200 mm Silicon Carbide Wafer Specification and Marking
By Kevin Nguyen, SEMI
SEMI M55, Specification for Polished Monocrystalline Silicon Carbide Wafers, initially developed in 2004 for 50 mm wafers, has been updated over the years to add specifications for 76.2 mm, 100 mm, and 150 mm wafers. The latest proposal seeks to establish requirements for the 200 mm generation.
Proposed in late 2019 by Tom Barbieri (Wolfspeed) and led by Arnd Weber (Si Crystal), major silicon carbide suppliers and end users including Dupont, Denso, II-VI, Infineon, lpe-epi, Norstel, Norththrop Grumman, and ST Micro have joined the effort. The goal is to come up with a universally accepted specification adopting current technology that meets end users’ requirements.
The SiC Material and Wafer Specification Task Force (TF) has been meeting monthly. Significant progress has been made on physical characteristics (e.g., thickness and tolerance) in the past several months. However, multiple technical issues remain, including edge shape, flatness, orientation, electrical properties, defects, test methods and other parameters.
The TF will be meeting via Web conference every last Thursday of the month from 7:00-8:00 AM Eastern Time until the SEMI Draft Document 6615 is ready for balloting.
Correspondingly, Tom Barbieri has also proposed Document 6604: Revision to SEMI T5-1214, Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers, to include marking for 200 mm silicon carbide. The current version of SEMI T5 covers 200 mm compound semiconductor wafers, however, it does not specifically address silicon carbide.
The initial ballot for SEMI Draft Document 6604 was issued in February 2020. Several technical rejects were received, and the TF will rework SEMI Draft Document 6604A and reballot in the near future.
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June 11, 2020