Silicon Carbide

Silicon carbide (SiC) has become a cornerstone of next-generation power electronics, driving advancements in electric vehicles, renewable energy, and industrial applications. After several years of rapid capacity expansion, the SiC industry is now entering a new phase focused on optimization, quality, and long-term scalability.This transition reflects a broader realignment across the global semiconductor ecosystem. As new fabs come online and supply chains mature, the industry is prioritizing stability, cost efficiency, and technical excellence over sheer capacity growth. SiC has moved from being a niche technology to a critical enabler of the energy transition, and this maturity demands not only investment in tools and materials, but also in process knowledge, cross-industry standards, and long-term partnerships that can sustain innovation at scale.To understand how this shift is unfolding, SEMI Europe spoke with Dr. Mark Puttock, Senior Director, Technology and Innovation at Entegris. Puttock shared his perspective on the industry’s evolution and how strategic collaboration and process innovation are shaping the next chapter of SiC manufacturing.From Ramp-Up to RefinementThe early growth of SiC manufacturing was driven by surging demand for high-efficiency power devices, particularly in electric vehicles. According to Puttock, that expansion period has given way to a new focus on yield, uniformity, and process control.The industry is entering a stage of maturity where success depends on optimization rather than scale alone. Improving consistency across crystal growth, wafer, and device fabrication is becoming just as important as adding capacity. This refinement phase calls for closer integration between materials science and manufacturing technology to ensure reliability and cost efficiency.A Focus on Process and Materials InnovationAs SiC moves toward high-volume production, challenges related to contamination control, defectivity, and wafer uniformity are taking center stage. Puttock noted that addressing these issues requires collaboration between materials suppliers, equipment manufacturers, and device makers.Efforts across the industry are converging on similar goals: enhancing purity, improving process repeatability, and developing new methods to enable larger wafer formats. Moving from 6-inch to 8-inch SiC wafers, for example, is widely recognized as a key step toward higher throughput and cost efficiency. Puttock emphasized that innovation in materials science and manufacturing technology must go hand in hand to support this scaling trend.Insights from Cross-Industry CollaborationA recent Entegris blog post featuring insights from Volkswagen Group Components and Porsche Consulting explores how SiC adoption is reshaping manufacturing strategies beyond the semiconductor industry. The post also highlights the strategy paper developed by Porsche Consulting in collaboration with Entegris. This joint effort demonstrates the value of aligning semiconductor-grade precision with automotive manufacturing demands. By sharing perspectives across industries, partners can accelerate best-practice adoption and strengthen the overall ecosystem for wide-bandgap technologies.Building a Sustainable FutureSustainability remains an integral part of this optimization phase. SiC devices themselves enable energy efficiency in end applications, but the way they are manufactured is equally important. Optimizing material use, recycling process consumables, and improving chemical delivery efficiency all contribute to a smaller environmental footprint. As production scales, attention to both performance and sustainability will be key to long-term success.Looking ForwardThe transition from expansion to optimization marks a pivotal moment for SiC manufacturing. Industry focus is shifting from building capacity to mastering control, quality, and resource efficiency. Puttock sees the future of SiC as one shaped by deeper digital integration, data-driven process development, and continued collaboration across disciplines. These advancements will help enable more consistent, sustainable, and cost-effective production—laying the foundation for the next generation of high-performance power devices.At the same time, Entegris continues to invest in materials science, contamination control, and advanced process technologies that help its customers overcome the complex challenges of SiC manufacturing. By combining technical expertise with a collaborative approach, the company plays an active role in supporting the industry’s transition toward more efficient and sustainable production.James Lam is Business Development Manager at SEMI Europe.

