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GlobalFoundries recently announced that its embedded magnetoresistive non-volatile memory (eMRAM) has entered production on the company’s 22nm FD-SOI (22FDX®) platform. (See the full press release here.) The company says this advanced embedded non-volatile memory on its FDX™ platform provides a cost-effective solution for low-power, non-volatile code and data storage applications. It is now working with several clients with multiple production tape-outs scheduled in 2020. GF heralds the announcement as a significant industry milestone, demonstrating the scalability of eMRAM as a cost-effective option at advanced process nodes for IoT, general-purpose microcontrollers, automotive, edge-AI, and other low-power applications. [caption id="attachment_31334" align="alignright" width="485"] (Courtesy: GlobalFoundries. Click to enlarge.)[/caption] “We continue our commitment to differentiate our FDX platform with robust, feature rich solutions that allow our clients to build innovative products for high performance and low power applications,” said Mike Hogan, senior vice president and general manager of Automotive and Industrial Multi-market at GlobalFoundries. “Our differentiated eMRAM, deployed on the industry’s most advanced FDX platform, delivers a unique combination of high performance RF, low power logic and integrated power management in an easy-to-integrate eMRAM solution that enables our clients to deliver a new generation of ultra-low power MCUs and connected IoT applications.”[bctt tweet="In production! @GlobalFoundries’ eMRAM on #22FDX FD-SOI replaces #eFlash for #IoT genpurpose #microcontrollers #automotive #edgeAI more. #lowpower #chipdesign #FDSOI" username="@soiconsortium"] [caption id="attachment_31330" align="alignleft" width="467"] (Courtesy: GlobalFoundries. Click to enlarge.)[/caption] Designed as a replacement for high-volume embedded NOR flash (eFlash), GF’s eMRAM allows designers to extend their existing IoT and microcontroller unit architectures to access the power and density benefits of technology nodes below 28nm. It is a highly versatile and robust embedded non-volatile memory (eNVM) that has passed five rigorous real-world solder reflow tests, and has demonstrated 100,000-cycle endurance and 10-year data retention across the -40°C to 125°C temperature range. The FDX eMRAM solution supports AEC-Q100 quality grade 2 designs, with development in process to support an AEC-Q100 quality grade 1 solution next year. [caption id="attachment_31331" align="alignright" width="280"] GF’s state-of-the-art 300mm production line at Fab 1 in Dresden, Germany, will support volume production of 22FDX with MRAM. (Courtesy: GlobalFoundries)[/caption] Custom design kits featuring drop-in, silicon validated MRAM macros ranging from 4 to 48 mega-bits, along with the option of MRAM built-in-self-test support is available today from GF and their design partners. eMRAM is a scalable feature that is expected to be available on both FinFET and future FDX platforms as a part of the company’s advanced eNVM roadmap. GF’s state-of-the-art 300mm production line at Fab 1 in Dresden, Germany, will support volume production of 22FDX with MRAM. Prior to this announcement, an excellent GF blog by David Lammers recapped GF's 2019 IEDM presentation of their eMRAM reliability data. You can read that here. It also provides a lot of interesting background information.

The GAP9, GreenWaves Technologies latest IoT application processor -- which is being fabbed on GlobalFoundries 22FDX (FD-SOI) technology -- will be sampling in the first half of 2020, according to EETimes (read the whole article here). Mass production is slated for 2021. Greenwaves (which has been an SOI Consortium member for several years now) is a fabless semiconductor startup designing disruptive ultra-low power embedded solutions for AI processing in sensing devices at the very edge. GreenWaves marketing director Martin Croome told EETimes, “We are using the body biasing ability in FD-SOI to allow us to achieve even lower power consumption.” Compared to GreenWaves’ currently shipping product, GAP8 (which is on a 55nm bulk process), GAP9 reduces energy consumption by 5 times while enabling inference on neural networks 10 times larger. This is thanks to architectural enhancements and the move to GF's 22FDX semiconductor process. The new chip delivers a peak cluster memory bandwidth of 41.6 GB/sec and up to 50 GOPS combined compute power at an overall power consumption of 50mW. It enables customers to embed machine learning and signal processing capabilities into battery operated or energy harvesting devices such as IoT sensors in smart building, consumer and industrial markets and consumer and medical wearable devices. GAP9 was showcased at the last RISC-V Summit in San Jose (read the full press release here). [caption id="attachment_29061" align="alignnone" width="400"] GAP9 Block diagram (Courtesy: GreenWaves)[/caption] Some of the (many!) features include: 10 identical high performance, extended ISA, RISC-V ISA cores (cluster of 9 cores for compute-intensive tasks and a fabric controller core for control and communication) Dynamic voltage frequency scaling and automatic body biasing Multiple power states: deep sleep, deep sleep with retentive RAM, low activity, SOC on, SOC on cluster on Click here for a full GAP9 product brief.

