Isotropic Dry Cleaning Technologies Using Gases and Radical
ABSTRACT
For manufacturing high-performance and low-power next-generation logic devices, a structural innovation was suggested. In order to introduce the 3-Dimensional structure, it was necessary to develop new patterning technologies. The answer was novel etching process which was damage-free, selective, and non-directional. This isotropic etching technique was defined as “Dry Cleaning”, and only gases and radicals are used as the main etching species. In particular, not using Ion is the biggest difference from dry etching. In this presentation, we will focus on explaining the gas reaction for etching oxide and the radical reaction for etching the conductor.
First, self-limited reactions that form by-products are widely used for patterning oxide films. The fin structure was implemented by adjusting the etching speed and profile of the oxide with a combination of temperature, ratio, and pressure. It is steadily used in the latest devices.
Second, in the etching of the Si and SiGe series, fluorine radicals (F*) are mainly used among halogen radicals. However, the high reactivity of the F* affects the exposed films and optional techniques are needed to control it. Additional gases cause competitive and non-competitive reactions with F*, enabling conductor etching in various stacks.
BIOGRAPHY
Kibyung Park has worked in Semiconductor R&D at Samsung Electronics since 2009. Most recently, he was in the Samsung-IBM Pathfinding Program at Albany, NY in 2024. He holds a Master's degree in chemical engineering from Yonsei University.