Dr. Gambino received the B.S. degree in materials science from Cornell University, Ithaca, NY, in 1979, and the PhD degree in materials science from the Massachusetts Institute of Technology, Cambridge, MA, in 1984.
He joined IBM, Hopewell Junction, NY, in 1984, where he worked on silicide processes for Bipolar and CMOS devices. In 1992, he joined the DRAM development alliance at IBM's Advanced Semiconductor Technology Center, Hopewell Junction, NY. While there, he developed contact and interconnect processes for 0.25-, 0.175-, and 0.15-um DRAM products. In 1999, he joined IBM's manufacturing organization in Essex Junction, VT, where he worked on copper interconnects, CMOS image sensors, RF devices, and 3D integration.
He joined ON Semiconductor, Gresham, OR, in 2015. He is currently working on CMOS image sensors and high voltage semiconductors. He has published over 200 technical papers and holds over 500 patents.