It should really be called SOI photonics – not just silicon photonics, quipped Soitec CTO Christophe Maleville at the SOI Consortium Japan event last fall. You’ve got to have SOI for the waveguides. There are megatrends driving significant growth in photonics – and they were all covered at the event. This is the final post in our coverage of the SOI Consortium’s Japan event (thank you for your patience!). It covers the photonics-related presentations by Soitec, Leti, Cisco/Luxtera, GlobalFoundries, Cadence and TowerJazz. Most of these presentations are now posted on the SOI Consortium website – you can access them if your organization is a member of the consortium. By way of reminder, the Japan SOI Symposium was a great success, with both days well attended. In case you missed our previous posts about the event, you’ll want to go back and read them, too. The first post covered the 5G/RF-SOI presentations by ST, Toshiba, Incize, GF, Silvaco and Sitri – you can read it here. The second post on the event covered eight very informative presentations on SOI in IoT and automotive by NXP, Dolphin Design, Leti, Silvaco, Arm, I-fuse and Secure-IC – you can read that here. Note that you can click on any of the illustrations to see enlarged versions. And now without further ado, here are the summaries of the photonics presentations. SOI Enabling Photonics – Ecosystem and Market Outlook – by Aziz Alami-Idrissi, GM Specialty SOI, Soitec. [caption id="attachment_28773" align="alignleft" width="233"] (Courtesy: Soitec SOI Consortium)[/caption] The megatrends in SOI photonics are: 5G (for more bandwidth, HPC, edge quantum computing), data centers (for high data rate transceivers and high-switch bandwidth), sensors (lidar, gas/chemical and gyroscopes) and biosensors (especially for medical). These are driving big changes: the 44% CAGR means the market is growing from a current TAM of about 500M$ to over 4B$ in 2025. One thing that’s really interesting is the expansion of the photonics market into these new fields in the next few years. While in 2019 90% of the photonics market served data center applications (the other 10% is for long haul), in 2025 optical I/O’s will account for over a third of the photonics market TAM. The other applications making an impact include AI, quantum, lidar (which will move into high-volume manufacturing in 2024) and medical sensors (hitting high-volume in 2023). For its part, Soitec is strengthening its portfolio with 8” and 12” large product coverage, new product sampling engaged, and extended features including newer engineered layers and RF immunity. Advanced Silicon Photonic Solutions Leverage SOI Technology – Eleonore Hardy, Business Development Manager, Silicon Photonics, CEA-Leti [caption id="attachment_28769" align="alignright" width="358"] (Courtesy: Leti SOI Consortium)[/caption] Leti helps companies make photonics products they can bring to volume foundries, explained Hardy. (btw, they’re presenting 21 (!) papers – including 5 invited – at PhotonicsWest 2020. Read about that here). You want to do integrated photonics to bring down costs, reduce power consumption, and scale (for higher volumes and reduced footprint). There are essentially three substrate choices: InP, SiN or SOI. SOI uses CMOS processes, so it’s low-cost and can be used in high-density photonic integrated circuits. What about the laser? Leti has developed III-V on silicon bonding, so you can have the laser on 4” III-V with a 300mm CMOS process (this is what Intel’s doing). They’re moving to 300mm wafers, 3D and advanced packaging. While communications is the big application realm, Leti is also applying photonics in automotive, medical, environment and computing. In the computing realm she gave the example of the European QuantERA SQUARE (Silicon Photonics for Quantum Fibre Networks) project for which Leti is doing the quantum emitter for absolute security and computing, wherein the transceiver/receiver for quantum cryptography integrates a hybrid III-V on silicon pump laser. Other examples of their work include miniature, low-cost and agile lidar for automotive and industrial applications (they’re working on a beam-steering emitter for an optical phased array). GlobalFoundries Silicon Photonics Solutions for Wired Infrastructure – Anthony Yu, VP, GF [caption id="attachment_28770" align="alignleft" width="684"] (Courtesy: GlobalFoundries SOI Consortium)[/caption] GF is giving their photonics business a big push. Optical interconnects are the future, said Yu, so they’re putting a lot of money into it. With data streaming multiplying by 3x/year and a current foundry TAM of $63 billion, the opportunity is huge. Fab 10 in Fishkill runs their 90WG process on 300mm wafers. A new process, 45CLO (also on 300mm) for O and C bands is going into the Malta fab. A big focus here are optical transceivers that convert RF signals to light. They see RF on SOI in a monolithic solution is needed to serve 100Gbs applications. They’re also moving to co-packaging optics: the packing technology will surround it with photonic chiplets. Customers have indicated that pulling the signals off the chips is limited by power, so they’ve worked hard on the fiber attach with MEMS and packaging technology for co-packaging. GF relies on substrate providers for high-quality SOI, and they have a world-class development team, he concluded. Integrated Electro-Photonics Design Platform – A multi-physics, multi-fabrics system design solution – Scott Li, Sr. AE Manager of Custom IC Platform, Cadence [caption id="attachment_28771" align="alignright" width="374"] (Courtesy: Cadence SOI Consortium)[/caption] This talk focused on photonics design challenges and solutions – including the CurvyCore™-based PDK for waveguide creation modal properties calculation that Cadence will soon be announcing. It’s a math-based engine that generates complex curvy shapes to support photonics. The first design challenges, said Li, are at the circuit level: how to do the schematics. The detailing tools, timesteps management and circuit simulation need to give the user the best performance. Cadence is working in close collaboration with a company called Lumericable on this. The next set of design challenges come at layout – especially generating curvilinear layout for any shape so that there are no gaps in connections. This is where CurvyCore comes in, fully automating layout and making it easy to modify. This includes place route, DRC and LVS for curvy shapes. The final challenge is at the system level. There is work to do here, but Cadence is collaborating closely on solutions with key partners. The ultimate goal is for photonics layout and editing to be available with all the features designers get in electronics editing. Silicon Photonics for High Volume and High Performance Optical Interconnects Applications – Thierry Pinguet, Technical Leader Engineering, Cisco /Luxtera [caption id="attachment_28772" align="alignleft" width="396"] (Courtesy: Cisco/Luxtera SOI Consortium)[/caption] Over the last decade there’s been steady growth in optical high speed interconnect solutions, mainly driven by HPC, enterprise, and especially the hyperscale datacenter. The largest volumes are for intra datacenter interconnect (between servers). Now mobile applications for backhaul are also driving volume for high speed optical interconnect for 5G network implementation. ASICs and photonics are getting closer as the industry moves to put them in the same package. But everybody does silicon photonics differently (even within Cisco). Luxtera tries to use the same infrastructure as electronics, but patterning is still a challenge: it’s not 90o “Manhattan” style. The wafers are no problem – they work with leading wafer suppliers like Soitec and SEH. They have explored a “double SOI” substrate (like a mirror), which showed large insertion loss improvements in grating couplers . For the electronics and the laser (MEMS), they do a micropackage, although at one point they also did monolithic integration. For better performance, they’re moving to TSVs. A hot topic is ASIC and photonics co-packaging. You can use optical tiles, but then the light is remote, like a power supply. No matter how you do it, though, the bottom line is that silicon photonics is the only way forward for the data center. PH18: World’s First Open Commercial Silicon Photonics Process and PDK from TowerJazz – Masanobu Kumazaki, Engineer, TowerJazz. This presentation was given in Japanese without translation into English, and is not available on the consortium website. But the slides showed at the event indicated that their PH18 is the world’s first open commercial silicon photonics offering. For optical transceiver components, silicon photonics provides another opportunity for a specialty foundry. It is a high-growth market. The TowerJazz offering is 220nm SOI, and uses standard EDA tools from Synopsys, Cadence and Mentor for design flow.

