BIOGRAPHY
Dr. Sangjin Hyun is Corporate Executive Vice President and Head of the Advanced Process Development Team at the Semiconductor R&D Center, Samsung Electronics. In this capacity, he leads the strategic development of next-generation semiconductor technologies, overseeing a comprehensive portfolio that includes advanced processes for 3D devices, innovative memory architectures, cutting-edge packaging solutions, and high-precision metrology systems.
Since joining Samsung Electronics in 2001, Dr. Hyun has spent over 25 years driving the company's technological evolution across multiple domains. He has extensive experience leading process development for both DRAM and Logic devices, where he managed the implementation of critical technologies such as gate oxide for DRAM, high-k metal gate, FinFET architectures, and low-resistive contact solutions.
Furthermore, Dr. Hyun has played a key role in expanding Samsung's capabilities in advanced packaging. He has led the development of next-generation transistor structures, including Gate-All-Around, and led the development of advanced packaging technologies such as hybrid Cu bonding. His leadership in these areas has been essential in optimizing device performance and scalability for the AI era.
Dr. Hyun has authored or co-authored more than 200 journal publications, conference papers, and patents, reflecting his consistent contribution to the field of semiconductor physics and manufacturing. He holds a B.S., M.S., and Ph.D. in Condensed Matter Physics from Seoul National University, providing the academic foundation for his technical leadership in the industry.