Specification for Dry-Etched Patterned Sapphire Substrates
By Isadora Jin, SEMI China and Fanghu Si, Jing'an Optoelectronics Co., Ltd
SEMI recently published a new standard, SEMI HB12, Specification for Dry-Etched Patterned Sapphire Substrates (DPSS). As the High Brightness Light Emitting Diode (HB-LED) and Patterned Sapphire Substrate (PSS) industry is under rapid development, it is necessary to establish the standard for PSS products, which can provide a clear and common basis to meet the demands of research and development, and production and sale for the LED (Light Emitting Diode) industry. Because the PSS industry belongs to the upstream in the whole LED industry, a sound standard and specification system is beneficial to the downstream of LED industry.
SEMI HB12 specifies the terms, definitions and the specifications of pattern parameters (such as height, width and pitch, etc.,) for dry-etched patterned sapphire substrates. This Standard applies to patterned sapphire substrates for semiconductor GaN epitaxial light-emitting diodes production. Symmetry, in particular, is an innovative parameter specification. The quantity specifications of different defect sizes are also specified in the standard.
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March 5, 2020