="attachment_28107" align="alignright" width="398"] (Courtesy: Secure-IC SOI Consortium)[/caption] AIoT Embedded Security Using FD-SOI – Yan-Taro Clochard, Japan Sales Director, Secure-IC In addition to opportunities, the impact of AI on IoT (aka AIoT) adds new threats to edge devices. Design for security and in-depth security is required, down to the physical layer. For example in automotive, sensors gather data and AI analyzes it – but the enabler is security. The challenge of AI is the increase in data and connectivity with unsecured devices. FD-SOI is a key for Secure-IC’s Securyzer security module: it leveragesFD-SOI properties to secure the AIoT world. It is flexible, and tuned for each customer. Here, FD-SOI enables the creation of physically secure systems, with secure boot and firmware updates, cryptographic services, key management and secure storage.

The industry continues rewarding luminaries of the SOI ecosystem. Recently recognized are Jean-Pierre Raskin for RF-SOI, Lattice Semi and NXP for FD-SOI products, and Bich-Yen Nguyen for her work in SOI. The SOI Consortium extends hearty congratulations to all the winners and their teams. Professor Jean-Pierre Raskin was awarded by the prestigious Médaille Ampère 2019 for the originality of his scientific work in the field of RF-SOI technologies for wireless communication. The international award was delivered by Mr. François Gérin, president of the SEE - Société de l'électricité, de l'électronique et des technologies de l'information et de la communication, on December 3rd, 2019, in Paris, France. We’ve long covered the work of Professor Raskin and his UCLouvain team – which is largely responsible for why SOI is in every smartphone on the planet. It’s a great story (read it here) and it goes on! In his Ampère acceptance speech, Professor Raskin said, “...significant industrial research and development is being performed toward fully integrated SOI front-end-modules. Notably, the 45nm PD-SOI [RF-SOI] and 28nm and 22nm FD-SOI nodes are being extensively designed with to develop 5G mm-wave low-noise amplifiers (LNA), power amplifiers (PA) and switches, in particular at 28 GHz. […] Overall, SOI is expected to be a big contender as a technological platform to enable mass production of millimeter wave 5G and ultra-low power RF IoT devices and products in the near future.” [caption id="attachment_27119" align="alignleft" width="294"] Lattice CEO Jim Anderson (left) and Mark Lipacis (right), Managing Director of Jefferies (Courtesy: GSA Lattice Semi)[/caption] Lattice Semiconductor was the recipient of the Global Semiconductor Alliance’s (GSA) 2019 Analyst Favorite Semiconductor Company award based on technology and financial performance. The GSA awards recognize the achievements of top performing semiconductor companies and the 2019 winners were announced at the annual GSA Awards Ceremony held on December 5, 2019. In thanking his team, Lattice CEO Jim Anderson, added, "We are even more excited about the solid execution of our product roadmap, specifically, the accelerated product rollouts of both CrosslinkPlus and our next generation FPGA platform based on FDSOI technology, which will be key catalysts to our achieving sustained long-term revenue and profitability growth.” [caption id="attachment_27120" align="alignright" width="71"] (Courtesy: NXP)[/caption] NXP was a recipient of a Best-in-Show Award at the 2019 Arm TechCon this fall. As was noted by Brandon Lewis, Editor-in-Chief of Embedded Computing Design, “The i.MX RT1170 crossover MCU marks a technology breakthrough in MCUs, running up to 1GHz while maintaining low-power efficiency. It is architected to deliver a record-setting performance, with a 6468 CoreMark score and 2974 DMIPS while executing from on-chip memory. The solution uses advanced 28nm FD-SOI [note: fabbed by Samsung Foundry] technology, making NXP the first company to build MCUs in this advanced technology node. This new MCU family is redefining the "edge" and MCU landscape, bringing unprecedented performance and high levels of integration to propel industrial, IoT, and automotive applications.” And finally, Soitec Senior Fellow Bich-Yen Nguyen was elevated to the status of IEEE Fellow in the Class of 2020 “for contributions to silicon on insulator technology”. As previously noted in her IEEE bio, “Her honors and awards include the Dan Noble Fellow, the highest technical award at Motorola; the Master of Innovation Award; and the first national Women in Technology Lifetime Achievement Award. She holds over 200 worldwide patents and has authored more than 180 technical papers on integrated circuit technologies.”

