Dr. Ty McNutt

Dr. Ty McNutt currently serves as Senior Director of Power Packaging at Wolfspeed. He is responsible for research and development of packaged power products (discrete and module) across the broad array of applications and power levels Wolfspeed serves. He is an inventor on 14 issued patents on silicon carbide materials, devices, packaging, and applications. He has authored / co-authored over 80 publications on wide bandgap devices and has been working in the field of silicon carbide for over 25 years. He received his Ph.D. in Electrical Engineering from the University of Arkansas in SiC semiconductor device physics. 

Presentation Title
Application Driven SiC Power Products for Fast Growing Markets

Well-known voltage ratings have been traditionally defined by IGBT and MOSFET technologies in the silicon world, and in silicon carbide (SiC), have served as the first nodes of insertion. For the latest generation of SiC devices, voltage nodes have been developed to drive application specific efficiencies at the system level. Wolfspeed has leveraged decades of learning in device, packaging, and SiC systems designs to develop products >1700V. However, the Generation 4 technology driving these next generation systems needs packaging defined around SiC devices that enables the system to be cost-effective and scalable, while not giving away performance. The evolution of these products will be discussed, centering on the new 2.3kV voltage node and related applications.