SiC—Silicon Carbide Webinar #7

SiC—Silicon Carbide Webinar #7: 

SiC Planar and Trench MOSFETs: Design, Fabrication, and Key Applications

Silicon Carbide (SiC) MOSFETs exploit the material’s favorable properties, which allow for highly efficient power devices with reduced form-factor and cooling requirements. Having been commercially introduced in 2011, SiC MOSFETs have gone through several generations of improvements and are currently offered in planar and trench configurations by major semiconductor chip manufacturers. This webinar will provide an impartial overview of planar/trench design and fabrication aspects, highlight their key competitive advantages, and provide an independent overview of what real-world converters require in terms of application-specific performance parameters. Exemplary applications to be discussed include aviation, servo drivers, energy storage, and traction drives.

View other webinars in the SiC Series

• Webinar #1—Silicon Carbide Material Properties, Key Applications, and Fabrication Basics: Making the Transition from Silicon
• Webinar #2—Non-CMOS Compatible SiC Power Device Fabrication in Volume Si Fabs
• Webinar #3—Bidirectional SiC and GaN Switch Technology
• Webinar #4—Understanding SiC Chip Cost, the Impact of Defects, and the Case of Price Parity with Si at the System Level
• Webinar #5—SiC Edge Termination Technology
• Webinar #6—Basal Plane Dislocation Defects and the Impact on Device Performance

Meet the Speaker

View David Levett's Biography

View Victor Veliadis's Biography