Alan Shen - Direct-write fabrication of high-density interconnects

Session 22: Direct Write

Direct-write fabrication of high-density interconnects
Thursday, June 22, 2017 
10:15 AM - 10:40 AM

This presentation discusses direct write (DW) fabrication of interconnects on flexible substrates for wear sensor applications. The objective is to minimize the line-to-line spacing through process modeling and optimization of the printing parameters based on the n-Scrypt Tabletop 3Dn DW system. Several silver pastes containing high loading of silver particles were evaluated. The particle size distribution of the silver particles was measured using light scattering, while the exact silver loading was determined by thermogravimetric analysis (TGA). To model the DW process, the steady shear rheology of the silver pastes was characterized and the experimental data were subsequently fitted to a power-law fluid model. The volumetric flow rate of the silver pastes during DW was then simulated using a finite element method (COMSOL). Experimentally, silver lines with different cross-sectional areas were obtained, depending on the interplay between the volumetric flow rate, gap, and translation speed of the print nozzle.


Speaker's Biography

Alan Shen is a chemical engineering Ph.D. student at the University of Connecticut and a research assistant at United Technologies Research Center. Alan worked at Samsung Austin Semiconductor as a process engineer after receiving his dual bachelor degree in chemical engineering and mathematics at the University of Texas at Austin in 2011. His Ph.D. focus research area is process simulation and optimization of direct write printed electronic devices. Alan received an NSF scholarship in 2007, the Connecticut Space Grant graduate research fellowship in 2015, and an Anton Paar Research fellowship in 2016.


Alan Shen
United Technologies Research Center