The SOI Industry Consortium awarded two luminaries of the semiconductor industry for pioneering advances in RF-SOI, a technology now found in all cellphones. Jim Cable (shown on the left in the photo above), Chairman and CTO of pSemi, a Murata Company, and Herb Huang, CEO and GM of Ninbo Semiconductor received the awards during a gala following the SOI Consortium's 2019 RF-SOI Workshop in Shanghai. "Thanks in large part to the innovation, dedication and perseverance of men like Jim Cable and Herb Huang, RF technology based on SOI is now ubiquitous," said Carlos Mazure (on the right in the photo), Chairman and Executive Director of the SOI Consortium. "Jim Cable drove the development of SOI and RF switches that are now in every cellphone, and Herb Huang has been a key contributor to SOI technology and a champion of the SOI foundry ecosystem in China. We are happy and honored to recognize the contributions they have made to advancing RF-SOI globally." Jim Cable joined pSemi (formerly Peregrine Semiconductor) in 1996 and held technical leadership roles before serving as CEO from 2002 to 2017. An early pioneer of SOI technology, Cable believed SOI would ultimately replace other technologies in the RF front end, and he pushed his team to innovate. Cable is a co-inventor on more than 70 semiconductor and technology patents, including breakthroughs in SOI-based processes for CMOS RF switch linearity and integration that are used by all smartphones today, and will become even more mission-critical in 5G and millimeter-wave markets. He received his B.S. in physics from UC Riverside and his master's degree and Ph.D. in electrical engineering from UCLA. Herb Huang is CEO of Ningbo Semiconductor International Corporation (NSI), which is based in Ningbo, China. A driver of the RF-SOI ecosystem in China, he spent much of his career at SMIC, the largest semiconductor foundry company in mainland China. In 2016, SMIC created NSI as a joint venture subsidiary with China IC Investment Fund, Ningbo Economic Development Zone Industrial Investment Company, Ltd. and other IC investment funds. Under Huang's leadership, NSI optimized the process and model of a 0.13um RF-SOI technology platform transferred from SMIC. Now in mass production, the RF-SOI technology platform supports customers in IC design and product development for new generations of radio communications. Huang holds both a Ph.D in Materials Science and Engineering and an MBA from the University of Minnesota.

The 2019 International RF-SOI Workshop in Shanghai was packed to overflowing, with over 500 attendees, noted SOI Consortium Chairman Executive Director, Carlos Mazure. There were 16 presentations over the course of the day – every one of them excellent – so it will take two posts to cover them all. We covered Danni Song's compelling keynote in a previous post – see it here. In this post, we’ll cover the remaining keynotes and the morning session, which was dedicated to 5G deployment. In the next post, we’ll cover the afternoon sessions, which were dedicated to the China RF-SOI ecosystem, and the RF value chain. PDFs of the presentations are not yet posted, and then they will only be available to those whose companies belong to the SOI Consortium. But we’ve summarized them all for you, so read on! KeynotespSemi: 30 Years of RF-SOI – Past, Present and Future (Jim Cable, Chairman and CTO, pSemi (a Murata company))The keynote by RF-SOI legend Jim Cable chronicled his always-innovating journey from digital to RF via sapphire then SOI. (Cable's work was recognized in an award that evening.) His original vision back in the early days was for a RF front-end module (FEM) + CMOS transceiver. At the time, doing it on sapphire (an insulator) rather than bulk made it much easier, as sapphire eliminated the non-linear capacitances. That was the beginning of their UltraCMOS technology, and though it did very well, sapphire was only available in 6” wafers. So pSemi (or Peregrine, as it was known at the time), engaged with Soitec on bonded-SOS. “It was a killer technology, and the marketshare we won was staggering,” he recalled, and helped convince Soitec RF-SOI was worth looking at. The goal is to handle high RF power levels: you can use SOI to handle higher voltages than you'd think were possible. They added an invention they called HaRP, that dealt with accumulated charges and enabled them to hit the linearity specs on silicon. With that, he explained, they came to completely dominate the switch industry. UltraCMOS evolved, getting 60% smaller with 20x better linearity – but now of course you have 50 switches, not six. He heralded the great partnership they have with GlobalFoundries, noting, “We were pioneers in this field.” In fact, in 2017 they were in the top 10 for IP generation in semiconductor manufacturing. Now comes mmWave, where he says, “We see everything we believed and more.” They're currently sampling an 8-channel mmWave RFFE (RF Front End). Soitec: 5G-on-Insulator: the 5th Gear In Mobile Radio (Michael Reiha, GM, Soitec)Michael Reiha's talk centered on how SOI wafer-leader Soitec is positioning itself on 5G, which, he explained, demands a wider portfolio. Soitec looked at what they could do to make 5G ready for sub-6GHz. Massive MIMO (mMIMO) is an efficient technique to improve throughput. With SOI, you can reduce the power it takes, making it a good choice for urban environments. RF-SOI is a candidate for power amplifiers, and FD-SOI is enabling more users to be added. The concept of network sharing is an opportunity for compact, low-cost filters that can meet the requirements with simpler, lower-cost, higher-efficiency