Seongjun Park, Ph.D. is Executive Vice President at Samsung Electronics. He is leading Material Development Team in Semiconductor Research and Development Center, which develops materials for semiconductor fab processes including photoresists, precursors, etchants and cleaning chemicals, CMP chemicals, etch gases, wafers and CIS color filters. His main interest is material development to improve the properties and the processes of semiconductor devices.
He received B.S. degree in Chemical Engineering from Seoul National University (1994) and received Ph.D. from Stanford University (2003) where he spent additional two years as a research associate. Dr. Park joined Intel in 2005 where he investigated high-k/low-k materials, metals for gate electrode, low contact resistant material for S/D and low resistance metals for interconnect based on quantum mechanical simulations. He's been with Samsung since 2010. Since he joined Samsung, he led various projects including touch sensor, sound sensor, neuromorphic process and quantum computing. He also led material development projects including new materials for DRAM Capacitor, VAND tunnelling barrier, PRAM GST and OTS, MRAM magnetic tunnel barrier, RRAM, ferroelectric materials for Negative Capacitance FET, ultra-low k material and Graphene and 2D materials. He also investigated materials for display applications including quantum dots and Nano LED.