New Proposal for a Test Method for Quantifying Basal Plane Dislocations in Silicon Carbide by X-ray Topography

By Kevin Nguyen, SEMI

Basal plane dislocations (BPDs) in 4H-SiC substrates are detrimental to the yield and the performance of 4H-SiC-based devices. Thus, there is a need to specify the BPD density of a 4H-SiC substrate material sold to customers for device fabrication.

Document 6870, Test Method for Quantifying Basal Plane Dislocations in 4H-SiC by X-ray Topography, was authorized by the Compound Semiconductor Materials Europe TC Chapter meeting held virtually in November 2021.

X-ray topography, a non-destructive measurement technique, is the suitable method for determining BPDs, but different approaches or measurement parameters may yield varying results. Therefore, the measurement and evaluation parameters will need to be defined to obtain comparable results.

By using a standardized and reliable test method, the quality of the substrate material can be chosen. If the requirement for BPD density is high, the cost of the substrate can be significant reduced, and if BPD density requirement is low, the yield will greatly increase.  

Led by the Fraunhofer Institute for Integrated Systems and Device Technology, this effort is being drafted by the Test Methods Task Force.  Several reputable suppliers and users including Infineon, GlobalWafers, SiCrystal, SK Siltron, SOITEC, and ST Microelectronic have also joined the task force. 

If you would like to participate in the Task Force, please contact Kevin Nguyen at [email protected].

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March 7, 2022