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Session 4Advanced Equipment Processes and Materials

Chairs: Thirumalesh Bannuru, Applied Materials; Katie Lutker, TEL; Jean Wynne, IBM Research

This session focuses on the optimization of processes, techniques, and materials for advanced technology nodes extending from the current 14nm technology to 7nm and beyond.


4.1   Comparing PVD Titanium Nitride Film Properties and Their Effect on Beyond 7nm EUV Patterning

Scott DeVries, Ekmini Anuja De Silva, Donald Canaperi, Andrew Simon, Abraham Arceo de la Pena, Wei Wang, Joseph Maniscalco, Luciana Meli, Brock Mendoza, IBM Research


4.2   Quasi-atomic Layer Etching in the BEOL for Advanced Logic Nodes (7 nm and beyond)

Michael Edley, Katie Lutker-Lee, Xinghua Sun, Yen-Tien Lu, Angélique Raley, TEL Technology Center, America, LLC


4.3   Oval-Shaped OP-Layer Hole Etching: Shape Deformation, Local Arcing and Hole Bridging Improvements

Zusing Yang, Yao-Yuan Chang, Ming-Tsung Wu, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, and Chih-Yuan Lu, Macronix International Co.


4.4   PMOS SiGe Epitaxial Growth Process Improvement to Increase Yield and Throughput

Vikas Kaushal, Rakesh Mahadevapuram, Guozhen Yue, Arvind Raviswaran, Samsung Austin Semiconductor


4.5   Energy Density and Temperature Calibration for FEOL Nanosecond Laser Annealing

Yasir Sulehria, Oleg Gluschenkov, IBM Research; Michael Willemann, Shaoyin Chen, Thirumal Thanigaivelan, Veeco Instruments


Networking Break


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