downloadGroupGroupnoun_press release_995423_000000 copyGroupnoun_Feed_96767_000000Group 19noun_pictures_1817522_000000Member company iconResource item iconStore item iconGroup 19Group 19noun_Photo_2085192_000000 Copynoun_presentation_2096081_000000Group 19Group Copy 7noun_webinar_692730_000000Path

This collection contains presentations by Andrew Peng, Deputy to VP of Business Development at Tongfu Microelectronics Co., Ltd., E. Jan Vardaman, President and Founder of TechSearch International, Zhiqiang Su, Director of Strategic Marketing at GigaDevice Semiconductor, and Mustafa M. Pinarbasi, Ph.D., of Spin Transfer Technologies, which were given during SEMICON China 2018 Memory conference in March in Shanghai, China.

“Global Standards for the Microelectronics Industry – Global IC Market Updates” suggests that the fast-growing data economy is creating tremendous demand for memory devices for data processing and storage, and that memory cycles have become shorter. The end objective of China’s memory manufacturing initiative may not be a business advantage but rather state power as the country looks to reduce its dependence on exports for its semiconductor needs. Despite aggressive M&A activity in recent years, China has yet to reach the most advanced levels of technology in the semiconductor industry. Other challenges face China as well.

“Memory Packaging Trends – An Era of Change” shows a shift in memory packaging and interconnects, and the future high-density FO-WLPs. Today’s high performance DRAM stacks with TSV; higher bandwidth, lower latency, lower power consumption are also expected. Example products from AMD, Xilinx, Intel, Samsung, Toshiba, and Micron show these trends. Assembly challenges, flash demand, and transition DRAM packaging are also covered.

“Specialty Memory Market – Build Up Eco-system to Keep Growing” discusses the big data era and the growth of the Memory Industry, which is dominated by DRAM and NAND (95%). Specifically, the specialty memory market is considered, both its current size and growth potential, and compared to main stream memory solutions. Charts and graphs are shown. Investment and co-development is recommended.

“Unleashing MRAM as Persistent Memory” discusses challenges with the memory hierarchy, such as inefficient scaling, current leakage, power dissipation, and cost. Magnetic RAM (MRAM)’s function and processing technology is explained and benefits listed, as well as where it sits in development presently; stochastic behavior has limited MRAM to embedded NV. Spin Transfer torque efficiency with patented pMTJ structure enhancement could be the solution. Physics of the engine are explained, and how magnetics can be combined with CMOS.

 

Keywords: Memory, Packaging, Trends, DRAM, NAND, China, 3D NAND, Interconnects, FO-WLP, TSV, Investment, CMOS