downloadGroupGroupnoun_press release_995423_000000 copyGroupnoun_Feed_96767_000000Group 19noun_pictures_1817522_000000Member company iconResource item iconStore item iconGroup 19Group 19noun_Photo_2085192_000000 Copynoun_presentation_2096081_000000Group 19Group Copy 7noun_webinar_692730_000000Path
Skip to main content

BIOGRAPHY

Fabrice Nemouchi, PhD, CEA-LETIFabrice Nemouchi received a PhD degree in Materials Science from Paul Cézanne University 
(Marseille), France, in 2005. He deals with the growth and kinetics mechanism of mainly Ni-silicides 
and Ni-germanides. Then, he joined the CEA, LETI in 2006 as a fellow research engineer to develop 
contacts on both Si and Ge (silicidation and germanidation) for FDSOI technology in 200 mm in the 
frame bilateral project with STMicroelectronics.

In 2008, he was hired by the CEA, LETI to work on Cu metal CMP processes and low k damage 
limitation for C45 and C28 nodes. From 2011 to 2017, he led the LETI Contact Team in order to 
develop semi-conductor metallization on several technologies: Nanoelectronics (FDSOI 28, FDSOI 
22) with STMicroelectronics and GlobalFoundries, photonics (III-V metallization with CMOS 
compatible process and material), and superconducting contacts for Qbit applications. After one year 
spent as a CEA-LETI assignee in GlobalFoundries Dresden working on 12FDSOI technology 
development (integration of MOL/BEOL), he took charge of the MOL and BEOL integration 
activity at CEA-LETI for various applications. In 2020, he was in charge of the laboratory of 
process integration and pre-industrialization supporting internal projects, start-ups, and industrial 
company development. Finally, he became in 2023 Manager of clean-room methods and logistics,
process integration, and pre-industrialization section.

Since 2011, he has been supervising 6 PhD students, 4 Post-doctorates, and over 10 master students. He 
wrote over 130 papers and communications, holds 30 patents, and is still active in advanced 
contact and BEOL for FDSOI and superconducting Qbits.