SEMI Award for North America
Each year, SEMI publicly recognizes and honors technological and industrial leadership through the SEMI Award North America program. There are two distinctions for the Awards made within this program.
The awards program was established in 1979 to recognize enabling technical contributions by individuals and teams to the microelectronics industry. The enabling technological contributions to the microelectronics industry can be as broad as Integrated Circuit Design, Design for Manufacturability (DFM), new mask manufacturing methods, new device manufacturing architecture and methods and the assembly and test of integrated circuits and microelectromechanical (MEMS) devices.
In 2009, SEMI announced its first significant change by expanding criteria to include outstanding achievements in developing new and emerging technologies expected to have significant future value to the semiconductor industry. This change in criteria broadens the scope of the SEMI Award to recognize technology developments including semiconductors, photovoltaic solar displays and solid state lighting.
The highest honor achievable through the 2,000 member trade organization SEMI, is the Lifetime Achievement Award. The Honor is reserved for those individuals who repeatedly enable and lead the industry, technologically, throughout their professional career. See the following link "SEMI Award for North America recipients list"
Nominations for the Award are submitted by SEMI North America member companies.
Subsmission for nominations for the 2013 SEMI Award is now closed. North America Nomination form
Your nomination will be reviewed and selected by the SEMI Award for North America committee. Nominations for the 2013 SEMI Award for North America must be submitted by August 30, 2013 to be considered.
|2012 SEMI Award Recipients|
Congratulations to our 2012 SEMI Award Recipients presented the Intel team for their contribution to the first development, integration and introduction of a successful high-k dielectric and metal electrode gate stack for CMOS IC production, first implemented at the 45nm node in 2007.
Team members include:
*Formerly with Intel Corporation
Dr. Robert Chau accepting the SEMI Award on behalf of this team from
2013 SEMI Awards for North America Committee
|W. R. Bottoms (Chairman) |
Third Millennium Test Solutions
|Michael Current |
|Tom Di Stefano|
Garner Nanotechnology Solutions
|Joseph Monkowski |
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