downloadGroupGroupnoun_press release_995423_000000 copyGroupnoun_Feed_96767_000000Group 19noun_pictures_1817522_000000Member company iconResource item iconStore item iconGroup 19Group 19noun_Photo_2085192_000000 Copynoun_presentation_2096081_000000Group 19Group Copy 7noun_webinar_692730_000000Path
Skip to main content

Session 13

Advanced Equipment Processes and Materials 2: Advanced Structures

Session Co-Chairs: Henan Zhang, Leonard Rubin

Advanced Structures, GAA and Vertical Transistors

Wednesday, May 15, 2024

1:30PM ET
 

13.1 Withdrawn

13.2 Development of Epitaxial SiGeb as a Test Vehicle to Evaluate Source-Drain Etchout During Channel Release of Gate-All-Around Devices
M. Nasseri, IBM Research

13.3 SCCO2 Drying for Preventing Pattern Collapse in Advanced Logic Device Structures
M. Sankarapandian, W. Lo, A. V. Ramirez, N. Flores, X. Liu, IBM Research; R. Yamanaka, S. Inoue, S. Shimomura, K. Iwanaga, Tokyo Electron 

13.4 Lithography WEE, EBR and Pre-SiGe HF Clean Flow Rate Optimization for Wafer Edge Defectivity Improvement 
 J. Chow, D. Adukkadukkam, S. E. Choon, D. Ong, S. T. Kiat, GlobalFoundries

 

Return to ASMC