Silicon carbide (SiC), with its wide band gap and high thermal conductivity, is increasingly favored for semiconductor power applications across several fast-growing industries. Its ability to operate at higher voltages and frequencies enables significant efficiency gains, particularly in e-mobility, where SiC offers key advantages in size, weight, and speed compared to traditional silicon-based power devices.However, as promising as SiC is, the industry still faces critical challenges in scaling to meet growing demand. Key barriers include cost, reliability, and manufacturing capacity, all of which must be addressed for SiC to fully mature.SEMI spoke with Entegris Senior Director - Advanced Technology Engagements, Office of the CTO Mark Puttock, Ph.D., to discuss the challenges of scaling SiC power chip manufacturing from a material supplier’s perspective. Puttock shared insights ahead of his presentation at the Entegris session, Cultivating a Thriving SiC Market: Tackling Key Challenges Across the Value Chain, taking place on November 14, 2024, at SEMICON Europa in Munich, Germany. Don’t miss the opportunity to engage with experts from Entegris and other industry leaders. Registration is now open. SEMI: Global megatrends like environmental crises and AI drive the necessity for SiC power semiconductors. What is the current status? Puttock: The increasing demand for efficient power electronics — fueled by global megatrends such as vehicle electrification, environmental de-carbonization, and the rise of power-hungry AI chips — drives the necessity of wide bandgap semiconductors. SiC offers advantages of weight, size, and speed over traditional silicon (Si) solutions, which are particularly vital in automotive applications 600V and above. However, SiC chip manufacturing has not reached the maturity of silicon-based processing. Greater maturity will help reduce costs, which will accelerate adoption in the market.SEMI: What are the main challenges in scaling SiC?Puttock: Challenges in scaling SiC power chip manufacturing to high volumes are not surprising. That’s because high volume producers have not been operating long enough to resolve early-stage issues. From a material perspective, SiC is more challenging to manage compared to Si. The challenges we identify include:Chemical Mechanical Planarization (CMP): SiC is nearly as hard as diamond and significantly harder than Si, making it challenging to achieve a high removal rate while maintaining both planarity and low defectivity. This step is crucial toward the end of the wafering process and before the epitaxial growth of device layers.Handling: SiC is more brittle than Si, making it more susceptible to damage or breakage.Implantation: SiC is more difficult to implant than Si, requiring higher temperatures and the use of aluminum instead of boron as a P-type implant species. Additionally, it is a significant challenge to achieve a reliable aluminum source with a long and stable lifetime.Thermal Processing for Wafer Growth and Epitaxy Processes: SiC processes run hotter than Si ( 2000° C for wafering, 1500° C for epitaxial growth), demanding resilient chamber parts to achieve good lifetimes.Sustainability: Because SiC is extremely hard, the CMP process requires significant amounts of slurry. Improving slurry recycling and wastewater management continues to be a challenge.On October 29, we will address these issues in our webinar, “Challenges in Scaling SiC Power Chip Manufacturing: A Material Supplier's Perspective” This session will provide valuable insights and considerations for advancing maturity in high-volume SiC power chip manufacturing. SEMI: Can you elaborate on the challenges associated with CMP for SiC wafers? Puttock: SiC wafers are challenging to process, requiring specialized materials and methods compared to traditional silicon. Defects in the SiC wafer crystal during non-optimized CMP processing can propagate into the device epitaxial layers. This leads to yield loss, increased electrical resistance, reduced performance, and wasted power.SiC wafers must be cut, ground, lapped, and polished to create the necessary surface properties before depositing active layers. As the demand for these devices grows, optimizing the CMP process is essential to ensure the desired surface quality and planarity required for device fabrication. For a deeper understanding of these challenges, we recommend downloading our latest white paper, “Solving CMP Challenges in High-Volume SiC