The SOI Consortium’s Japan Symposium this past fall covered a wide array of topics over two days. The first day was devoted to IP and products for RF and ultra-low-power (ULP) on SOI. The second day covered high voltage and photonics. It will take several posts to summarize all the presentations. In this post, we’ll cover presentations related to 5G. In the next posts we’ll cover IoT/ultra-low-power/automotive and photonics. (BTW, if your company is a member of the SOI Consortium, you can now access most of these presentations on our website.) The Japan SOI Symposium was organized for the 4th time at the Yokohama Landmark Tower (from which there was a fabulous view of Mount Fuji). It was a great success, with both days well attended. The event followed the day after (and in the same location as) Silvaco’s SURGE user event, so there were plenty of opportunities for synergy there. (Samsung Foundry talked about their partnership with Silvaco, for example, and their work together on RF and eMRAM on 28nm FD-SOI.) STMicroelectronics [caption id="attachment_27068" align="alignnone" width="589"] From “5G Deployment Driving RF and SOI Technology Opportunity” (Courtesy: ST SOI Consortium)[/caption] As noted in the ST presentation, 5G standards are getting a big push in the Asia-Pacific region, and by China in particular, which is leaping ahead especially in sub-6GHz. It’s a complex standard, noted John Carey, the company’s director of Digital RF for the A-P region, and it’s disruptive, demanding new silicon architectures and technologies. Next year’s premium phones, he said, will include over $30 in RF components, 40mm2 of which will be based on SOI. ST has been working on RF-SOI for over two decades, and offers a range of technologies and foundry services supported by three high-volume fabs. The key benefits with RF-SOI, he explained, stem from RF FEM integration of switches, LNAs and PAs. RF-SOI technologies are here now and are successful in the markets: ST has a long-term technology roadmap and is making continued strategic investments, he concluded. Toshiba [caption id="attachment_27069" align="alignnone" width="410"] From “RF-SOI Switch LNA for Mobile Applications” (Courtesy: Toshiba SOI Consortium)[/caption] Another long-time RF-SOI user is Toshiba, although this marked their first participation in a recent Consortium event. As Group Manager Kazuyuki Uchida talked about RF techology trends, there was lots of note- and picture-taking in the audience. He pointed out that the character and size of the switch LNA modules are particularly important in the move to 5G. They’ve been leveraging their TaRFSOI(tm) process, which he said achieves the industry's lowest insertion loss, for about a decade now. The latest version, TaRF11 will be launching in Q1 of 2020. TaRF10 integrated the LNA with the switch and control circuitry in a single chip. TaRF11 will feature performance improved by about 25%. Incize [caption id="attachment_27065" align="alignnone" width="405"] From “RF Characterization” (Courtesy: Incize and SOI Consortium)[/caption] During the Incize presentation, the company’s CEO Mostafa Emam affirmed that RF-SOI is a very good business opportunity. Incize works with the complete supply chain. For foundries and wafer suppliers, they measure harmonics and output with very high precision, which is especially critical for switches. For the wafer suppliers, it’s predictive. For the foundries, it’s measuring noise for models and PDKs. While RF may be an art, second tier foundries using Incize services are now able to compete with the first tier players, he noted. He sees trap-rich RF-SOI wafers as being especially important for 5G. GlobalFoundries [caption id="attachment_27064" align="alignnone" width="599"] From “RF Reliability for SOI CMOS Si-based Power Amplifier for 5G applications” (Courtesy: GlobalFoundries SOI Consortium)[/caption] The focus of the GlobalFoundries talk was reliability in RF processes. In 5G, you need technologies that are viable for both mmWave and sub-6GHz across handsets, wifi and automotive, noted Purushothaman Srinivasan (who goes by SP and is a senior member of the company’s technical staff). In SOI, you can stack FETs (which you can’t do in bulk) for PAs, which is a big advantage in mmWave. However, delivering scalable, linear, efficient and reliable RF power technology is more challenging than digital, and requires a holistic, collaborative approach that includes the foundry, the customers and the test equipment suppliers. GF has used its RelXpert simulation tool on aging simulations and lifetime predictions for both their 22FDX and 45RFSOI processes. They have observed good RF model-to-hardware correlation, and have built Safe Operating Maps that provide guidance to RF designs. This first-in-industry RF reliability evaluation provides “highly differentiated” solutions for GF. Silvaco [caption id="attachment_27066" align="alignnone" width="606"] From “RFSOI TCAD Solution” (Courtesy: Silvaco and SOI Consortium)[/caption] Silvaco is a leading EDA provider of software tools used for process and device development and for analog/mixed-signal, power IC and memory design. Their presentation began with a review of recent updates to their TCAD simulation framework, including the TCAD design flow, Victory ProcessTM simulation for speeding up 2D/3D process simulations, and Victory DeviceTM simulation. Under Silvaco’s DTCO – Design Technology Co-Optimization – semiconductor physics are connected to circuit design, recognizing that each technology has specific requirements that need to be taken into account at every stage of the flow. Applications Engineer Sun Tao then continued by showing useful TCAD simulations and analysis of SOI for RF applications. In trap-rich substrate simulations, for example, the Silvaco tools can predict the harmonic balance from the active device, device biasing and substrate, all of which can be co-optimized using Victory Process and Device. SITRI [caption id="attachment_27067" align="alignnone" width="305"] From “NB IoT FEM based on SOI” (Courtesy: SITRI SOI Consortium)[/caption] Shanghai Industrial μTechnology Research Institute – aka SITRI – is an international innovation center, focused on globally accelerating the innovation and commercialization of “More than Moore” technologies to power IoT. SITRI Director Wenwei Yang’s talk focused on their narrowband front-end module for IoT (NB IoT FEM). NB-IoT is especially meant to handle small amounts of data from remote places over long periods. There are a lot of players in this market, so taking a “good-enough” approach to performance wherein cost is primordial is key. SITRI’s low-cost NB-IoT FEM integrates everything on a single chip, including the power amplifier (PA) and integrated passive devices (IPD), so packaging costs are low. Putting it on SOI (either trap-rich or high-resistivity) gives them better isolation and simplifies integration. ~ ~ ~ Our next post will continue our coverage of the Japan Symposium. Note: 2019 marks a decade of SOI Consortium events – yes, our first one was in 2009! Because a lot of the presentations in the past were so forward-looking, many of them are still of great interest today. Currently the presentations from 2015 through to the beginning of 2019 are available freely to everyone – and are well worth perusing.

