Dr. Peter Sandow earned his Ph.D. at Pennsylvania State University in Electrical Engineering - Device Physics and Material Characterization, Thesis on Deep Levels in Silicon. His MSEE and BSEE degrees were obstained at Syracuse University.
Dr. Sandow has been responsible for device development, sales, engineering and applications of silicon subtrates for ICs and MEMS devices. He’s worked for various semiconductor companies such as MEMC, GE, IBIS and others. He has an extensive background in defect analysis, sales and applications of SIO, Bulk Si wafers, MEMS , crystal growth and thin film epitaxy.
He also has MEMS Sales experience at Midwest Microdevices and Micralyne. Device engineering experience at General Electric Semiconductor Division. Silicon Sales, defect analysis and Applications experience at MEMC, Mitsubishi-America, LG Siltron, Okmetic, and Icemos.
Overall, Dr. Sandow has been IBIS in engineering and executive roles since 1980. Lastly, he’s led the introduction of thick and thin SOI and Epitaxial products to the US market.