Joël Hartmann is Executive Vice President of STMicroelectronics, Digital & Smart Power Technology, and Digital Front-End Manufacturing, and has held this position since February 2012. He managesST’s manufacturing operations in CrollesandRousset, France, Technology and Design Platforms for the Company’s digital products. In December 2018, the scope of his responsibility was extended to the Smart Power Technology R&D team from Agrate. From 1979 to 2000, Hartmann worked at CEA-Leti, a France-based applied-research center. In 2000, he joined STMicroelectronics as Director of the Crolles2 Alliance, the semiconductor manufacturing R&D initiative of STMicroelectronics, NXP, and Freescale Semiconductor. In 2008, Hartmann was promoted to Group Vice President and Director of Advanced CMOS Logic & Derivative Technologies. From 2010to 2012, he had additional responsibilities as a co-leader of the Semiconductor Research and Development Center in Fishkill, NY, within the IBM ISDA Technology Alliance for advanced CMOS process development. Hartmann is a Member of the IEEE Electron Device Society. In 2017, he became a member of the French “Académie des Technologies”.In March 2019, he received the European Semi Award. Hartmann has filed 15 patents on semiconductor technology and devices and authored 10 publications in this field to date. Joël Hartmann was born in Toulon, France, in 1955. He graduated from the Ecole Nationale Supérieure de Physique de Grenoble with a degree in Physics.