Use of Silicon-Based Additives and Their Mechanistic Role in Enhancing the Selectivity of Wet Etching Process on Sige over Si/Sio
ABSTACT
Selective etching is a critical enabler for nascent advanced architectures such as forksheet and complementary FETs, where multiple high-aspect-ratio horizontally stacked nanosheets are formed from isotropic lateral etch. Despite the ease of use and certain intrinsic chemical selectivity of etchant solutions, the nanosheet architectures demand a much higher selectivity that requires advanced additives in wet etching. Here we report the use of silicon-based additives and their mechanistic role in enhancing the selectivity of wet etching process on SiGe/Si/SiO.
BIOGRAPHY
Dr. Tim Lau obtained his PhD in Inorganic Chemistry from the University of Chicago. After postdocs at Argonne National Lab and Northwestern University, he joined Evonik Corporation in 2020 serving the segment of semiconductors.