The SOI Consortium’s next annual event in Japan takes place on the 30th and 31st of October in Yokohama. Both days of the SOI Design Symposium will take place in the Yokohama Landmark Tower. The event is complimentary, however pre-registration is required – just follow the link here. Rest assured that in addition to the excellent program, the agenda provides ample time for networking.Wednesday, October 30 -- RF and ULP on SOI: IP ProductsOctober 30th showcases industry leaders with ULP IoT applications by NXP, and opportunities in the RF space by STMicroelectronics and Toshiba. The strong development of the design and EDA platform is discussed by ARM, Silvaco, Attopsemi and Dolphin. GlobalFoundries will present on their predictive reliability platform for RF, while Incize discusses the criticality of RF characterization and Secure-IC addresses to important topic of IC security.The day finishes with an overview of the SOI ecosystem by the SOI Industry Consortium. (See the full agenda here.)Thursday, October 31st -- SOI Enabling Photonics and Power InnovationWe start the day with two keynotes on High Voltage SOI electronics for automotive by NXP followed by Soitec on engineered substrate solutions. The Silvaco overview on RF modeling and SOI NB-IoT by SITRI promises to be very interesting. Then the day will offer a deep dive into Photonics touching applications with Cisco, foundry offerings with TowerJazz and GlobalFoundries, EDA with Cadence, and advanced SOI Photonic solutions by Leti-CEA. An ecosystem and market outlook by Soitec wraps-up the day. (See the full agenda here.)We look forward to seeing you there!

The 45th (yes!) IEEE SOI Conference takes place 14-17 October 2019 in San Jose. Now called S3S –since it also covers 3D and subthreshold – it’s a networking event par excellence: a unique opportunity to meet firsthand the movers and shakers in the SOI ecosystem and the giants of R D. As always, it has a strong technical program you won’t want to miss. Plus this year there’s a full-day short course dedicated to FD-SOI design, and half-day tutorial on RF design. Get all the details and registration info at http://s3sconference.org/.The SOI Consortium’s own Executive Co-director Jon Cheek of NXP is one of the keynoters. In fact the consortium membership is extremely present at this event, with over half our member organizations having a hand in it. There’s a plenary talk by GF’s CTO/VP Subramani Kengeri, keynotes by ST Fellow Andreia Cathelin and NXP Fellow Rob Cosaro, and invited talks from Arm, Samsung and Dolphin Design, for example. And this year’s General Chair is Incize CEO Mostafa Emam. Focus Sessions #12 and 13 are all about FDSOI Platforms and Products, with invited speakers from Renesas, NXP, ST, ARM, GF, Huali and Dolphin Design, while focus Session #2 is all about RF-SOI. Here’s the agenda for the FD-SOI Design short course (which takes place on Thursday, 17 October):Short Course Opening and Welcome Philippe Flatresse, Business Development Marketing Director, Dolphin DesignGLOBALFOUNDRIES 22FDXTM Technology and Body Bias Compensation to Enable New Design Optimization Strategies Joerg Winkler, Fellow Design Engineer, GLOBALFOUNDRIESEmbedded Flash Memory Technologies and Applications in Advanced Nodes Memories Koji Nii, Vice President, Global Marketing Sales, Floadia CorporationEnabling the Adaptive Body Bias in Modern IoT Applications Vincent Huard, CTO, Dolphin DesignSoC Design Realization with Adaptive Body Bias Kripa Venkatachalam, IC Design Practice Director, Mentor Graphics Didier Roland, Application Engineers Manager, Mentor GraphicsAnalog Design Techniques for Microprocessors in FD-SOI: Power-Management, PVT Monitoring and Data Conversion Edevaldo Pereira Da Silva Junior, Senior Principal Engineer, NXP Semiconductors MPU/MCU R DLow Power Solutions for SoC Architectures Antonio Pullini, Senior Hardware Designer, GreenWaves TechnologiesSOI to RF Sidina Wane, CEO, eV-technologiesIf you know the way to San Jose, you'll want to be at S3S 2019, for sure!

Why FD-SOI? What can you do with it that you couldn’t do before? That was the big question from IHS Markit’s Matthew Short that kicked off the first panel discussion at the SOI Consortium’s Silicon Valley Symposium. And there were some great answers.VeriSilicon, Analog Bits and Silicon Catalyst were among the consortium members with stands at the SOI Symposium, Silicon Valley 2019.Here in this final part of our coverage of the event, we’ll detail who said what in the two panel discussions, as well as the presentations by Leti, Intento Design the SOI Consortium’s IP/EDA roundup.If you missed the previous two installments of our coverage, you can catch up on the rest of the presentations in part 1 (NXP, Samsung more) here and part 2 here (Synaptics, GlobalFoundries more). Almost all of the presentations are now freely available under "events" on the consortium website - or just click here to get them.How FD-SOI Changes What You Can DoThe presentation by Matthew Short, Sr. Director of IoT Technology at IHS Markit, was not specific to SOI, but it sure did lay out out the market opportunities. Entitled IoT, 5G, ADAS and AI Market, it’s available on our website. Matt spent most of his career in chip design at NXP/Freescale, so he really has an engineer’s perspective on where this all is going. At IHS Markit, they define IoT as anything with an IP address. Over the past year more than 10 billion devices were shipped, and there were more “things” than cellular handsets, so the world has really changed. He outlined the growth drivers, suggested that 5G won’t be a “wow” thing for consumers, and noted there is a lot of debate raging regarding how smart sensors should be (the Tier 1’s want smart).He was then joined on the stage by the participants in the first panel discussion, which looked at product and application drivers. That included: NXP Fellow Rob Cosaro; Tim Dry, Director of Edge Endpoints Marketing at Samsung Foundry; ST biz dev director Roger Forchhammer; CoreAVI biz dev VP Lee Melatti; Nokia VP Michael Reiha; and Analog Bits EVP Mahesh Tirupattur.First Short asked why customers wanted more integrated solutions. For CoreAvi, it’s about safety, for ST in automotive it’s