Dummy Gate Poly Wet Etch Studies in GAA Nanosheet Flow
ABSTRACT
Dummy gate polysilicon wet etch clean studies were conducted in the advanced nanosheet based gate all around (GAA) process flow. The study for wet etching rate and selectivity on films used in the process flow was conducted and possible implications were discussed. Drastic reduction on buried void (BV) defectivity in the polypull process was observed through process limiting yield (PLY) analysis and top-down Scanning Electron Microscopy (SEM) inspection.
BIOGRAPHY
Dr. Alma Margarita Vela Ramirez received her PhD in Chemical Engineering from Iowa State University in 2022, where her work focused on the design, fabrication and optical characterization of metallic nanostructured surfaces. Alma is a wet process engineer from IBM Research with 3.5 years of experience on semiconductor research on wet etching and wet cleaning processes. Her current work focuses on the front-end of the line research, particularly on the 2nm Gate All Around (GAA) nanosheet process.