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Session 15AM 3: Novel Metrology Techniques

Chairs: Franz Heider, Infineon Technologies Austria; Jay Mody, GLOBALFOUNDRIES; Brett Williams, ON Semiconductor

This session contains presentations from a variety of techniques, applied in novel ways to provide important information for process and quality improvements. These techniques include X-Ray scattering, photoluminescence and reflectometry.    


15.1 Dimensional Control of line Gratings by Small Angle X-ray Scattering : Shape and Roughness Extraction

Jérôme Reche, Patrice Gergaud, Tra Nguyen-Thanh, Yoann Blancquaert, University Grenoble Alpes, CEA, LETI, Maxime Besacier, University Grenoble Alpes, Guillaume Freychet, NSLS II, Brookhaven


15.2 Advanced Wafer Backside Bevel Characterization Using Geometry Measurement System

André Striegler, Thomas Lindner, GLOBALFOUNDRIES Module One LLC & Co. KG, Dresden, Germany Florian Flach, Priyank Jain, Madhan Kanniyappan, KLA


15.3 Investigation of Photoluminescence Voltage PL-V Measurement: Correlation to Capacitance Voltage C-V for Si/dielectric Interface Characterization

T. Nassiet, J. M. Bluet, G. Bremond, Université de Lyon; R. Duru, D. Le Cunff, 1 STMicroelectronics (Student)


15.4 Ultra Large Pitch and Depth Structures Metrology Using Spectral Reflectometry in Combination with RCWA Based Model and TLM Algorithm

Annalisa Del Vito, ST Microelectronics; Ilya Osherov, Adam Michal Urbanowicz, Yinon Katz, Kobi Barkan, Igor Turovets, Ronny Haupt, NOVA

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