filters. That's why they've just announced a new substrate called piezo-on-insulator (POI). However, total cost-of-ownership is not just how much a product costs, but how much it costs to run it.. Currently, RF and mechanics dominate the bill-of-materials, so you need to decrease the number of RF FEM components and get savings scaled with the array size. The main challenge of SOI is in efficiency, but the advantage is that it can be used in integrating digital with analog sensing and RF. Then you can use AI sensing for tracking temperature, for example, and control for 5G optimization. In short, with RF-SOI, you apply AI to the radio head, especially for things like mMIMO. And btw, he added, Soitec currently has capacity of two million wafers per year. SESSION 1 – 5G DeploymentYole: 5G is ON. Which Impact for RFSOI Technologies? (Cederic Malaquin, Technology Market Analyst)There are over a thousand 5G networks available today worldwide, said Cederic Malaquin. Adoption is accelerating, driven by 5G cloud gaming, AR/VR/XR, 5G multi-video calling and stadiums. However, carriers need better ROI. 5G should address this so that customers are better served. MIMO and carrier aggregation (CA) are the main techniques supporting network capacity and coverage improvements. 5G NR will bring more spectrum. With each generation putting more content in phones, new spectrum is happening in sub6 and mmWave. The impact of 5G on mobile phones is huge in terms of both content and complexity. Some phonemakers (like Apple and Samsung) are moving towards increased integration. Others (like Huawei) are going more for discretes. Yole sees tuners, switches / LNA as addressable by RF-SOI, but they are less convinced about power amplifiers. They also see SiP (system in package) as prevailing over integration. The 5G mobile and base station markets will really build up in 2022-25. RF-SOI will remain the mainstream technology for switches and antenna tuners through at least 2025: they don't see anything else replacing it. There is still increasing demand for 8” wafers. 12” wafers growth comes from integrated switch/LNAs, which comes from the Tier 1's. In the front-end space, Murata leads in dollars by far, followed by Skyworks and others. Though mmWave is not yet clear, there are opportunities for RF-SOI. ST: 5G Deployment Driving RF and SOI Technology Opportunity (Laura Formenti, Sr. Director)STMicroelectronics has a long history in RF-SOI, noted Laura Formenti, dating back to 2000 when they started collaborating with Soitec and Leti. An IDM, ST also offers foundry services. For 5G, their foundry offering includes H9SOIFEM, C65SOIFEM and SOI mmW for high-performance analog, dedicated RF processes for RF switches, LNA, PA plus RFFEM. Then they have FD-SOI for RF, mixed signal and digital integration. From antennas to transceivers there's an opportunity for full integration. For infrastructure, it depends on the customer preferences. 12” C65SOIFEM was introduced in 2019, and 12” SOIMMW will be introduced in 2020. Both their fabs at Crolles and Rousset, France, are in production. H9SOIFEM is for 4G and 5G sub-6GHz RF FEMs, enabling monolithic integration of the PA, LNA and switches, which is especially good for wifi. The C65SOIFEM is high-performance. Panel: 5G Deployment in China, Jeffrey Wang, CEO, Simgui Technology, moderatorWith Danni Song (China Mobile), Jim Cable (pSemi), Peter Rabbeni (GF), YangYang Pen (SmarterMicro), Paul Hurwitz (TJ), Michael Reiha (Soitec)Q: Why sub-6GHz and not mmWave?Danni Song said its a question of available spectrum. In sub-6, you get the same level of coverage with fewer base stations; also, sub-6 is much more mature. When will mmWave be ready? It depends. In the US, yes, but in China the spectrum allocation for mmWave has not yet been done. So it's a wait and see for the industry to be ready. Peter Rabbeni agreed, adding that in the US sub-6 is crowded and conflicts with military bands. Paul Hurwitz added that mmWave is for fixed wireless access. Michael Reiha added that mmWave has advanced a lot even in the last few months (Verizon in Washington, DC, for example), so there is momentum.Q: Does China lead in the sub-6GHz opportunity?Jim Cable said that at pSemi they have two business models: mobile and infrastructure. He sees massive MIMO in base stations as huge (though in mobile their role is more supporting Murata). Peter Rabbeni added that they're working with innovative partners in China, and that GF also offers skills in services and packaging. Yangyang Peng sees big opportunites with 5G for SmarterMicro and China. Paul Hurwitz has seen an increase in the capabilities of RF companies in China, and that the market in China moves faster than elsewhere. Michael Reiha sees China as strategic, and because there is central deployment, they can plan with the right partners.Q: Data usage will be huge – what will it cost to individual users?Danni Song said 5G phones will be expensive, but consumers want them, so we need to bring down costs and increase performance – but what about power consumption? Power needs to come down, maybe levering things like sleep mode more. For 3G 4G, she noted, they had lots of time. People are pushing hard for 5G, but there's a need for patience. Yangyang Peng said he didn't want to pay more than for 4G. In summary, Jim Cable noted that mmWave will demand huge amounts of silicon, to which Paul Hurwitz agreed, and Michael Reiha said Soitec will be ready. Everybody agreed that 3D packaging would be very important, especially for mmWave. And that's it for our coverage of the morning. Next up we'll cover the presentations given during the afternoon.