Production,” which covers:Achieving maximum smoothness with high removal ratesReducing the total cost of ownership Optimizing CMP slurry and pads for the unique wafer chemistry and topology of SiC wafersSEMI: What do you mean by optimizing slurry for SiC CMP?Puttock: CMP slurry typically consists of abrasive nanoparticle powder dispersed in a chemically reactive solution. The objective is to achieve a smooth, defect-free surface (less than 1 A Ra) with a high removal rate (greater than 7 µm/m).Traditionally, achieving high removal rates and smooth surfaces required two separate slurries. This approach sometimes forced SiC wafer manufacturers to choose a defect-free surface over a faster, more efficient CMP process, depending on their fab capabilities. Today, optimization allows SiC wafer manufacturers to achieve both high polishing capacity and good final surface quality using a single slurry.Additionally, while the slurry is the most critical part of the CMP process, the pad must be compatible with the application. This ensures the desired planarity while also preventing scratches or contamination of the SiC wafer surface. Research shows that optimized thermoplastic polyurethane CMP pads outperform traditional thermoset polyurethane pads. The optimized pads minimize surface damage and enhance removal rates due to their bulk hardness.SEMI: What are the future challenges for SiC devices? Puttock: SiC devices are increasingly favored for their superior energy efficiency and reduced environmental impact. However, the SiC manufacturing process presents challenges due to its high-temperature operations, which consumes significant amounts of energy and shortens the lifespan of chamber components. To address this, improving efficiency in these processes will be crucial in the coming years.Recycling is another important challenge. For example, CMP slurries present an opportunity for water recycling and conservation. At Entegris, we are committed to this issue and are actively collaborating with key industry players to enhance material circularity and prioritize sustainability in our new product development.SEMI: How is Entegris contributing to advancements in SiC technology, and what initiatives or partnerships do you have planned for the near future? Puttock: Entegris is an active member of the SEMI Global Automotive Advisory Council (GAAC) and participates in a working group focused on SiC with key industry leaders such as Volkswagen, BMW, Porsche Consulting, onsemi, Infineon, STMicroelectronics, and others. Our engagement spans the entire semiconductor supply chain, collaborating with integrated device manufacturers and original equipment manufacturers in fabs worldwide. Additionally, we recently announced our latest long-term agreement with onsemi, which underscores our commitment to advancing SiC technology.SEMI: What are your expectations regarding your participation at SEMICON Europa? Puttock: SEMICON Europa is a unique platform to connect with the semiconductor and automotive ecosystems. Last year, we organized a highly successful SiC session in collaboration with SEMI at both SEMICON West and SEMICON Europa, focusing on “Connecting the Automotive Ecosystem Towards More Mature SiC Manufacturing.”This year, we will continue the discussion with industry leaders during our session, “Cultivating a Thriving SiC Market: Tackling Key Challenges Across the Value Chain.” Our goal is to provide insights and propose solutions that will enable SiC power chips to achieve their anticipated role in future technology ecosystems.We will present alongside Porsche Consulting, and the talks will be followed by a panel discussion that will explore the current state and future prospects of SiC technology in power electronics. We invite visitors to join us at the Executive Forum on Thursday, November 14, from 1:40 – 3:00 p.m. and to visit us at Silicon Saxony booth 219 in Hall C1.About Mark PuttockMark Puttock, Ph.D., is the senior director of advanced technology engagements in the office of the CTO at Entegris. He has worked in the semiconductor industry for over 30 years with a background in physics and plasma processing. As a team member of the Entegris CTO office since 2014, Mark has followed technology trends and collaborated with Entegris’ global product development teams to develop timely and differentiated new materials, chemistries, and components for all the world’s semiconductor manufacturers. Maria Daniela Perez is Communications Manager at SEMI Europe.

