Selective Si Etching with Fluorine and Additive Compositions
ABSTRACT
Selective etching of silicon will be required for fabrication of SiGe channels in pFET of future GAA architectures. In this report, we present results of experiments performed on the Linde Etch Test Stand for thermal etching of silicon layers in a Si/SiGe stack with fluorine gas and additive compositions. Combination of fluorine, additive compounds, and etching process parameters produced a residue-free, square profile of horizontal SiGe structures.
BIOGRAPHY
Oleg Byl leads Linde’s Electronics R&D team focusing on development and commercialization of new materials semiconductor industry. Prior to joining Linde in 2022, he worked at Entegris in various R&D roles developing electronics gases and their delivery packages. He is a co-inventor on 33 granted patents and co-authored over 30 peer reviewed papers and presentations.
Oleg hold a Ph.D. degree in physical chemistry from the University of Pittsburgh.