about security, for Analog Bits, it’s about integrating more analog, for Nokia it’s just a necessity.Then he asked Why FD-SOI? What can you do that you couldn’t do before? For ST, which is doing MCUs for automotive, it’s about energy efficiency, speed, the density of non-volatile memory and the robustness of the technology. For NXP, it’s back biasing, low voltage and power numbers never seen before. “FD-SOI really makes a difference in the products we can bring to market,” said Cosaro. For CoreAVI, it’s the long-term power impact. And for Analog Bits, “Customers see huge benefits,” said Tirupattur, for cost sensitive applications. He has customers selling their technology in high volumes in FD-SOI. What about edge vs. cloud? For Nokia, it’s monolithic integration for best-in-class RF, advanced memory, biasing and voltage regulation adding a layer of intelligence. Samsung sees edge as distributed cloud, and CoreAVI sees safety in the edge, because you can’t completely rely on the cloud.Where are the weak points in the FD-SOI ecosystem? For Samsung, more people need to use back biasing. “People need to use the knobs,” said Dry. For Analog Bits, the next step is innovation around back biasing, as many in logic don’t understand the benefits, so the ecosystem needs to promote the value proposition. ST suggests that with more products out there, customers will see the benefits. NXP did “a lot of the heavy lifting” at 28nm – now you need more people using these nodes, not just the cellphone nodes.How will the architecture change? For NXP, it’s all about memory bandwidth. For Samsung, it’s the promise of analog and interconnect. Nokia sees the back-end and heterogeneous integration with FD-SOI and RF enablement. Analog Bits’ Tirupattur said he’s pushing his engineers for even lower power in a still smaller form factor, noting that most analog engineers had been more focused on performance than power, but now that’s changed. For ST, it’s AI/ML throughout automotive, and FD-SOI is beneficial there.Leti the Connected Car Leti's slide 27, SOI Symposium, Silicon Valley 2019Research giant Leti’s presentation was entitled Applications Around the Connected Car. 85% of Leti’s €315M budget comes from R D contracts with its 350 industrial partners. Truly a driving force in FD-SOI, Leti is involved in a dizzying array of projects. For the connected car, they cover (much of it on SOI): high precision smart sensing, embedded processing fusion, new computing paradigms and deep learning, ultra-low power computing nodes framework, ultra-low power connectivity for IoT, energy management and scavenging, and security. They do vision at the edge, 3D technology for smart imagers, and ways to dramatically reduce power. They’ve got a Qbits platform on FD-SOI for AI at the edge, a super low power neural network accelerator, and ULP connectivity. Check out the presentation for lots of details.EDA/IP OverviewSlide 9 from SOI EDA/IP Overview.SOI Consortium Executive Co-Director Jon Cheek gave a quick round-up presentation aggregating various IP and EDA offerings entitled , SOI EDA/IP Overview. It is taken from recent member presentations including Cadence, Silvaco, VeriSilicon, Synopsys and GlobalFoundries, giving you an idea of how dynamic the ecosystem has become.Automating Analog While the logic side of the design equation has long had robust automation tools, some consider the analog side as sort of black magic. New consortium member Intento Design aims to fix that. Here at ASN we covered their work with ST briefly a few months ago here. At the SOI Symposium, the company’s CEO Dr. Ramy ISKANDER presented their solution in ID-XploreTM: A Disruptive EDA for Emerging FDSOI Applications. Intento, a partner in GlobalFoundries FDXcelerator program, has cognitive software for first-time right analog design. It determines the appropriate static and dynamic body biasing ranges to meet PVTB (Process/Voltage/Temperature/Body Bias), and is fully integrated into the Cadence Environment. They produced multiple correct-by-construction FD-SOI designs, and the total time spent to generate eight candidates FD-SOI designs took less than a day. The Tools Are in the BoxThe last panel discussion, entitled Are the Tools in the Box? was moderated by the Consortium’s Jon Cheek. Participants included: VeriSilicon SVP David Jarmon; Arm PDG Marketing VP Kelvin Low; NXP’s Stefano Pietri, Technical Director of the company’s Microcontrollers Analog Design Team; Jamie Schaeffer, who’s GF’s Sr. Product Offering Manager for 22FDX and 12FDX; and Cadence Strategic Alliances Director Jonathan Smith. 2nd panel discussion, SOI Symposium, Silicon Valley 2019Yes, the tools are in the box. Smith of Cadence said they’re providing them, and NXP’s Pietro said that they’re very well positioned in his specialty, analog. VeriSilicon has IP, and anything they don’t have in house they’ll license. So why be afraid of body biasing? NXP has proof by example – they see such huge cost advantages that they try to leverage it as much as possible. GF’s doing training, since each area (automotive, IoT, etc.) has different needs. Some VeriSilicon customers already see such substantial benefits from FD-SOI that they’re not bothering to do biasing. Cadence points out that the Arm POP announcement is huge, and Arm’s Low wondered if the SOI Consortium could do an IP portal? “Our sales departments need to explain the advantages to our customers!” said NXP’s Pietro.From the audience, NXP VP longtime FD-SOI proponent Ron Martino (who, btw, wrote some great articles for ASN when they first got into FD-SOI – read them here), asked why designers think FD-SOI means a lot of corners? How do we convince the industry that FD-SOI simplifies design? Cadence is working with GF, responded Smith, and will have some big new at Arm’s TechCon this fall. “We need more training and marketing to show it’s not scary," he added. For GF, the corners don’t get more complicated, and they’re working with Dolphin Integration on getting them covered early in the planning. Ease of access to IP will help, per Arm. And in a great concluding remark, VeriSilicon’s Jarmon said, “The craft is being automated. The more we work together, the greater success of FD-SOI.”

