SEMI Award for North America

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About the SEMI Award

Each year, SEMI publicly recognizes and honors technological and industrial leadership through the SEMI Award North America program. There are two distinctions for the Awards made within this program.

The awards program was established in 1979 to recognize enabling technical contributions by individuals and teams to the microelectronics industry. The enabling technological contributions to the microelectronics industry can be as broad as Integrated Circuit Design, Design for Manufacturability (DFM), new mask manufacturing methods, new device manufacturing architecture and methods and the assembly and test of integrated circuits and microelectromechanical (MEMS) devices.

In 2009, SEMI announced its first significant change by expanding criteria to include outstanding achievements in developing new and emerging technologies expected to have significant future value to the semiconductor industry. This change in criteria broadens the scope of the SEMI Award to recognize technology developments including semiconductors, photovoltaic solar displays and solid state lighting.

The highest honor achievable through the 2,000 member trade organization SEMI, is the Lifetime Achievement Award. The Honor is reserved for those individuals who repeatedly enable and lead the industry, technologically, throughout their professional career. See the following link "SEMI Award for North America recipients list"


Nominate

Nominations for the Award are submitted by SEMI North America member companies.

To submit a Nomination for 2013, please click 2013 SEM Award for North America Nomination form

Nomination Guidelines

Your nomination will be reviewed and selected by the SEMI Award for North America committee. Nominations for the 2013 SEMI Award for North America must be submitted by August 30, 2013 to be considered.

2012 SEMI Award Recipients

Congratulations to our 2012 SEMI Award Recipients presented the Intel team for their contribution to the first development, integration and introduction of a successful high-k dielectric and metal electrode gate stack for CMOS IC production, first implemented at the 45nm node in 2007.

Team members include:

  • Mark Bohr, senior fellow and director of Process Architecture and Integration, Logic Technology Development, Intel
  • Robert Chau, senior fellow and director of Transistor Research and Nanotechnology, Components Research, Intel
  • Suman Datta, professor, Electrical Engineering, Pennsylvania State University*
  • Mark Doczy, senior engineer in Advanced Transistor and Nanotechnology Group, Components Research, Intel
  • Brian Doyle, principal engineer in Advanced Transistor and Nanotechnology Group, Components Research, Intel
  • Tahir Ghani, fellow and director of Transistor Technology and Integration, Logic Technology Development,  Intel
  • Jack Kavalieros, principal engineer in Advanced Transistor and Nanotechnology Group, Components Research, Intel
  • Matthew Metz, senior engineer in Advanced Transistor and Nanotechnology Group, Components Research, Intel
  • Kaizad Mistry, vice president and director of Logic Technology Integration, Logic Technology Development, Intel

 *Formerly with Intel Corporation

Dr. Robert Chau accepting the SEMI Award on behalf of this team from
SEMI CEO Denny McGuirk and SEMI Awards Committee Chairman William Bottoms.

Press Release

SEMI Award for North America Recipients List

2012 SEMI Awards for North America Committee

W. R. Bottoms (Chairman)
Third Millennium Test Solutions

Terry Francis
Michael Current
Current Scientific
Joseph Monkowski
Pivotal Systems