Use of Silicon-Based Additives and Their Mechanistic Role in Enhancing the Selectivity of Wet Etching Process on Sige over Si/Sio
ABSTRACT
Selective etching is a critical enabler for nascent advanced architectures such as forksheet and complementary FETs, where multiple high-aspect-ratio horizontally stacked nanosheets are formed from isotropic lateral etch. Despite the ease of use and certain intrinsic chemical selectivity of etchant solutions, the nanosheet architectures demand a much higher selectivity that requires advanced additives in wet etching. Here we report the use of silicon-based additives and their mechanistic role in enhancing the selectivity of wet etching process on SiGe/Si/SiO.
BIOGRAPHY
Long tenured employee of Evonik who has served in various commercial capacities. Presently the primary customer facing contact for Evonik's semiconductor and CMP market segments.