Key takeaway #2: If you need a Goldilocks process node – where you'll get just the right balance between active power, unit cost and investment – look to FD-SOI. And, btw, the IP landscape has improved dramatically. Those were just some of the great points made by Huibert Verhoeven (shown above), GM/SVP of Synaptics' IoT Division in his talk at the recent SOI Symposium in Silicon Valley.BTW, if you missed part 1 of our coverage --Silicon Valley SOI Symposium a Huge Success. Key Takeaways (Part 1) Here. – you’ll want to be sure to read it, too. Almost all of the presentations are now posted on our website – click here to access them.In this post here, we’ll cover presentations by Synaptics, GlobalFoundries, STMicroelectronics, Anokiwave and Dolphin Integration. It was a really full, day, so be sure to stay turned for Part 3 of our coverage to follow shortly: it will highlight the remaining presentations and panel discussions.Synaptics: Smart Home at the EdgeSynaptics’ Verhoeven’s presentation Revolutionizing User Experience Through Secure Neural Network Acceleration at the Edge was about Smart Home and using SOI. Synaptics is a human interface (HMI) company that’s been doing neural networks since 1986. They’ve always been on the leading edge, from their first shipment of PC touchpads to becoming a dominant force in all things HMI today: they now ship over a billion units annually. Synaptics slides 15 16 from the SOI Symposium, Silicon Valley 2019.They currently have SOI products shipping with dedicated neural networks for voice, he said. European [privacy] regulations have played a part in driving their use of SOI, as have challenges regarding power and heat. Things are getting smarter at the edge. For example, not only do users want their coffee machine to offer the usual morning espresso, Synaptics says that the next step is for your coffee machine to recognize you’re looking extra tired and ask if you might want a double?! For them Smart Home and multi-modal applications are the primary area of interest, as well as some automotive. Although their biggest customers have resources, others need guidance. Voice is a critical component, but now you also need video and display.Why SOI? Their HMI vision requires low power, significant computation and dedicated neural network hardware, explained Verhoeven, so FD-SOI with RF meets their needs. “22nm SOI is a Goldilocks IoT Process Node,” he proclaimed. It gets the combination of active power, unit cost and investment just right. What’s more, he said, “The IP landscape has improved dramatically. Our choice of SOI was not an accident.” Be on the lookout for more products leveraging FD-SOI over the next six months, he concluded. At this point on SOI, they’ve got 1 TOPS products with dedicated NPU for speakers, soundbars, Wi-Fi mesh, appliances, STBs and smart displays. These products have voice and sensor real-time (RT) AI. Next up is 4 TOPS on SOI with dedicated NPU, targeting STBs and smart displays with voice, video, imaging and RT AI. GF: World-Changing OppsGlobalFoundries slides 6 7 from the SOI Symposium 2019, Silicon Valley.“Our clients are at the forefront of changing the world,” declared Mark Granger, VP of the Automotive Product Line at GlobalFoundries. His presentation, Capturing High Growth Market Opportunities with SOI, detailed how mobility, automotive and IoT are the growth markets for SOI. So not unsurprisingly, GF’s 22nm FD-SOI technology, 22FDX, is seeing particular traction in mobile, edge, wearables and automotive. They’ve got twice as many tape-outs this year as they did a year ago, he noted. GF’s SOI portfolio includes 22FDX®, 45RFSOI and 8SW/7SW RF SOI for 5G/mobility; 22FDX for automotive (fully qualified for automotive Grade 2, with Grade 1 on the way); and 22FDX, 130RFSOI and 8SW/7SW RF SOI for IoT. GF has announced a stream of good news recently:with Dolphin Integration they’re delivering differentiated FD-SOI Adaptive Body Bias Solutions for 5G, IoT and automotive applications;they’ve crossed the billion-dollar design win threshold with 8SW RF SOI technology; they’ve collaborated with Synopsys to develop the industry’s first Automotive Grade 1 IP for their 22FDX process;and they worked with Rambus on the delivery of High-Speed SerDes on 22FDX® for communications and 5G applications.You might have heard about the Dolphin Integration news, as we covered it recently here at ASN (if not, be sure to read it here). Dolphin’s IP and methodology solutions address energy efficiency challenges. Automated transistor body biasing adjustment can achieve up to 7x energy efficiency with power supply as low as 0.4V on 22FDX designs. At the Silicon Valley event, Dolphin Integration CEO Philippe Berger provided additional information in his talk, FD-SOI IP Platform for Energy-Efficient IoT SoC. Dolphin Integration slides 5 6 from the SOI Symposium 2019, Silicon Valley.In another GF-related talk, Nitin Jain, the CTO of longtime GF RF-SOI customer Anokiwave presented Unleashing the mmWave Phase Array Using SOI for 5G Satcom. Anokiwave is a fabless semi IC company (you’ll find a good technical discussion of mmWave phase array written by their Chief Architect here). They do active antennas (aka phased array), something the military’s done for a long time, but now Anokiwave is bringing it to new markets and applications including radar, satcom and 5G. What they’ve been able to do is planarize the active antennas. They use GF’s 45RFSOI process technology for phased array systems because of the cost, performance, scalability and system enhancements it enables. 45RFSOI, he explained, is ideal for beam-forming FEMs (including the switches, LNAs and PAs). The move to 5G/mmWave is going to require a lot of antennas, so these Anokiwave ICs are headed to high volumes, concluded Jain.Stellar by STAs Roger Forchhammer, Director of Business Development at STMicroelectronics pointed out in his presentation, Automotive FD-SOI Microcontrollers with Embedded PCM, ST pioneered FD-SOI (and that was almost a decade ago, btw). Then in February 2019, they announced a world first: they’d begun sampling 28nm FD-SOI microcontrollers (MCUs) with embedded non-volatile memory (eNVM) based on embedded Phase-Change Memory (ePCM) to 10 alpha customers. These MCUs target powertrain systems, advanced and secure gateways, safety/ADAS applications, and vehicle electrification.STMicroelectronics slides 9 10 from the SOI Symposium 2019, Silicon Valley.(In case you want technical details, the breakthrough ePCM eNVM was first presented at IEDM in December 2018 – you can get the presentation that accompanied the paper, Truly Innovative 28nm FDSOI Technology for Automotive Microcontroller Applications embedding 16MB Phase Change Memory, from the ST website.)In his Silicon Valley presentation, Forchhammer said they’re now doing Stellar, a whole family of automotive products on FD-SOI. To do it, they’d taken an existing device and moved it to 28nm FD-SOI with ePCM, which they manufacture at their fab in Crolles, France. A major advantage for automotive he cites is that in software updates it’s bit-level programmable. “ST is fully behind FD-SOI,” he concluded, adding that we’re see more automotive as well as IoT products coming soon. Well folks, that’s all for this post. We’ll finish up our coverage of the SOI Consortium’s 2019 Silicon Valley Symposium in the next ASN post (there was so much to cover!). So please stay tuned.

