China Compound Semiconductor Materials Technical Committee Chapter Highlights

By Isadora Jin, SEMI China

Two new task forces, SiC Epitaxial Wafer Task Force and SiC Substrate Task Force, were formed at the Compound Semiconductor Materials China TC Chapter Fall Meeting.

The SiC Epitaxial Wafer Task Force was formed to establish a uniform standard for 4H-SiC homo-epitaxial wafers. Currently under development, Document 6693, New Standard: Specification for 4H-SiC Homo-Epitaxial Wafer. The Task Force is led by Dr. Gan Feng (Epiworld, 4H-SiC epitaxial manufacturer), whose members come from the representative enterprises in the whole industry chain of 4H-SiC, including the substrate, epitaxy and device.

The main activities of the task force are focused on developing the standards of 4H-SiC homoepitaxial wafers for power devices, which will address the basic standardization document for technologically material parameters of 4H-SiC homo-epitaxial wafer firstly. This master document will serve as a framework for subsequent specific standards. Other specific standardization issues shall be addressed and completed as required by concurrent technological development.

The SiC Substrate Task Force is chartered to investigate and develop specifications for silicon carbide substrates, especially for p-type conductive substrates. In terms of the test method standards, the TF will work on developing standards for micropipes, dislocations, stacking faults and other volume parameters; surface defects, metal contamination and other surface quality parameters.

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December 3, 2020