High Brightness LED Pre-Standards Sessions at SEMICON West 2010


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HB-LED Pre-Standards Sessions at SEMICON West

Two informal sessions will be held at SEMICON West to discuss specific substrate and carrier requirements for high-brightness light-emitting diodes (HB-LEDs) and where they differ from the CMOS sector. By bringing interested parties across the sector together, these informal sessions aim to work towards some consensus that would enable equipment and materials suppliers to provide the industry with more cost effective tools with better yields.

The current SEMI M65 Standard for sapphire substrates covers only 2" and 3" wafers for CMOS applications, while the larger HB-LED wafers present more complex tradeoffs of thickness and cost versus yield. Wafer shipping and process carriers need to be suited to wafer size and sag. And with the more costly larger wafers and die, does it begin to make sense to mark the backside in some common way, like the 300mm silicon sector all does, for traceability to improve yields? What challenges will carrier wafers, now emerging for back-end processing, face in both automation and traceability?

Unique needs for HB LED substrates and traceability

Thursday, July 15
8:00am–10:00am

Requirements for wafer carriers, carrier wafers and traceability

Thursday, July 15
10:00am–12:00pm

Both HB-LED sessions will be held at the San Francisco Marriott Marquis, Pacific I.

For more information about the LED/Solid State Lighting events at SEMICON West, please visit the SEMICON West microsite. For more information about the Standards meetings and events taking place at SEMICON West, please visit the Standards West page.