ST Silicon Carbide Technologies For Higher Power System Efficiency
ABSTRACT
With more than 30 years' experience in power semiconductors and 25 years of SiC development, ST today offers a leading range of discrete and module solutions based on state-of-the-art planar SiC MOSFET technology to service and support a significantly growing market.
SiC is central to ST developments focused on improving power system efficiency and sustainability in general, and the company has embarked on a comprehensive vertical integration and capacity expansion program to ensure the necessary volumes and reliability to satisfy current and future electrification trends in automotive and industrial sectors.
BIOGRAPHY
Simone Rascunà has been working in Research & Development at STMicroelectronics for High Power Devices since 2002. He has extensive experience in developing Silicon super-junction MOSFETs technologies and shifted his focus to compound semiconductors for High Power Applications in 2010. As an Advanced Research Senior Manager, he leads the design and development group for Silicon Carbide Diodes and has numerous patents in the field of SiC devices, including the fifth generation of the MDmesh super-junction technology.