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Session 15AM 3: Novel Metrology Techniques

Chairs: Franz Heider, Infineon Technologies Austria; Jay Mody, GLOBALFOUNDRIES; Brett Williams, ON Semiconductor

This session contains presentations from a variety of techniques, applied in novel ways to provide important information for process and quality improvements. These techniques include X-Ray scattering, photoluminescence and reflectometry.    
    
                                                         

10:00am

15.1 Dimensional Control of line Gratings by Small Angle X-ray Scattering : Shape and Roughness Extraction

Jérôme Reche, Patrice Gergaud, Tra Nguyen-Thanh, Yoann Blancquaert, University Grenoble Alpes, CEA, LETI, Maxime Besacier, University Grenoble Alpes, Guillaume Freychet, NSLS II, Brookhaven
 

10:25

15.2 Advanced Wafer Backside Bevel Characterization Using Geometry Measurement System

André Striegler, Thomas Lindner, GLOBALFOUNDRIES Module One LLC & Co. KG, Dresden, Germany Florian Flach, Priyank Jain, Madhan Kanniyappan, KLA
 

10:50

15.3 Investigation of Photoluminescence Voltage PL-V Measurement: Correlation to Capacitance Voltage C-V for Si/dielectric Interface Characterization

T. Nassiet, J. M. Bluet, G. Bremond, Université de Lyon; R. Duru, D. Le Cunff, 1 STMicroelectronics (Student)
 

11:15

15.4 Ultra Large Pitch and Depth Structures Metrology Using Spectral Reflectometry in Combination with RCWA Based Model and TLM Algorithm

Annalisa Del Vito, ST Microelectronics; Ilya Osherov, Adam Michal Urbanowicz, Yinon Katz, Kobi Barkan, Igor Turovets, Ronny Haupt, NOVA


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