Anthony Annunziata, MRAM Process and Integration, IBM TJ Watson Research Center
Anthony J. Annunziata is a Manager and Research Staff Member at IBM T. J. Watson Research Center in Yorktown Heights, NY. His research group focuses on novel process development and integration of STT-MRAM, thermally-assisted MRAM, and other novel magnetic memory technology with CMOS-compatible processes. His group’s work spans the space from device and materials physics studies to 200 mm, Mb-scale product demonstrations. Before becoming manager, Anthony led first-demonstrations of embedded thermally-assisted MRAM and of magnetic nanowire “Racetrack” memory. Before IBM, Anthony was a graduate student in Applied Physics and National Science Foundation Graduate Research Fellow at Yale University, and was an undergraduate at Colgate University.