New Task Force Approved at China HB-LED TC Chapter Fall Meeting 2016

New Task Force Approved at China HB-LED TC Chapter Fall Meeting 2016

The China HB-LED TC Chapter Fall Meeting 2016 was successfully held on October 14 at Friend Plaza Hotel Dandong. Committee co-chair Dr. Yong Ji, president and general manager of GHTOT, chaired the meeting and welcomed all attendees. Representatives of 100+ members from 50+ leading HB-LED companies including SANAN, GHTOT, AURORA, HC SEMITEK, ETI, Jingan, ECBO, NJC, DDXDF, INVENLUX, TDG, iStarwafer, HIT, etc. attended the meeting. Although currently the industry faces many challenges, experts believe this shows the significance of the SEMI standards for the industry.

 

The SEMI China HB-LED Standards TC Chapter was formed in early 2014, and has established 5 task forces as shown:

During the meeting, formation of a Patterned Sapphire Substrate task force was approved.

  • Background for Patterned Sapphire Substrate (PSS)

     Recently, the development of III-V nitride represented by GaN has significantly contributed to the solid-state lighting (SSL) development. Sapphire substrate is now widely used as substrate of III-V group nitride in LED. Due to the lattice mismatch and the difference in coefficient of thermal expansion between nitride and sapphire substrate, the sapphire substrate may impact luminous efficiency and lifetime of LED device. However, Patterned Sapphire Substrate(PSS)can effectively solve these problems, making it extensively used in manufacturing LED devices.

     However, with the development of technology in the field of LED and the rapid growth of this industry, the requirement for PSS on GaN-based LED devices is getting higher than before. During the epitaxial growth process, any change in the parameter of PSS may directly impact the reliability of LED devices. So far, every LED chip and PSS manufacturer has its own understanding of characteristics and definition, which has brought a lot of confusion to the LED device manufacturing process.

     Establishing a TF for Patterned Sapphire Substrate (PSS) can effectively boost the development of LED devices.

 

Theory for Patterned Sapphire Substrate (PSS)

Schematic diagram of LED device:

 

 

Light angle diagram of LED device:

Light angle diagram of LED device:

 
  

 

Light intensity diagram of LED device:

 
  

 

 

Process flow for PSS:

 

Classic example:

    
  
   
 

The below ballots were approved by the TC Chapter and will next undergo procedural review.

  • Doc. 5945, New Standard: Test Method for Determining Orientation of A Sapphire Single Crystal, initiated by AURORA;
  • Doc. 5723A, New Standard: Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers Discussion, initiated by GHTOT;
  • Doc. 5775A, New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Discussion, initiated by AURORA;

Additionally, the committee member discussed draft Doc.5776 and authorized it for balloting.

  • Doc. 5776, New Standard: Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED, initiated by HC SemiTek

SEMI HB-LED Standards meetings are held throughout the year in multiple regions – to get involved, register at www.semi.org/en/standardsmembership or contact your local SEMI Standards staff.

 

Standards Watch
SEMI
www.semi.org
Dec 1, 2016