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Session 3—Advanced Metrology

Co-Chairs: Felix Levitov, Applied Materials | Jay Mody, GlobalFoundries | Franz Heider, Infineon | Janay Camp, KLA | Ronny Haupt, NOVA Process Insight | Delphine LeCunff, ST Microelectronics

This session will focus on novel metrology techniques to characterize EUV resist, overlay structures, doping levels, and process-related properties.  

Techniques that are incorporated in this session are CD-SEM, Scatterometry, Machine Learning, FTIR, Optoacoustic Method, and Photoluminescence. 

3.1 Image-Based CD-SEM tool Real-Time Monitoring | Zheng Zou, Sengkeat Lim, GlobalFoundries 
3.2 Advanced EUV Resist Characterization using Scatterometry and Machine Learning | Daniel Schmidt, schmidt@ibm.com, Karen Petrillo, Mary Breton, Jennifer Fullam, IBM; Roy Koret, Igor Turovets, Aron Cepler, Nova Measuring Instruments
3.3 Multiple layers’ effects on OCD measurement | Zhu Bin, Zou Zheng, Zhang Jian, Murawala Aditya, Soo Chen Lim, Stanley Wong, GlobalFoundries 
3.4 Room Temperature Micro-Photoluminescence Measurements for Monitoring Defects in Low-Energy High-Dose As and B Implanted Silicon | Zsolt Zolnai, Ferenc Korsós, Anita Pongrácz, Victor Samu, Zoltán Kiss, Bálint Fodor, János Szívós, John Byrnes, Semilab; Leonard Rubin, Edward Moore, Axcelis
3.5 AI solution in Metro Recipe Automation | Congshu Zhou, Zheng Zou, Fang Li, Sengkeat Lim, Jason Khaw, Summer Boo, Heinmun Lam, GlobalFoundries 
3.6 Lattice Scale Inspection of Semiconductor Interfaces Via Non-Destructive Camera-Less Terahertz 3D Imaging | Anis Rahman, Applied Research & Photonics
3.7 Imaging of Overlay and Alignment Markers Under Opaque Layers Using Picosecond Laser Acoustic Measurements | Manjusha Mehendale, A. Antonelli, Robin Mair, Priya Mukundha, Onto Innovation; Janusz Bogdanowicz, Anne-Laure Charley, Philippe Leray, Farrukh Yasin, David Crotti, IMEC

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