Takeaway #1: As NXP VP Ron Martino noted in his opening keynote at the recent SOI Symposium in San Jose, FD-SOI is the technology platform for enabling edge computing, and ultra-low power is the sweet spot. Organized by the SOI Consortium with support from our members, the recent SOI Symposium in Silicon Valley was an enormous success. Close to 300 decision makers signed up – more than double what we saw just a couple years ago. Attendees spanned the ecosystem: from end-users to design to foundries and right up to the investment community. The presentations and panel discussions were absolutely terrific, and almost all are now freely available - click here to get them.The focus was heavily on FD-SOI this time, but some very interesting RF-SOI talks were given as well. This was a day packed with presentations by players from across the SOI ecosystem. In this post, we’ll only cover a few. But the others will follow quickly, so watch this page. And now without further ado, let’s dive in.NXP: In the Sweet SpotNXP VP Ron Martino presenting at the 2019 SOI Symposium in San Jose.NXP is designing FD-SOI into many new products, said Martino, GM of the i.MX Processor Application Product Line. There’s a new wave of products – generically you could call them IoT but in fact they’re found throughout the industry. It’s about interacting with the cloud, so edge processing is critical. His presentation, Embedded Processors for Future Applications, is now freely available for downloading from our website.The new i.MX7ULP is a great example of ULP in the sweet spot. From a design standpoint, it leverages IP, power optimization, and what he described as “starter biasing”. That gets them the long battery life with 2D 3D graphics they need for wearables and portables in consumer and industrial applications.NXP slide 10, SOI Symposium, San Jose '19 (Courtesy: NXP)Having deepened their expertise in biasing, NXP has now moved on to “advanced biasing” for the next generation of products. For example, the i.MX RT ULP (real-time, ultra-low-power) series are “cross-over” processors, which Martino says are the “new normal”. They deal with a high number of sensor inputs. The i.MX RT 1100 MCUs, which have been qualified for automotive and industrial applications, are breaking the gigahertz performance barrier with a low-power, 28nm FD-SOI process.Another new product leveraging advanced biasing is the i.MX RT 600. They’ve done hardware acceleration on specific functions and optimized around visionand voice integration at low cost and power.As shown at Embedded World '19, automotive app for NXP'x i.MX 8, which is on 28nm FD-SOI. (Courtesy: NXP)Likewise for the i.MX 8 and 8X subsystems for automotive and industrial applications. At Embedded World, they showed it driving advanced OLED screens, cameras (for parking, for example), V2X, audio, user monitoring (like driver pupil tracking), and integration into the windshield in a heads-up system. This is the high end of the capability of 28nm FD-SOI, he said. It’s a 6 CPU core system with multiple operating systems, about which he said: “It’s the dashboard...it’s amazing.”BTW, in another presentation, CoreAVI, which builds avionics, automotive and industrial products on NXP’s i.MX 8, addressed safety. You can get that here.FD-SOI enables a scalable solution for real-time and general compute with the lowest leakage memory, the best dynamic and static power, Martino concluded. NXP’s leadership in body biasing is enabling edge compute, and we can expect to see more content coming soon.In another NXP presentation later in the day, Stefano Pietri, Technical Director of the company’s Microcontrollers Analog Design Team caught a lot of people’s attention. A wave of cameras went up to capture each of his slides in Analog Techniques for Low Power, High Performance MPU in FD-SOI – but you can get the whole thing now from our website. It’s a very technical presentation, in which he details the many ways FD-SOI makes the analog team’s job easier, enabling them to get performance not available from bulk technologies. They developed a lot of in-house expertise and IP (see slide 16 for a catalog of the IP).Samsung: Enabling LP Endpoint ProductsTim Dry, Samsung Foundry Director of Edge Endpoint, SOI Symposium, San Jose '19Tim Dry, Director of Foundry Marketing: Edge and End Point presented Samsung’s FDS with MRAM: Enabling Today’s Innovative Low Power Endpoint Products. In a telling first, Samsung has made this presentation available on our website.FD-SOI covers the wide range of requirements for intelligent IoT, he explained: from high to low processing loads; and active to dormant processing duty cycles. That includes chips that will last for ten years, and need to be able to wake up fast and kick right into high performance. These products are 50% analog, and packaging is part of the solution (especially for the RF component).Samsung has been shipping 28nm FD-SOI (which they call 28FDS) since 2015, first in IoT/wearables, then in automotive/industrial and consumer. Yields are fully mature. In March 2019, they announced mass production of eMRAM on 28FDS. It’s a BEOL process, adding only 3 masks. It cuts chip-level power by 65% and RF power by 76% over 40nm bulk with external memory. Beyond the fact that it's 1000x faster than eFlash, eMRAM also has other advantages that make it especially good for over-the-air updates, for example.Samsung Foundry FD-SOI IP slide, SOI Symposium, San Jose '19 (Source: Samsung Foundry Keynote at SOI Symposium 2019, USA)Samsung also has RF and 5G mmWave products shipping in 28FDS. The company has a fantastic ecosystem of partners helping here, said Dry. In AI at the endpoint, they’re shipping IoT products for video surveillance cameras: some are high speed, but some are also low speed – it depends on the detection use case. And most importantly for the design ecosystem, the IP is all ready.Next up for Samsung is 18FDS, which will ship this year with RF, then in 2020 with eMRAM. 18FDS, Dry said, is optimized for power reduction. Compared to 28FDS, it’s got 55% lower power consumption, 25% less area and 17% better performance at the same power. You’ll hear more about it as well as their design services if you’re at the Samsung Foundry Forum in May (registration info here).ARM’s Biased ViewsKelvin Low, VP of Marketing for Arm’s Physical Design Group (PDG) gave a presentation entitled Biased Views on the Industry’s Broadest FDSOI Physical IP Solution. By way of background, Arm and Samsung Foundry recently announced a comprehensive, foundry-sponsored physical IP platform, including an eMRAM compiler for 18FDS. In case you missed it, at the time Arm Senior Product Marketing Manager Umang Doshi described the offering in an Arm Community / Developer physical IP blog, which Arm graciously agreed to share with ASN readers. Slide 9 from Arm's presentation, Silicon Valley SOI Symposium 2019.At the SOI Symposium, Low emphasized to the audience that Arm now has the broadest range of FD-SOI + IP solutions. It addresses mobile, consumer, IoT, automotive and AI/ML. There are 18FDS POP (processor optimized pipe) packages for Arm Cortex-A55, Cortex-R52 and Cortex-M33 processors. IP integrates biasing and a number of standard PVTs (corners). And since the Samsung platform is foundry-sponsored, it’s free.Slides 6 and 11 from Arm's presentation, Silicon Valley SOI Symposium 2019. The goal of POP IP is to enable partners to implement and tapeout Arm cores with the fastest turn-around time and best-in-class PPA while maximizing the benefits of process technology.Arm did a test chip with eMRAM, which they’ve just gotten back. It’s functional (some details are available in slide 14 of their presentation), and the company is now preparing a demo board that they’ll be showing shortly. Watch this page!That's all for this post. The next post -- part 2, covering presentations by Synaptics, GlobalFoundries, STMicroelectronics, Dolphin Integration and Anokiwave -- is now available. Click here to read on.

