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November 24, 2026

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13:15 – 13:30  Registration
13:30 – 14:00  Welcome & Call to Order
14:00 – 14:15  Review and Approval of Previous Meeting Minutes 
14:15 – 14:30  SEMI Staff Report
14:30 – 15:00  Liaison Reports
15:00 – 15:20  Task Forces Reports

                        Silicon Carbide Substrate Task Force

                        GaN Task Force

                        SiC Epitaxial Wafer Task Force

15:20 – 15:40  Ballot Application

                       #7407 Test method for determining net carrier density profiles in silicon carbide epitaxial wafers by capacitance-voltage measurements with a mercury probe

                       #7408 Specification For Bonding Silicon Carbide Homoepitaxial Wafer

15:40 – 16:00  New SNARF Application

                        Test method for Geometry of Silicon Carbide Wafers by single side oblique incident Interferometer
16:00 – 16:20  New TF Application

                        Ga2O3 Task Force

16:20 – 16:25  Next Meeting Date & Locale
16:25 – 16:35  Group Photo
16:35 – 17:00  Core Member Application and Renew
 

Registration link:
If you plan to attend the meeting, please make sure to submit the form below by Thursday November 19, 2026.
https://forms.cloud.microsoft/r/YrRXGWPLwm

 

Microsoft Teams:

Join on your computer or mobile app

https://teams.microsoft.com/meet/249559340258784?p=FM4QnjiQHUz12oqPSl
Meeting ID: 249 559 340 258 784
Passcode: Qn6b2cf9
Time

1:30 pm - 5:00 pm CST

Add to Calendar 2026-11-24 13:30:00 2026-11-24 17:00:00 SEMI Standards Compound Semiconductor Materials China TC Chapter Fall Meeting 2026 13:15 – 13:30  Registration13:30 – 14:00  Welcome & Call to Order14:00 – 14:15  Review and Approval of Previous Meeting Minutes 14:15 – 14:30  SEMI Staff Report14:30 – 15:00  Liaison Reports15:00 – 15:20  Task Forces Reports                        Silicon Carbide Substrate Task Force                        GaN Task Force                        SiC Epitaxial Wafer Task Force15:20 – 15:40  Ballot Application                       #7407 Test method for determining net carrier density profiles in silicon carbide epitaxial wafers by capacitance-voltage measurements with a mercury probe                       #7408 Specification For Bonding Silicon Carbide Homoepitaxial Wafer15:40 – 16:00  New SNARF Application                        Test method for Geometry of Silicon Carbide Wafers by single side oblique incident Interferometer16:00 – 16:20  New TF Application                        Ga2O3 Task Force16:20 – 16:25  Next Meeting Date & Locale16:25 – 16:35  Group Photo16:35 – 17:00  Core Member Application and Renew Registration link:If you plan to attend the meeting, please make sure to submit the form below by Thursday November 19, 2026.https://forms.cloud.microsoft/r/YrRXGWPLwm Microsoft Teams:Join on your computer or mobile apphttps://teams.microsoft.com/meet/249559340258784?p=FM4QnjiQHUz12oqPSlMeeting ID: 249 559 340 258 784Passcode: Qn6b2cf9 China SEMI.org [email protected] Asia/Shanghai public
Location

China

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