Dr. Gary L. Patton is corporate vice president and general manager of the Components Research & the Design Enablement groups in Technology Development at Intel Corporation. Components Research is responsible for ensuring Intel’s long-term process leadership via the enablement of revolutionary processing, device, architecture, and packaging technologies. Design Enablement is charged with delivering the Process Design Kits (PDKs), Test-Chips, Design-Technology Co-Optimization (DTCO), and Foundational IP (FIP) & Embedded Memory Solutions to maximize technology value and meet customer needs and schedules.
Prior to joining Intel, Dr. Patton served as is the Chief Technology Officer and Senior Vice President of Worldwide Research and Development and Design Enablement at GlobalFoundries where he was responsible for the semiconductor technology R&D roadmap, operations, and execution. Prior to that, Dr. Patton was vice president of IBM’s Semiconductor Research and Development Center—a position that he held for eight years where he was responsible for IBM’s semiconductor R&D, design enablement, and technology development alliances.
Dr. Patton is a well-recognized industry leader in semiconductor technology R&D with over 30 years of semiconductor experience. He is a Fellow of the IEEE and recipient of the 2017 IEEE Frederik Philips Award for industry influence and leadership in the development of leading-edge microelectronics technology and collaborative research. In 2016, Dr. Patton was inducted into the VLSI Research Hall of Fame for his contributions to the advancement of the semiconductor industry over several decades. He has co-authored over 70 technical papers, given numerous invited keynote and panel talks at major industry forums, and served on the IEEE Nishizawa Medal and Grove Field Award Committees. He is also serving of the Advisory Board for Rochester Institute of Technology’s Electrical and Microelectronic Engineering department. His work on SiGe HBT technology was featured as the top innovation of 1987 at the 2004 International Electron Device Meetings 50th Anniversary event.
Dr. Patton received his bachelor’s degree in electrical engineering from UCLA and his master’s and Ph.D. degrees in electrical engineering from Stanford University.