New Silicon Carbide Test Method Task Force Formed
By Kevin Nguyen, SEMI
Threading screw dislocations (TSDs) are detrimental to the yield and the performance silicon carbide base devices. Thus, there is a need to specify the TSD density of a substrate material (or an epi-layer) sold to a customer using these for device fabrication, based on a non-destructive measurement technique.
Led by Christian Kranert (Fraunhofer), the Full-Wafer TSD Density Mapping of 4H-SiC Task Force (TF) was formed at the Europe Compound Semiconductor Materials TC Chapter Meeting held on January 28, 2021. The goal is to develop SEMI Draft Document 6717, Test Method for Quantifying TSDs in 4H-SiC Crystals.
By using a standardized and reliable test method, the appropriate quality of the substrate material can be chosen, which may either reduce costs if the requirements regarding TSD density is low, or may increase the yield if the supplied substrates (or epi-layers) are sufficiently high quality.
X-ray topography will be used as a test method, but different approaches or measurement parameters may yield varying results. Thus, the measurement and evaluation parameters need to be defined to obtain comparable results.
This document will also specify the method for detection as well as defining measurement procedures and quantification of TSDs in 4H-SiC materials.
Silicon carbide end users and suppliers including Global Wafers, Infineon, ST Microelectronic, Northrop Grumman, and SiCrystal have joined in this effort. The TF will have its kickoff meeting via teleconference soon.
If you would like to participate in this TF, contact Kevin Nguyen at [email protected] or if you have any standards-related question, please contact your regional staff.
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SEMI
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March 11, 2021