Electric mobility, renewable energy and other technology innovations like IoT, 5G, smart manufacturing and robotics all require reliability, efficiency, and compact power systems, fueling the adoption of Silicon Carbide (SiC) and Gallium Nitride (GaN) to support lower voltages in significantly smaller devices. But chip designers must overcome the technological and economical challenges of integrating the two semiconductor materials into power systems.SEMI spoke with Elisabeth Brandl, Business Development Manager at EV Group about trends and new developments within the power electronics industry and the devices' application in smart mobility. Brandl shared her views ahead of her presentation at the SEMI SMART Mobility Forum, 18 February, as part of the SEMI Technology Unites Global Summit, 15-19 February 2021, online event. Join us to meet experts from EV Group and other key industry influencers. Registration is open. SEMI: What is driving new developments in power electronics?Brandl: Globally there are significant changes in infrastructure requirements for communication, automotive and power conversion. We need to look no further than the rising adoption of 5G, electric and hybrid vehicles, and renewable energy as examples of drivers of these changes. The device level, particularly in the field of power electronics, figures prominently in these shifts.The power electronics industry faces a growing number of scenarios where conventional silicon power devices are no longer suitable and are easily outperformed by new architectures mainly based on wide bandgap semiconductor materials like Silicon Carbide (SiC) and Gallium Nitride (GaN).SEMI: What industry challenges is power electronics innovation aiming to solve? Brandl: Power conversion efficiency is very important and needs further improvement as the related losses significantly contribute to the overall power consumption. For green power and a better environmental footprint, renewable energy is crucial, but so is overall power-consumption efficiency, yet the role of power devices is often underestimated. High-frequency and high-power applications, such as data center applications and inverters for renewable energy, where silicon power electronics are reaching their limits, are also important areas in power electronics.SEMI: How will the transition from silicon to compound semiconductor materials help?Brandl: The superior material properties of several compound semiconductors can tackle the need for lower losses in power conversion or better high-frequency behavior. Today, we mainly talk about GaN and SiC power devices as they are materials well-suited to address these needs. However, other materials like diamond and gallium oxide are in development for these applications. Material properties of SiC that enable thinner materials with lower power losses and better thermal behavior address power conversion efficiency as well as form factor challenges. GaN, especially in a high electron mobility transistor (HEMT), can be used for high-frequency applications.SEMI: What enables a better and more cost-effective manufacturability of SiC and GaN power devices?Brandl: For the end customer, a typical figure of merit regarding the cost effectiveness is $ per Ampere or Watt. While this seems simple, the reality is of course more complex. It is important to understand the main cost contributors within the manufacturing area. For SiC, this is clearly the substrate cost. In my presentation, I will show a way to reduce this cost via wafer bonding. For GaN, epitaxy – a method for growing or depositing mono crystalline films on a substrate – is the critical parameter. And of course, yield has a very big impact on cost effectiveness too, which means that good process control including metrology is very important.SEMI: Many semiconductor companies are already transitioning to silicon carbide and gallium nitride. Can you give us an example of a success story?Brandl: All the big power device manufacturers have either acquired or developed their SiC and/or GaN power device technology, so they also see a bright future for these wide bandgap semiconductors in the power device market. The most prominent success story is STMicroelectronics with its SiC MOSFET power devices, which have been implemented by Tesla in its Model 3 vehicles since 2018.SEMI: What is coming next?Brandl: New materials for power devices are being explored, such as diamond and gallium oxide. For SiC, the trend is moving toward 8-inch substrates, which is the focus of the funded EU project REACTION under the coordination of STMicroelectronics. Cost reduction and substrate availability also play a big role. All major power device manufacturers have contracts to secure the supply chain for SiC substrates because material availability is the main uncertainty at this time. Finally, collaborations along the supply chain are crucial and generally beneficial for all parties, as development requirements are better communicated and prioritized.Elisabeth Brandl is Business Development Manager at EV Group. She received her master in technical physics from the Johannes Kepler University Linz, Austria in Semiconductor and Solid State Physics. Since 2014, she has been responsible for Product Marketing Management for temporary bonding and compound semiconductors at EVG. The SMART Mobility Forum is the digital platform of SEMI Europe’s Global Automotive Advisory Council (GAAC) for industry stakeholders along the automotive and electronics value chains, from Design, Semiconductor Equipment and Materials Suppliers to Automotive OEMs.Smart Mobility is one of four SEMI initiatives focused on building communities, content, and activities around critical and emerging electronics markets. Read more about our Regional Chapters.Serena Brischetto is senior manager of Marketing and Communications at SEMI Europe.