Mukesh V. Khare
Distinguished Engineer, Director Albany NanoTech Research Center
Dr. Mukesh V. Khare is an IBM Distinguished Engineer and Director at IBM’s Albany NanoTech Research Center in New York, and is responsible for the semiconductor technology research for sub-10nm node. In his current role, he is leading IBM’s joint development alliance with top semiconductor companies to define next generation technology, generate silicon proof points and develop longer term pipeline of innovative elements.
Dr. Khare led the development and implementation of high-k metal gate technology starting from fundamental research to full implementation in 32nm technology node at IBM and development alliance member companies. He and his research team drove the development of three dimensional device structure called FinFET that delivers superior power performance benefit to IBM and its development alliance partners. The FinFET innovation under his leadership is being implemented at IBM’s 300mm Fishkill Fab for qualification and volume production. As a technical champion, he led engineering team through development and qualification of the 90nm SOI technology from basic definition to the transfer in manufacturing Fab.
Dr. Khare is a recipient of Corporate Award and Outstanding Technical Achievement Award at IBM towards his technical contribution and leadership. He is an officer and technical program committee member at the Symposia on VLSI Technology. He has authored and co-authored more than 80 research papers and holds several U.S. and international patents.
Dr. Khare received his M.S., M. Phil., and Ph.D. degrees in electrical engineering from Yale University and has been working at various engineering and executive positions at IBM since 1998.