China Silicon Carbide Epitaxial Wafer Task Force Highlights
By Cassie Li, SEMI China
The Compound Semiconductor Materials China Technical Committee Chapter has established the first Silicon Carbide Epitaxial Wafer Task Force after the formation of the North American, European, and Japanese Silicon Carbide International Task Forces, and has participated in the international standardization activities for silicon carbide epitaxy.
As a wide bandgap semiconductor material, 4H-SiC has excellent characteristics such as a wide energy gap, high critical field, and high thermal conductivity, which make it an ideal semiconductor material for high temperature, high frequency, and high power electronic devices in the next 50 years. 4H-SiC power devices can effectively improve system efficiency, reduce energy consumption, and enhance system reliability, making them widely applicable in automotive electronics, photovoltaic inverters, UPS, high-speed rail, and other fields. As the basic material of 4H-SiC power devices, 4H-SiC Epi-afers play an irreplaceable role.
Currently, there is no uniform international standard for 4H-SiC Epiwafer. This Specification for 4H-SiC Homoepitaxial Wafer specifies the parameters of 4H-SiC homoepitaxial wafers with a single epitaxial layer grown on an n-type substrate and can provide a reference for epiwafer production and material procurement for upstream and downstream enterprises, promoting the healthy and orderly development of the industry chain.
In October 2022, SEMI Draft Document 6693, Specification for 4H-SiC Homoepitaxial Wafer, led by Epiworld, officially passed Procedural Review and is pending publications.
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March 16, 2023