[caption id="attachment_11914" align="alignright" width="150"] Mark Granger, GlobalFoundries' VP Automotive Product Line Management[/caption] GF's 22FDX® (22nm FD-SOI) offering is on an automotive roll. The technology platform has been certified for several key automotive standards, and GF has announced an exciting new ADAS customer in Arbe Robotics. In addition to sharing info from various press releases and blogs, ASN also had a chance to catch up with Mark Granger, GF's VP for automotive, who provided some great insights. Read on! Taking the Heat When it comes to compliance, automotive industry standards are excruciatingly rigorous. Every part that goes into a car must adhere to the relevant standards: chips are no exception. One such standard is the AEC – Q100, a “Failure Mechanism Based Stress Test Qualification For Integrated Circuits”. The AEC – aka the Automotive Electronics Council – handles those testing standards and certification. Grade 2 means a technology is certified for the -40°C to +105°C ambient operating temperature range. To achieve Grade 2 certification, devices have to successfully withstand reliability stress tests for an extended period of time over the specified temperature range. GF recently announced that 22FDX has been AEC Q100 Grade 2 certified (press release here). However Granger adds that for their customers, they've added additional headroom that takes them to 125°C. They're now working on Grade 1 certification, he says, which means the devices are certified to handle junction temperatures up to 125°C (and there again, GF has added additional headroom that takes them to 150°C). That should be done by the end of 2018. The ability you get with FD-SOI to tune the transistors using body biasing is really beneficial here, he says. For GF, the 22FDX qualifications exemplifies their commitment to providing high-performance, high-quality technology solutions for the automotive industry. The automotive industry is driven by a “zero excursions – zero defects” mindset, says Granger, and that drives the foundry, too. SOI has been used for decades across industries where heat and electromagnetic radiation are challenges, bringing soft error rates (SER) down by orders of magnitude, notes Granger. (SOI, btw, essentially eliminates what are known as Single Event Upsets (SEU) caused by latch-up, which in turn brings down SER.) That in turn, ties into the FIT (failure in time) rate – and that's part of the ISO 26262 “Road vehicles – Functional safety” standard – where 22FDX is also certified. As a part of GF's AutoPro™ platform, 22FDX allows customers to easily migrate their automotive microcontrollers and ASSPs to a more advanced technology, while leveraging the significant area, performance and energy efficiency benefits over competing technologies. Moreover, the optimized platform offers high performance RF and mmWave capabilities for automotive radar applications and supports implementation of logic, Flash, non-volatile memory (NVM) in MCUs and high voltage devices to meet the unique requirements of in-vehicle ICs. GF's Fab 1 in Dresden, Germany (which is where they do 22FDX) also has achieved ISO-9001/IATF-16949 certification, which demonstrates that it is capable of meeting the stringent and evolving needs of the automotive industry. (IATF is the International Automotive Task Force. 16949 is a Quality Management System (QMS) certification specifically for the automotive sector.) Granger wrote a really informative blog on the GF website – you can read it here. It includes this graphic, indicating where in the car 22FDX-based parts are expected to go. [caption id="attachment_11913" align="alignleft" width="1000"] Here's how GF sees the applications for 22FDX and other chip technologies in automotive applications. (Courtesy: GlobalFoundries)[/caption] On Radar GF recently announced that Arbe Robotics selected 22FDX® as the process technology for its groundbreaking patented imaging radar. Arbe aims to achieve fully automated system capabilities and enable safer driving experiences for autonomous vehicles (read the press release here). As the first company to demonstrate ultra-high-resolution at a wide field of view, Arbe Robotics’ radar technology can detect pedestrians and obstacles at a range of 300 meters, in any weather and lighting conditions. The processor creates a full 3D shape of the objects and their velocity, and classifies targets using their radar signature. As Granger noted in his blog, “Radar is one of several sensor types used to detect objects near a vehicle, to enable features like adaptive cruise control. Lidar is another. It uses pulsed lasers to determine distance from an object by measuring the time it takes for the light to reflect back. However, lidar is currently expensive and is affected by weather conditions. Radar is less expensive, and higher-resolution radars promise to compete well with lidar in automotive applications, thereby enabling lower-priced vehicles to enjoy greater ADAS capabilities. 22FDX-based radar sensors can provide higher resolutions and less latency than current radar sensors at a very low total system cost.” While they may be complementary at first, there is a battle brewing between high-resolution radar and lidar, Granger told ASN. Putting their solution on 22FDX enables Arbe to achieve a 77 GHz mmWave radar and compete cost-effectively with lidar. “They wanted the best,” says Granger. 22FDX can achieve the requisite Ft and Fmax figures of merit. And with transistor stacking, they can also integrate the power amplifier (PA) on a single device. With the low inherent capacitance of the PA in 22FDX, you can get the high power output you need for mmWave but with low power consumption. GF blogger Dave Lammers has also written a great piece about the Arbe solution (you should read it: here's the link). “The company said its advanced technology allows the detection of small targets, such as a human or a bike even if they are somewhat masked by a large object such as a truck,” he writes. “The imaging radar can determine whether objects are moving, and in what direction, and alert the car in real-time about a risk. “While other car sensors can fail when it is raining, if there’s fog, and due to blinding lights such as a sudden reflection, Arbe’s radar is completely oblivious to all those factors. The custom designed radar processor creates a full real-time 4D image of the environment, and classifies targets using their radar signature.” Avi Bauer, Arbe's VP of R D, is now clearly an SOI fan. Lammers quotes him as saying, “With SOI the design is more straightforward, and (voltage) biasing allows you to do things that cannot be done in standard CMOS. For the transmit and receive modules, SOI’s higher resistivity substrate benefits the passive components – inductors and capacitors – and allows good isolation. High Q passives are important. At 22nm, SOI allows better performance overall.” Clearly good things are coming down the road for FD-SOI!